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Reactive sputtering deposition of low temperature tantalum suboxide thin films (1993)

Wu, X. M. ; Wu, P. K. ; Lu, T.-M. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 3264-3266

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A relatively simple direct current sputtering deposition scheme has been employed to deposit 1000 A(ring) tantalum oxide thin films at low temperature. At (approximately-equal-to)190 °C substrate temperature, without further annealing, tantalum oxide films with a dielectric constant of 21–22 and a leakage current density as low as 10 nA/cm2 at 0.5 MV/cm electrical field strength (∼5 V of applied voltage) are obtained. These properties are achieved over a wide range of O2/Ar ratios when the total flow rate is kept constant. XPS measurements reveal that these films are nonstoichiometric with a composition of TaOx where x(approximately-equal-to)1.5. These low temperature, high dielectric constant thin films have potential applications as decoupling capacitors in very high speed electronic circuits and packaging.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.109094

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Digitale Medien

Interaction of amorphous fluoropolymer with metal (1994)

Wu, P. K. ; Yang, G.-R. ; Ma, X. F. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 65 (1994), S. 508-510

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The bonding structure of an amorphous fluoropolymer, AF 1600, with Al, Ag, Au, and Cu were examined using x-ray photoelectron spectroscopy. 100 A(ring) thick films of AF 1600 were deposited on various metal films. AlF3 was found at the AF 1600/Al interface. F detached from the −CF3 functional group of the AF 1600, diffused into the Al/Al2O3 matrix and formed AlF3. The diffusion depth of F is estimated to be (approximately-greater-than)150 A(ring). An Al film was evaporated onto an AF 1600 film. The Al film was then mechanically peeled off and the remaining polymer surface examined. AlF3 was again found. For the spin-on AF 1600 film on Ag, Au, and Cu, no chemical reaction between the metal and the polymer were found.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.112281

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