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  • 1990-1994  (10)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    "Designer'' interfaces in II-VI/III-V polar heteroepitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7021-7028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The development of composite materials incorporating both II-VI and III-V compound semiconductors, such as ZnSe and GaAs, leads to the possibility of a variety of new devices of potential importance to the communications industry. In many cases, such as those involving resonant tunneling junctions and quantum well structures, the quality of the interface between the different compound semiconductors determines the ultimate quality of the device itself. Therefore, we have investigated the factors determining this interface quality for the GaAs/ZnSe system as prepared by molecular beam epitaxy. In this system, the stoichiometry of the substrate is of paramount importance. An excess of one constituent leads to high local electrical fields and poor interface morphology. Optimum growth of ZnSe on GaAs is achieved with GaAs substrate surfaces having a stoichiometry intermediate between the As- and Ga-rich extremes. We will describe a model that defines the conditions for good interface formation and summarize experimental evidence which supports the validity of this model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347641
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    High-quality molecular-beam epitaxial regrowth of (Al,Ga)As on Se-modified (100) GaAs surfaces (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1038-1042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that high-quality molecular-beam epitaxial (MBE) regrowth of (Al,Ga)As on GaAs can be achieved by chemically passivating the GaAs surface ex situ prior to regrowth with aqueous selenium reagents. Reflection high-energy electron diffraction intensity oscillations show the bidimensional character of the regrowth and high-resolution transmission electron microscopy reveals defect-free regrown interfaces. Photoluminescence intensity from the Se-treated GaAs surfaces on which Al0.5Ga0.5 As is regrown rivals that from an all in situ grown AlGaAs/GaAs interface. The high quality of these regrown interfaces could be attributed to the thermally and chemically stable selenium and oxygen phases that remain bound to GaAs under MBE conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346742
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Contactless electrical characterization and realization of p-type ZnSe (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1033-1035 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe is a potentially useful optoelectronic material for applications requiring emission in the blue region of the spectrum. However, such applications necessitate the development of p-type material, for which reliable ohmic-contact technology does not exist. To avoid difficulties associated with contact formation while developing p-type material, we combine two contactless methods, reflectance-difference spectroscopy and inductive-coupled radio-frequency loss to determine carrier type and sheet resistance, respectively. Using this information we have prepared conducting p-type ZnSe by doping the material during growth with Li.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349687
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  • 4
    Electronic Resource
    Electronic Resource
    Optimal GaAs(100) substrate terminations for heteroepitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 355-357 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quality of heteroepitaxial growth of II-VI materials on III-V substrates, such as ZnSe on GaAs(100), depends strongly on the atomic structure and stoichiometry of the substrate. We define and describe those structures that optimize heteroepitaxial interface growth on GaAs(100) and related surfaces, and propose specific models for the c(6×4), "3×1'', (4×6), an As-lean version of the (2×4), and Se substitutional such as the (4×3). It is proposed that a good heteroepitaxial interface, with no extraneous fields and no charge imbalance, is achieved with substrate structures which lead directly to the appropriate interface stoichiometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104632
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Cathodoluminescence imaging of patterned quantum well heterostructures grown on nonplanar substrates by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 776-778 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report cathodoluminescence (CL) imaging and transmission electron microscopy (TEM) studies of patterned GaAs/AlAs quantum well (QW) heterostructures grown by molecular beam epitaxy on periodically corrugated substrates. Faceting and surface diffusion during crystal growth result in significant lateral variations in QW thickness which translate quantum size effects into lateral band-gap patterning. The CL images directly display lateral periodic modulation in quantum well thickness and indicate the existence of two lateral potential wells formed at the bottom and apex of corrugations. Emission wavelengths are in agreement with TEM data on the patterned structures. Such periodic patterned QW heterostructures should be useful for the realization of arrayed one- and zero-dimensional semiconductor quantum structures, particularly lateral superlattice heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102684
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  • 6
    Electronic Resource
    Electronic Resource
    Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 72-74 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown InGaAs/InAlAs quantum wells and InGaAs, InAlAs single layers over InP nonplanar substrates. Photoluminescence, transmission electron microscopy, and energy-dispersive x-ray analysis give evidence for large lateral thickness and compositional variations, which lead to in situ modification of the growth profile. These effects, which differ for InGaAs and InAlAs, reveal the importance of surface migration in (Al,Ga)InAs. Our results demonstrate a tool for in situ lateral patterning of this material system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102655
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Roughness at the interface of thin InP/InAs quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2688-2690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the interface roughness of InP/As quantum wells using photoluminescence and secondary ion mass spectroscopy. Typical photoluminescence spectra consist of multiple lines. The energies of the observed peaks have a remarkable behavior; namely, both the peak energies and the separations between peaks change from sample to sample. We discuss the interpretation of the observed emission lines in connection with questions such as interface roughness, island formation and lateral confinement. We also discuss the strong influence of parameters such as the growth temperature and the substrate orientation on the interface roughness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110421
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  • 8
    Electronic Resource
    Electronic Resource
    Optical transitions and chemistry at the In0.52Al0.48As/InP interface (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1981-1983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report properties of the InAlAs/InP interface and its formation during growth by organometallic molecular beam epitaxy. Taking advantage of the photoluminescence emission occurring at this type II interface, we were able to directly investigate the interface characteristics for different growth conditions. A shift is observed in the energy of the interface recombination transition which we interpret as evidence of a P-As exchange effect dependent on the specific growth sequence. This effect was further investigated by growing interfaces with thin layers (InAs, AlAs, AlP) between the InP and InAlAs. The results can be understood in terms of a model based on bond strength considerations. We predicted and demonstrated that the most stable interface is obtained with incorporation of a thin AlP interfacial layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107118
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of AlxGa1−xAs parabolic quantum wells by real-time feedback control of composition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1244-1246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial AlxGa1−xAs structures whose compositions x vary continuously with thickness according to a given input function have been grown by chemical-beam epitaxy under closed-loop ellipsometric control. 200- and 500-A(ring) parabolic quantum wells analyzed by photoreflectance and secondary-ion mass spectrometry, respectively, show that actual compositions follow target values to within 0.02 in x. Growth of the 200-A(ring) profile was controlled using compositions ellipsometrically determined for the outermost running 3.1 A(ring) (∼1 monolayer) of depositing material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107419
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  • 10
    Electronic Resource
    Electronic Resource
    As capture and the growth of ultrathin InAs layers on InP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3279-3281 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capture of As by (001) InP surfaces exposed to As fluxes under chemical beam epitaxy conditions is investigated by virtual-interface analysis of real-time kinetic ellipsometric data. Intentional growth of ultrathin InAs layers is readily followed. Arsenic accumulated in the absence of growth can be completely removed by exposure to P, showing that As-P exchange occurs only in the outermost layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111309
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