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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 8845-8850 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 150-157 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the effect of Zn indiffusion on enhancing the GaAs/AlAs superlattice (SL) disordering process, which combines recently proposed models for Ga self-diffusion and Zn diffusion in GaAs, is presented. Four coupled partial differential equations describing the process were solved numerically. Satisfactory agreement between the simulated results and experimental data available in the literature is obtained. At a given temperature, the used values for the diffusion coefficient and the thermal equilibrium concentration of the responsible point defect species, the doubly positively charged Ga self-interstitials IGa2+, are a consistent splitting of the known Ga self-diffusion coefficient dominated by IGa2+. Quantitatively, the SL disordering enhancement is mainly due to the Fermi-level effect while an IGa2+ supersaturation also makes a small contribution. Because of p-doping by Zn acceptor atoms, the IGa2+ concentration is increased tremendously via the Fermi-level effect. An IGa2+ supersaturation also develops because the IGa2+ generation rate is higher than its removal rate. The enhanced SL disordering process mainly proceeds under the Ga-rich SL composition conditions. The Zn-indiffusion-enhanced Al-Ga interdiffusion coefficient shows an apparent dependence on the Zns− concentration differing slightly from a quadratic relationship.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4365-4369 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diodes with shallow p+n junctions were contacted with titanium silicide films which were formed by ion beam mixing with germanium. The leakage current of these diodes was observed to be dominated by a generation mechanism in the space charge layer. Deep level transient spectroscopy and secondary-ion mass spectroscopy measurements revealed that ion beam mixing with heavy ions leads to recoil implantation of titanium atoms into the silicon substrate. The temperature and reverse bias behavior of the leakage current could be consistently explained by Shockley–Read–Hall generation mechanism [Phys. Rev. 87, 385, 387 (1952)] and by Poole-Frenkel barrier lowering [Phys. Rev. 54, 647 (1938)] of the double donor level Ti+/++ at Ev+0.2 eV.4
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2178-2186 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: 2H-nuclear magnetic resonance was applied to single crystals of the clathrate of Dianin's compound with ethanol as a guest. The hydroxyl groups of both the host lattice and the guest were deuterated. The temperature dependences of the 2H spectra and of the quadrupole coupling tensors of the host lattice deuterons provide evidence that these deuterons carry out jumps between two unequally populated sites. These jumps may be visualized as approximate rotations of the hydroxyl groups about the C–O bonds. The occupancies of the two sites were measured and found to follow a Boltzmann distribution at T〉145 K. At lower temperatures the minority sites are overpopulated. The temperature dependence of the jump rate was determined by line shape analyses and relaxation time measurements. From the absence of dipolar fine structure in the 2H spectra recorded for specially chosen crystal orientations it is concluded that groups of six hydroxyl units carry out their rotational jumps in a concerted manner.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 7699-7710 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The method of two-dimensional exchange spectroscopy under condition of magic angle sample spinning (MAS) and synchronization of the mixing time with the rotor period is extended to spin I=1 nuclei. Theoretical equations are derived for the cross peak intensities as a function of the magnetic and kinetic parameters of the system and the method is demonstrated on a number of deuterated compounds. Dimethylmalonic acid–d6 is first used to illustrate the effect of rotor synchronization by the complete absence of cross peaks when no exchange takes place. The method is then applied to two dynamic systems, viz. dimethylsulfone–d6 and thiourea–C6D12 inclusion compound. The experimental results are compared with simulations as well as with analogous experiments on nonspinning samples. Since chemical shift effects are often negligible in deuterium NMR the time domain sampling can in principle be reduced to the number of the desired spinning sidebands, resulting in considerable time savings. The main advantage of the method is the gain in sensitivity at the expense of the characteristic ridge pattern of static two-dimensional exchange experiments. The gain in sensitivity may be sufficient for performing such experiments on deuterium in isotopically normal compounds. The feasibility of such experiments is demonstrated by the recording of a one-dimensional deuterium MAS spectrum of a nonenriched sample.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5927-5938 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Deuterium nuclear magnetic resonance (NMR) spectra are presented for homologues of two series of pyramidic liquid crystals, viz., hexaalkyloxytribenzocyclononatriene, I-n, and hexaalkanoyloxytribenzocyclononatriene, II-n, (where n represents the number of carbon atoms per side chain). The homologues of series I-n exhibit a single hexagonal columnar mesophase PA, while those of series II-n exhibit one or two columnar mesophases (depending on n); a low-temperature biaxial phase PD, and a high-temperature hexagonal phase PC. NMR measurements were performed in the mesophase region on compounds specifically deuterated at the crown methylene groups of the tribenzocyclononatriene core. The spectra in both systems exhibit dynamic features typical of molecules reorienting about their C3 axes within the columnar structures. The experimental spectra were compared with simulated line shapes calculated on the basis of two reorientation mechanisms, (i) symmetric threefold jumps and (ii) planar diffusion about the molecular symmetry axis. It was found that the two compounds of series I-n studied, I-7 and I-10, exhibit spectral line shapes which fit best the planar diffusion model, as was found earlier for the I-8 homologue of this series, while the spectra of the three compounds of series II-n, II-13, II-14, and II-15 are only consistent with the symmetric threefold jump model. Possible reasons for the difference in behavior between the two series are discussed. In an Appendix the asymptotic method for calculating frequency-domain spectra is described.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 55 (1990), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: To monitor the fate of the synaptic vesicle membrane compartment, synaptic vesicles were isolated under varying experimental conditions from blocks of perfused Torpedo electric organ. In accordance with previous results, after low-frequency stimulation (0.1 Hz, 1,800 pulses) of perfused blocks of electric organ, a population of vesicles (VP2 type) can be separated by density gradient centrifugation and chromatography on porous glass beads that is denser and smaller than resting vesicles (VP1 type). By simultaneous application of fluorescein isothiocyanate-dextran as extracellular volume marker and [3H]acetate as precursor of vesicular acetylcholine, and by identifying the vesicular membrane compartment with an antibody against the synaptic vesicle transmembrane glycoprotein SV2, we can show that the membrane compartment of part of the synaptic vesicles becomes recycled during the stimulation period. It then contains both newly synthesized acetylcholine and a sample of extra cellular medium. Recycled vesicles have not incorporated the presynaptic plasma membrane marker acetylcholinesterase. Cisternae or vacuoles are presumably not involved in vesicle recycling. After a subsequent period of recovery (18 h), all vesicular membrane compartments behave like VP1 vesicles on subcellular fractionation and still retain both volume markers. Our results imply that on low-frequency stimulation, synaptic vesicles are directly recycled, equilibrating their luminal contents with the extracellular medium and retaining their membrane identity and capability to accumulate acetylcholine.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 499-501 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A third dominant platinum level is reported. The concentrations of the new level and of the platinum donor level at 0.330 eV above the valence band are equal to each other within 20% over a range exceeding three orders of magnitude in concentration. The new level at approximately 0.067 eV above the valence band is characterized by the method of deep level transient spectroscopy. Its activation energy is shown to be dependent on the electric field. Platinum is suggested to be a double donor in p-type silicon. All three dominant platinum levels are believed to belong to the same platinum center in silicon.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 75-77 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of iron in indium phosphide is found to proceed via the kick-out diffusion mechanism. A Fe diffusion profile in InP available from the literature is simulated using the complete set of three partial differential equations for the kick-out mechanism. A value for the contribution of indium self-interstitials to the self-diffusion coefficient of InP is extracted and found to be much smaller than the known self-diffusion coefficient determined from indium tracer diffusion measurements. Possible reasons for the observed difference are discussed. Furthermore, an analogy of diffusion in InP to diffusion in GaAs is suggested.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3250-3252 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation of oxygen precipitates in Czochralski silicon is examined in an early stage by measuring vacancy profiles with platinum diffusion. Using an analytical expression, which was deduced from the equations of the Frank–Turnbull diffusion mechanism, the vacancy profiles are calculated from measured platinum diffusion profiles. The vacancy concentration of differently treated Czochralski (CZ) material is compared to the vacancy concentration of float zone (FZ) silicon. In CZ silicon a decrease of the vacancy concentration with increasing nucleation time and platinum diffusion time is found. This decrease cannot be explained by a supersaturation of silicon self-interstitials caused by nucleation and by recombination of self-interstitials and vacancies alone. A direct consumption of vacancies during nucleation also is present. The annihilation rate of the vacancies during nucleation can be estimated to be smaller than 5×108 cm−3 s−1 at 770 °C.
    Type of Medium: Electronic Resource
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