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  • 1990-1994  (6)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 448-450 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of GaAs on Si were grown by molecular beam epitaxy, which involves the solid phase epitaxial (SPE) growth of the amorphous GaAs buffer layer. A Rutherford backscattering minimum channeling yield of ∼9.4% has been obtained for a 0.8-μm-thick GaAs film. Cross-sectional transmission electron micrographs and reflection high-energy electron diffraction results have revealed that misfit dislocations are mostly confined to what used to be the buffer layer of ∼300 nm in thickness, and that the microtwins (and/or stacking faults) are mostly originated from the GaAs/Si interface and are generated during SPE growth.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 234-236 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth patterns around etched mesas were observed during the atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) of InP layers with and without addition of trichloroethane (TCA) and InGaAs layers. It was observed that the addition of TCA during the MOVPE of InP induced rapid growth along high-index directions such as [113] as well as much more enhanced faceting along (001) and (111)p planes, resulting in a planar regrowth around reactive ion etched mesas parallel to [110] directions. No irregularity or interruption of growth was observed, providing an ideal sequence for the blocking layer regrowth used in laser fabrication. Regrowth of InGaAs layers also resulted in a planar regrowth around the mesas along [110] directions but through a somewhat different mechanism. Growth on (111) planes was completely suppressed in this case and the facets were less clearly defined, so that growth from the base plane proceeded without interacting with the sidewalls.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3170-3172 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2 mask erosion has been studied during CH4/H2 reactive ion etching of InGaAsP/InP double heterostructures. The amount of mesa mask narrowing at a pressure of 100 mT, normalized for an etch depth of 3.5 μm, is approximately 0.4–0.6 μm and decreases slightly with increasing self-bias voltage. It is not strongly dependent on the sidewall angle of the mask or CH4 concentration. Mask residue deposits on the etched sidewall under conditions of relatively high CH4 concentration and low power density. Auger electron spectroscopic analysis of the sidewall shows that the deposit contains a significant amount of elemental Si, which suggests a mechanism for mask erosion in which SiO2 is reduced to Si in the hydrogen/hydrocarbon-rich environment of the plasma.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 28 (1993), S. 4787-4798 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A microstructural evaluation of Si3N4 containing 15–40 vol% SiC platelets or particles is presented. All the composites were fully densified by hot isostatic pressing without external addition of sintering aids. Size, morphology, surface roughness and crystal structures of the SiC phases before and after sintering were compared in order to discuss the structural stability of the reinforcements up to 2050 °C in Si3N4 matrix. Morphology and phase characteristics of the grain boundary are also discussed. In addition, homogeneity and isotropy of the composite bodies were quantitatively examined by image analysis techniques and it was recognized that, for a similar degree of dispersion, the characteristic of three-dimensional randomness could be preserved only at V f〈30% in the composites containing high aspect ratio platelets.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The microstructure of an Al2O3-24 vol% ZrO2 composite prepared by pressureless-sintering was investigated by high-resolution electron microscopy. The composite was formed of homogeneously dispersed ZrO2 and Al2O3 grains with average sizes of 0.3 and 0.5 μm, respectively. Most ZrO2 grains had a monoclinic structure, but a few ZrO2 embedded in Al2O3 grains were a tetragonal structure. At interfaces between ZrO2 with a lamella-type twin structure and Al2O3, microcracks were observed, in addition to strain fields in the Al2O3 matrix. Complex twin structures accompanied by dislocations were observed in ZrO2 with a spherical shape. In in situ observations with electron-beam heating, it was found that a crack propagated along an Al2O3/ZrO2 interface and stopped at the place where a tetragonal ZrO2 had undergone a structural change to monoclinic ZrO2.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 29 (1994), S. 1786-1794 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Fracture mechanisms in hot-isostatically pressed (HIP) Si3N4/SiC-platelet composites have been investigated by transmission electron (TEM) and scanning electron (SEM) microscopy followed by profilometric analyses. Two composites containing 25 vol% platelets were compared. They were fabricated from the same raw materials and by the same procedure except for the cooling rate from the sintering temperature. The study consists of experimental observations as well as measurements of fractographic parameters which dictates the level of toughening, such as the percentage of intergranular fracture, lengths and angles associated with the debonding process at the matrix/platelet interface. The presence of microcracking in the neighbourhood of the main crack, a higher fraction of intergranular fracture, as well as substantial debonding at the nitride/carbide interface up to high orientation angles were found in the composite cooled at low rates (∼ 100°Ch−1) which, despite the unchanged microstructure, was substantially tougher than that cooled at ∼ 650°Ch−1. These trends were not observed in the composite subjected to fast cooling. The stronger interfacial bonding found after fast cooling under high pressure was attributed to an apparent compressive stress remaining stored at the grain boundary, rather than to a weakening of the platelets or the matrix grains. Calculations based on the mechanics analysis of crack/interface interactions and on quantitative profilometric data, indicated a difference of about one order of magnitude in the apparent interface fracture energy of the two composites.
    Type of Medium: Electronic Resource
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