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  • 1990-1994  (10)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Substrate temperature dependence of homoepitaxial growth of Si using mass selected ion beam deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4383-4389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxy of silicon at low temperature has been achieved using low-energy mass selected silicon ion beams. Reflection high-energy electron diffraction and Rutherford backscattering spectrometry have been utilized to assess the quality of silicon films deposited from 15 eV 28Si+ beams in the temperature range of 50–350 °C. Auger electron spectroscopy was used to monitor the contaminant levels on the surfaces. The films deposited at 350 °C are epitaxial and of a quality near that of the original substrate. The growth rate at 350 °C is ≈200 times faster than that for solid phase epitaxy. At 50 and 200 °C layer-by-layer epitaxial growth was inhibited and evidence for formation of three-dimensional islands in the early stage of growth followed by transition to an amorphous phase was observed. The transition to an amorphous phase occurred at lower film thickness (smaller ion dose) for lower temperatures. It is shown that small amounts of N+2 impurity in the 28Si+ beam, sufficient to add 1.4 at. % N to the silicon film, result in amorphous films, even at the highest temperature used, 350 °C. The effects of substrate temperature, contamination, and surface damage on the growth mechanism are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357328
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  • 2
    Electronic Resource
    Electronic Resource
    Enhancement of electrical activation of ion-implanted phosphorus in Si(100) through two-step thermal annealing (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1125-1127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an improvement of the electrical activation of 50 and 100 keV ion-implanted P in Si(100) by a two-step anneal process. The two-step process, which combines annealing for 30 min at 550 °C with annealing for 10 s at 1050 °C, activates nearly 75%–100% of the implanted P. A parallel study shows that one-step annealing for 10 s at 1050 °C only activates 40%–60% of the doped P. In the two-step process, the low-temperature anneal is for solid state regrowth of implantation-damaged Si, while the high-temperature anneal is for P activation. Our study demonstrates that, to enhance the electrical activation, it is important to separate the regrowth process from the activation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109801
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Practical adaptation in bulk superconducting magnetic bearing applications (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1893-1895 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lifting capacities greater than 41 N/cm2 (60 psi) at 77 K have been achieved using a combination of permanent magnets and high quality melt-textured YBa2Cu3O7−δ (YBCO). The key concept of this hybrid superconducting magnetic bearing (HSMB) is the use of strong magnetic repulsion and attraction from permanent magnets to support high loads in conjunction with flux pinning in a type II superconductor to counteract instabilities in a system consisting of magnets only. To illustrate this concept, radial and axial forces between magnet/superconductor, magnet/magnet, and magnet/superconductor/magnet, were measured and compared for the thrust and journal bearing configurations on a bearing prototype.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107145
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  • 4
    Electronic Resource
    Electronic Resource
    Low resistance ohmic contacts on nitrogen ion bombarded InP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2165-2167 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonalloyed Ti/Pt/Au contacts deposited in situ onto nitrogen ion bombarded n-type InP show contact resistivities as low as 3.4×10−6 Ω cm2. Acceleration voltages of 100–300 V and exposure times of 3–11 min were used to remove InP native oxide and produce a shallow (≤300 A(ring)) disordered donor layer on which ohmic contacts were deposited. Electron diffraction patterns matching those of polycrystalline InN were identified in this degenerately doped surface layer, which was further characterized by secondary ion mass spectrometry and ion channeling. Similar layers produced by Ar ion bombardment under the same conditions showed much higher contact resistivities (∼10−4 Ω cm2), indicating that the InN formation is beneficial for contact properties. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112750
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  • 5
    Electronic Resource
    Electronic Resource
    High-resolution transmission electron microscopy study of the radiation damage defects in high temperature superconductors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1968-1970 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution transmission electron microscopy (HREM) reveals that MeV heavy ions like Au generate radiation damage defects, a few nanometers in size, in surface regions (about 100 A(ring)) of the superconductors. Much larger defects have been found in the deeper regions of the superconductor sample, which is believed to be due to the larger damage cascade created by the slower ions after their electronic energy loss along the track. Monte Carlo simulation (trim) shows the same result in damage size as the HREM study. Light ions, like protons, generate mostly point defects, which are not visible to current electron microscopy. These point defects, although they can pin the flux, are not ideal for flux pinning, due to their small sizes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108332
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  • 6
    Electronic Resource
    Electronic Resource
    Linewidth dependence of critical current density in Y1Ba2Cu3O7 thin-film microbridges (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1129-1131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the dependence of the transport critical current density (Jc) on the width of Y1Ba2Cu3O7 thin-film microbridges with widths down to 2 μm has been made. No evidence of edge pinning, which leads to larger Jc's in narrower microbridges, was found. Due to the limitation in resolution of photolithography encountered in common usage, a tapered or radiation damaged edge was always present, which may have introduced a significant error in the cross section and hence in the estimation of Jc. By normalizing the critical current (Ic) to the room-temperature resistance of the microbridge, we can eliminate this mask-defined cross-sectional error.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106366
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of material processing in high temperature superconducting magnetic bearings (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2442-2444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the levitation forces related to superconducting bearing design was conducted on free-sintered and melt-textured Y1Ba2Cu3O7−δ(YBCO) materials. Comparisons were made between free sintered, variously oriented, and randomly oriented melt-textured materials. Magnetic force measurements were also conducted on oriented YBCO before and after neutron irradiation. A magnetic bearing of new design utilizing the phenomenon of flux pinning was then fabricated using melt-textured YBCO with permanent magnets and a speed of 135 000 rpm was achieved. Rotational dissipation and magnetic stiffness measurements were performed on the bearing prototype.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105989
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  • 8
    Electronic Resource
    Electronic Resource
    Formation of boron nitride and boron carbide composite by nitrogen implantation at elevated temperature (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1643-1645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron carbide (B4C) is a wear resistant material with hardness slightly less than that of diamond. It has an excellent strength to weight ratio and relatively high toughness under controlled processing. These essential mechanical properties make B4C an ideal candidate for cutting tool and bearing applications. We will demonstrate that hexagonal boron nitride (h-BN), a good solid lubricant, can be formed on B4C surfaces through high temperature (850 °C) nitrogen ion implantation. The formation of composite B4C and h-BN on the B4C surface can potentially reduce surface friction coefficients, making the material more attractive for tribological applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110722
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  • 9
    Electronic Resource
    Electronic Resource
    High energy carbon ions implantation: An attempt to grow diamond inside copper (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2650-2652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1 MeV carbon ions were implanted into single-crystal copper which was then annealed in argon at temperatures ranging from 350 to 750 °C. Regrowth of the radiation-damaged copper was examined by RBS-channeling measurements. Carbon segregation occurred on annealing at 750 °C. Prolonged annealing at 750 °C caused blistering of the copper layer over the buried carbon. After removal of the blistered copper overlayer, the previously buried carbon layer was examined by Raman scattering, showing that graphite is the dominant phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108097
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  • 10
    Electronic Resource
    Electronic Resource
    Transition between Ge segregation and trapping during high-pressure oxidation of GexSi1−x/Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4750-4755 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transition from Ge segregation to trapping during high-pressure oxidation of GexSi1−x alloys has been observed. The atomic fraction x of Ge was varied from 0.4% to 26%, and oxidations were performed at 740 °C under 102 atm of dry O2. It was observed that the effect of oxidation on the Ge distribution could be divided into three stages. In the initial stage of the oxidation, Ge was segregated from the growing oxide and accumulated in a Ge-rich layer at the oxide/alloy interface. For alloys with high Ge content this initial stage was very short. In the second stage of oxidation, after a critical quantity of Ge had accumulated at the interface, there was a transition from segregation to trapping of Ge in the oxide. In the third stage, the critical amount of Ge remained segregated at the interface, and the final oxide layer was Ge free. A kinetic model based on a steady-state equilibrium between the diffusive flux of Si across the Ge-rich layer and the rate of Si consumption by the oxidation reaction predicts, with reasonable agreement, the critical quantity of segregated Ge for the onset of trapping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354345
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