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  • 1990-1994  (10)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2035-2037 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report attaining Ga-terminated (4×2) surface reconstruction on virgin GaAs substrates using a completely dry process at temperatures below the oxide sublimation temperature and without group V overpressure. The native oxides are removed with an electron cyclotron resonance hydrogen plasma treatment, followed by annealing at 500 °C in ultrahigh vacuum, which yields a reconstructed surface suitable for epitaxial overgrowth. Characterization by secondary ion mass spectroscopy and transmission electron microscopy reveals the complete removal of O, reduced C, and high structural order at the epilayer/substrate interface when this preparation method is used before molecular beam epitaxy. Annealing the substrate at a lower temperature yields a nonreconstructed surface possessing significant impurity concentrations, and leads to dislocation defects at the epilayer/substrate interface.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1912-1915 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An instrument is described for the simultaneous measurement of circular dichroism at all wavelengths in a limited spectral range. A polychromator and a charge-coupled device (CCD), serving as multichannel sensor, are arranged behind the sample cell, which is located close to the entrance slit, in contrast to the arrangement of a monochromator before the cell and using a photomultiplier as radiation detector, as usual until now. The CCD with low-noise electronics is driven by the system clock of a microprocessing unit controlled by a quartz oscillator and works fully synchronously with modulation and acquisition cycles. This leads to a high suppression of noise and systematic deviations. An electro-optic modulator with approximately rectangular excitation voltage is used. Partial CD spectra over the range of 80 nm each down to 200 nm have been recorded. The detection of a smaller amount of substance is possible than with other modern commercial instruments such as a JASCO J-600, with the same signal-to-noise ratio.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2018-2020 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature characteristics of (InAs)1/(GaAs)4 superlattice quantum well lasers are analyzed both experimentally and theoretically. The measured threshold current density as a function of temperature is characterized by a T0=135 K for 115 K〈T〈380 K and by T0=47 K for 420 K〈T〈480 K. The radiative and nonradiative recombination rates and the gain versus carrier density relationship in monolayer superlattice structures are calculated. Inclusion of the nonradiative recombination process is necessary to explain the observed high-temperature characteristics of these lasers.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 735-737 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a method for the removal of AlxGa1−xAs native oxides for 0≤x≤1, prior to molecular beam epitaxial overgrowth. The oxides formed on epilayers of AlGaAs after atmospheric exposure are removed in an electron cyclotron resonance hydrogen plasma with a substrate temperature less than 400 °C. Reflection high energy electron diffraction indicates the plasma-prepared AlGaAs surface are oxide-free and crystalline; after a vacuum anneal to 250–500 °C, GaAs or AlGaAs are epitaxially overgrown on these surfaces. Secondary ion mass spectroscopy detects C, O, and Si impurities at the interfaces, where their concentrations increase with increasing Al content of the exposed surface. The quality of the interface and the overgrown film, as observed by transmission electron microscopy, are found to be better for lower interface impurity densities.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 924-925 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication and performance characteristics of (InAs1)/(GaAs)4 short-period superlattice (SPS) strained quantum-well lasers emitting near 1 μm. The SPS consists of 6 periods of 1 and 4 ML of InAs and GaAs, respectively. The 250-μm-long ridge waveguide lasers have a threshold current of 10 mA, an external differential quantum efficiency of 0.35 mW/mA facet, and have operated to a temperature of 200 °C.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1738-1740 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial regrowth by solid-source molecular beam epitaxy (MBE) on dry etched heterostructures possessing exposed AlAs surfaces is accomplished for the first time using a vacuum integrated processing. Samples composed of multilayers of AlAs and AlGaAs are patterned with a SiO2 mask and are anisotropically etched using a low damage electron cyclotron resonance (ECR) SiCl4 plasma process. Etched samples are transferred in ultrahigh vacuum between the ECR and MBE chambers to avoid atmospheric exposure before regrowth. Microstructural analysis of the overgrown layers by scanning and transmission electron microscopy indicates that epitaxial regrowth on both the etched field and vertical sidewalls is achieved. The regrown material is found to contain microtwin plates, but few dislocations, indicating the good quality of the overgrowth.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2658-2660 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a novel dry process to remove the surface contaminants C, Si, and O from GaAs substrates. This method utilizes an electron cyclotron resonance hydrogen plasma to remove the native oxides, followed by a very brief Cl2 chemical etching of GaAs to further reduce C and Si residues, and a final vacuum anneal. Characterization by secondary ion-mass spectrometry (SIMS) typically reveals the removal of C, Si, and O at the overgrown/processed interface to the levels below the SIMS detection limit. The as-processed GaAs surface, a Ga-stabilized reconstructed (4×6), is atomically smooth, and is as clean as a surface of freshly grown GaAs epilayers.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    International orthopaedics 15 (1991), S. 101-104 
    ISSN: 1432-5195
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Résumé L'association d'hyperostoses costo-sterno-claviculaires et d'une pustulose palmo-plantaire, quelquefois avec spondylite hyperostosante et spondylarthrite, est appelée ostéo-arthropathie pustuleuse. Quarante cas ont été rapportés en Occident, alors que ce syndrome survient plus fréquemment en Extrême-orient. Présentation de cinq cas. Le diagnostic est difficile parce que les lésions cutanées peuvent apparaître avant les hyperostoses. Le tableau clinique est discuté à l'occasion du diagnostic différentiel. L'ostéo-arthropathie pustuleuse semble être une enthésite et la pustulose palmo-plantaire peut être rapprochée du psoriasis.
    Notes: Summary A combination of costo-sterno-clavicular hyperostosis and palmo-plantar pustulosis, sometimes with hyperostotic spondylosis and spondylarthritis, is called pustular osteoarthropathy. In the Western hemisphere 40 cases have been reported and in the Far East the condition occurs more commonly. Five cases are described. Diagnosis is difficult because the skin lesions can occur before the costo-sterno-clavicular hyperostoses. The clinical condition is discussed together with the differential diagnosis. Pustular osteoarthropathy seems to be an enthesopathy and the palmoplantar pustulosis is interpreted as a form of psoriasis.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    International orthopaedics 17 (1993), S. 188-192 
    ISSN: 1432-5195
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Résumé Dans une étude prospective on a effectué chez 9 malades atteints d'arthrite rhumatoïde une double photo-absorptiométrie avant une synovectomie du genou, ainsi que 3, 6, 12 et 24 mois après l'opération. Cet examen a permis d'évaluer quantitativement le degré d'ostéoporose juxta-articulaire. La densité osseuse a ensuite été comparée à un groupe de contrôle sans lésions du genou. Les mesures faites après synovectomie montrent une augmentation de la minéralisation osseuse à partir du sixième mois post-opératoire. Ceci prouve que la densitométrie de l'os constitue un indicateur objectif de l'évolution de l'ostéoporose juxta-articulaire dans les rhumatismes inflammatoires.
    Notes: Summary In a prospective study 9 patients, who were going to have a synovectomy for rheumatoid arthritis of the knee, underwent dual photon absorptiometry before, and at intervals after, operation. This determined the degree of juxta-articular osteoporosis quantitatively. The density was compared to a control group with normal knees. The follow up measurements showed an improvement in the juxta-articular bone mineral content after the 6th month. This demonstrates that bone densitometry is an objective indicator of the development of juxta-articular osteoporosis in inflammatory joint disease.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1573-5117
    Keywords: aquatic birds ; phosphorus loading ; trophic state ; eutrophication
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Lakes and reservoirs provide water for human needs and habitat for aquatic birds. Managers of such waters may ask whether nutrients added by waterfowl degrade water quality. For lakes and reservoirs where primary productivity is limited by phosphorus (P), we developed a procedure that integrates annual P loads from waterfowl and other external sources, applies a nutrient load-response model, and determines whether waterfowl that used the lake or reservoir degraded water quality. Annual P loading by waterfowl can be derived from a figure in this report, using the days per year that each kind spent on any lake or reservoir. In our example, over 6500 Canada geese (Branta canadensis) and 4200 ducks (mostly mallards, Anas platyrhynchos) added 4462 kg of carbon (C), 280 kg of nitrogen (N), and 88 kg of P y−1 to Wintergreen Lake in southwestern Michigan, mostly during their migration. These amounts were 69% of all C, 27% of all N, and 70% of all P that entered the lake from external sources. Loads from all external sources totaled 840 mg P m−2 y−1. Application of a nutrient load-response model to this concentration, the hydraulic load (0.25 m y−1), and the water residence time (9.7 y) of Wintergreen Lake yielded an average annual concentration of total P in the lake of 818 mg m−3 that classified the lake as hypertrophic. This trophic classification agreed with independent measures of primary productivity, chlorophyll-a, total P, total N, and Secchi disk transparency made in Wintergreen Lake. Our procedure showed that waterfowl caused low water quality in Wintergreen Lake.
    Type of Medium: Electronic Resource
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