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  • 1
    Electronic Resource
    Electronic Resource
    Diffusion of polymer rings in linear polymer matrices (1987)
    s.l. : American Chemical Society
    Macromolecules 20 (1987), S. 513-518 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00169a008
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  • 2
    Electronic Resource
    Electronic Resource
    Phase separations of amorphous CoW films during oxidation and reactions with Si and Al (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1957-1967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactions of thin Co55 W45 films in contact with Si(100) substrates and aluminum overlayers annealed in vacuum in the temperature ranges of 625–700 °C and 500–600 °C, respectively, and of thin Co55W45 films in air from 500 to 600 °C were investigated by Rutherford backscattering spectrometry, glancing angle x-ray diffraction, and scanning electron microscope techniques. CoW alloy films were amorphous and have a crystallization temperature of 850 °C on SiO2 substrates. The compound formed is Co7 W6. Phase separations were found in all the reactions. A layer of cobalt compounds (CoSi2 in Si/CoW, Co2 Al9 in CoW/Al, and Co3 O4 in CoW with air) was found to form at the reaction interfaces. In addition, a layer of mainly tungsten compounds (WSi2 in Si/CoW, WAl12 in CoW/Al, and WO3 in CoW with air) was found next to cobalt compound layers, but further away from the reaction interfaces. The reactions started at temperatures comparable to those required for the formation of corresponding tungsten compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342885
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  • 3
    Electronic Resource
    Electronic Resource
    Coevaporation and ion implantation of Pd50Ti50 and Pt50Ti50 on AISI stainless steels for reducing wear and friction (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 300-304 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pd50Ti50 and Pt50Ti50 alloy films were deposited on stainless-steel substrates and irradiated with ion beams. The samples were tested on pin-on-disk wear equipment and analyzed by Rutherford backscattering spectrometry and scanning and transmission electron microscopy. Adding Pd50Ti50 and Pt50Ti50 as a surface layer to stainless steel resulted in reduced wear and friction. Xe implantation slightly improved tribomechanical properties, while N implantation led to a dramatic reduction in wear and friction. The improvement was thought to be associated with nitride precipitation hardening and/or forming lubricious oxides during sliding. The as-deposited films exhibited amorphous structures and transformed to equilibrium compounds upon annealing. Sliding tests on amorphous and crystalline films did not show a significant difference in friction and wear behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342540
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  • 4
    Electronic Resource
    Electronic Resource
    Pt4Si9 formation by hot substrate ion beam mixing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4651-4654 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct, ion induced formation of metastable compounds in the Pt-Si system has been investigated by implantation with Xe ions through the PtSi-Si interface in the temperature range of 35–325 °C. The mixing increased parabolically with dose and exhibited an exponential dependence on reciprocal temperature with an apparent activation energy of about 0.11 eV. The mixed layer became progressively uniform in composition with increasing temperatures and a well-defined surface layer with a composition of Pt4Si9 was obtained at relatively high temperatures. The Pt4Si9 phase was indexed as a hexagonal crystal structure and transformed back into PtSi and Si at temperatures above 550 °C by thermal steady-state annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340118
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  • 5
    Electronic Resource
    Electronic Resource
    Reordering of polycrystalline Pd2Si on epitaxial Pd2Si (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2402-2405 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Pd2Si is found to reorder on top of epitaxial Pd2Si during silicide growth. The interface between polycrystalline Pd2Si and epitaxial Pd2Si is, thus, not immobile with respect to the silicide lattice during silicide formation and it is, therefore, not possible to use this interface as a structural marker in order to monitor diffusion in epitaxial Pd2Si. The use of Ti as an inert marker has shown that Si is the dominant diffusing species in epitaxial Pd2Si during silicide formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341059
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  • 6
    Electronic Resource
    Electronic Resource
    Amorphous diffusion barriers in Al-Si and Au-Si contacts (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4177-4181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Coevaporated amorphous Co50Ta50 and Co50Mo50 alloys were investigated for applications as diffusion barriers in Al-Si and Au-Si metallization. The high-temperature stability of diffusion barriers has been found to be correlated with the thermodynamical driving forces for chemical reaction between the barrier constituents and their surroundings. Amorphous Co50Ta50 films react with Al overlayers at temperatures around 450 °C, much lower than the crystallization temperature. A TaAl3 layer interposed between the amorphous film and the Al overlayer provides an ideal scheme against degradation during high-temperature annealing. Amorphous Co50Mo50 alloys possess low mutual solubilities and unfavorable free energies for compound formation with Au; it thus remains intact and prevents the interaction between the Si substrate and an overlay Au film during thermal annealing at 550 °C. Degradation of the layered structure at localized points is observed and attributed to the presence of pinholes and other macroscopic defects in the amorphous film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337502
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of krypton on CrSi2 formation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1998-2001 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence and redistribution of the inert gas Kr in chromium silicide formation have been investigated by MeV He backscattering spectrometry and transmission electron microscopy. It was found that krypton implanted in the chromium film remains stationary with respect to the chromium during silicide formation, but krypton implanted in the silicon substrate accumulate at the silicon/silicide interface. The effect of krypton on the rate of silicide formation is much more pronounced when the krypton is in the chromium rather than in the silicon substrate. The thermal growth of CrSi2 is linear with time in a krypton-free sample, but becomes parabolic when the krypton is incorporated in the silicide at a concentration of 1 at. %. The activation energy associated with Si diffusion through CrSi2 is increased from 1.4±0.1 eV to 2.6±0.1 eV by the presence of krypton in the silicide. The results are interpreted as being due to segregation of krypton on grain boundaries in CrSi2 and subsequent retardation of diffusion along the boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336379
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  • 8
    Electronic Resource
    Electronic Resource
    Al/TiW reaction kinetics: Influence of Cu and interface oxides (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3440-3443 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction kinetics of Al with Ti22W78 alloys has been investigated under vacuum annealing conditions. In particular, the effects of Cu in Al and venting during deposition of TiW were studied. It was observed that Cu did not play any significant role in the kinetics of the interdiffusion of Al and TiW. During the reaction process at temperatures around 500 °C, Ti accumulated on the surface of the samples with or without Cu in Al. The Ti accumulation is diffusion limited with an activation energy of 2.4 eV. Interface oxides are believed to be primarily responsible for the stability of Al/TiW metallization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335764
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of Cu as an impurity in Al/V thin-film reactions (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1838-1840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film reactions of Al/V with and without 4 at. % Cu in the Al have been studied by Rutherford backscattering, x-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy after vacuum annealing in the temperature range 300–500 °C. In the Al/V system, the intermetallic phase VAl3 grows as (time)1/2 with an activation energy of 2.1±0.2 eV. The presence of Cu in the Al retards the VAl3 growth and alters the phase sequence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336036
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  • 10
    Electronic Resource
    Electronic Resource
    Thermally and ion-induced phase formation in a Pd/Ge bilayer (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3600-3603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pd/Ge bilayer samples with three different overall compositions centered around Pd2Ge have been thermally annealed or irradiated with 300 keV Kr ions at room temperature. We observed that the first phase formed with ion irradiation, as in thermal annealing is Pd2Ge. In the Pd75Ge25 sample, the formation of an amorphous phase as well as the Pd2Ge phase has been observed after 3×1015 Kr+/cm2 irradiation. Successive irradiations up to the 5×1015 Kr+/cm2 led to the demixing of this amorphous phase to Pd2Ge and Pd.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344066
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