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  • 1
    Electronic Resource
    Electronic Resource
    Neonatal macrosomia in maternal diabetes (1980)
    Springer
    Diabetologia 18 (1980), S. 407-411 
    Details
    ISSN: 1432-0428
    Keywords: Streptozotocin diabetes in rat ; maternal diabetes ; neonatal macrosomia ; protein ; DNA ; DNA polymerase-α
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary In order to determine the effect of maternal diabetes on the somatic growth of the rat fetus and to elucidate mechanisms underlying the control of fetal growth, concentrations of DNA and proteins and DNA polymerase-α activities in neonates were examined. The maternal status was classified as normal (no urinary glucose excretion), mildly diabetic (0.01–0.99 g/day urinary glucose), and severely diabetic (1.00 g/day or more urinary glucose). The total DNA contents in mg/neonate were 26.8 ± 2.2 (mean ± SEM), 31.3 ± 2.5, and 29.4 ± 2.7 for neonates from normal, mildly diabetic and severely diabetic mothers, respectively. The DNA polymerase activities in (cpm/g neonate) x 10-3 for the same groups of neonates were 432 ± 58, 1,008 ± 74, and 888 ± 118, respectively. These results indicate that the neonatal macrosomia disappears as the severity of maternal diabetes increases. Furthermore, DNA polymerase is one of possible biochemical sites through which macrosomia is manifested in diabetic pregnancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00276822
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  • 2
    Electronic Resource
    Electronic Resource
    Fetal macrosomia in diabetic multiparous animals (1981)
    Springer
    Diabetologia 20 (1981), S. 213-216 
    Details
    ISSN: 1432-0428
    Keywords: Streptozotocin diabetes in rat ; fetal macrosomia ; rate of substrate influx ; leucine influx ; thymidine influx ; AIB influx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Mild diabetes (blood glucose ranging from 130 to 200 mg/100 ml) was induced in female rats by streptozotocin administration prior to mating. Fetuses obtained from these diabetic mothers on 20.5, 19.5 and 18.5 days of gestation were compared with corresponding fetuses from control mothers. Macrosomia was defined as a fetus whose body weight exceeded the mean + 2.5 SD of fetal weight obtained from the control fetal population. Similarly, the rate of substrate influx was considered abnormally high when an individual value (cpm/g tissue of radioactive tracer) exceeded mean + 2.5 SD of control value. The frequencies of macrosomia in control groups and in diabetic groups were 1/98 and 15/110 respectively, on 20.5 day of gestation, 1/155 and 14/ 148 on 19.5 day, and 0/99 and 0/98 on 18.5 day. The rates of influx of thymidine, leucine, and alphaaminoisobutyric acid from maternal side to the macrosomic fetuses were increased as much as 20 times the corresponding rates in control fetuses. Despite the lack of macrosomia as defined here in the fetal population on 18.5 day of gestation, a significantly larger proportion of litters from diabetic mothers (5 litters/5 litters) contained one or more fetuses showing abnormally high rate of thymidine influx than the litters from control mothers (0 litter/5 litters). These results suggest that only a selected few fetuses in a litter from a diabetic mother become macrosomic and a marked stimulation in the rate of metabolite influx into fetuses precedes the manifestation of macrosomia.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00252630
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  • 3
    Electronic Resource
    Electronic Resource
    Rotational energy distribution of products in fast hydrogen atom–molecule collisions (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 5486-5492 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Starting from the formalism of collisional time-correlation functions, an expression is derived for the double differential cross section (with respect to scattering angles and final rotational energies) of molecules with a thermal distribution of initial rotational states, colliding with fast atoms. This expression is valid when the duration of the collision is short compared with the periods of internal motions of target molecules. The formulation leads to simple distributions in terms of error functions, which can be used to parametrize experimental results. The parameters in turn give the average rotational energy and its standard deviation for the final state. This procedure is followed to interpret recent experimental measurements of the final rotational distributions of CO and CO2 colliding with fast hydrogen atoms obtained from the photolysis of hydrides. For CO(v=1) and CO2(0001), in which the collisions are impulsive, the derived formula fits the experimental distribution very well. For CO(v=0), in which long-duration, complex-forming collisions play an important role, an additional statistical distribution can be introduced to satisfactorily explain the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456453
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  • 4
    Electronic Resource
    Electronic Resource
    Direct measurements of energy transfer between identical chromophores in solution (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 7557-7562 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rate of intramolecular electronic excitation energy transfer in 9,9' bifluorene has been investigated in a variety of solvents, using both time-correlated single photon counting and femtosecond fluorescence upconversion technique. The kinetics of energy transfer were determined in both cases by time dependent fluorescence anisotropy measurements. The energy transfer dynamics between fluorene moieties has been found to occur on a time scale of approximately 600 fs in different solvents and has been correlated with the T2 value calculated from the absorption linewidth and the β value obtained from jet measurements. The dihedral angle between the fluorene moieties was also calculated from the anisotropy measurement and compared with the values obtained from a solution phase NMR determination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457279
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  • 5
    Electronic Resource
    Electronic Resource
    Three-dimensional structure of acyl carrier protein determined by NMR pseudoenergy and distance geometry calculations (1988)
    s.l. : American Chemical Society
    Biochemistry 27 (1988), S. 6135-6142 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00416a046
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  • 6
    Electronic Resource
    Electronic Resource
    Anomalous transient diffusion of boron implanted into preamorphized Si during rapid thermal annealing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2316-2318 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of boron implanted into preamorphized silicon has been studied using secondary-ion mass spectroscopy and transmission electron microscopy. A surface preamorphized layer was created by double silicon ion implantation and the as-implanted boron profiles were confined completely within the preamorphized layer. Results show that boron diffusion during rapid thermal annealing (RTA) is anomalous in nature, and that the magnitude of the anomalous diffusion depends upon the RTA temperature. While RTA at 1150 °C shows an enhanced boron diffusion compared to that in single crystalline samples, a reduced diffusion is observed in preamorphized samples annealed at 1000 °C. Results are discussed in terms of the difference in the defect evolution during RTA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102048
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  • 7
    Electronic Resource
    Electronic Resource
    Sputter deposition of YBa2Cu3O7−x films using a hemispherical target in a Hg vapor triode plasma (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1187-1189 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality stoichiometric films of YBa2 Cu3 O7−x have been grown epitaxially on SrTiO3 substrates by sputtering from a stoichiometric target of hemispherical shape using a Hg vapor triode plasma. Films exhibited superconducting transitions of a width ΔT∼2.5 K, with zero resistance being achieved at 89 K. From both the x rays and the temperature dependence of the normal-state electrical resistance it can be inferred that the films contain an admixture of domains with either the c or a axes normal to the plane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99671
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  • 8
    Electronic Resource
    Electronic Resource
    Hg incorporation in CdTe during the growth of HgTe-CdTe superlattices by molecular beam epitaxy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1545-1547 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: HgTe-CdTe superlattices and other microstructures such as single and double barrier tunneling structures are commonly grown by molecular beam epitaxy with the mercury flux continuously on the sample during the growth. This means that some mercury will be incorporated in the CdTe layers. We present here, for the first time, a measurement of the amount of mercury incorporated in thin layers of CdTe. X-ray photoelectron spectroscopy was used to measure the amount of mercury. The amount of mercury was found to be between 3 and 9% for CdTe (111)B, depending on the growth conditions. The amount of mercury was found to increase with mercury flux and to decrease as the substrate temperature was increased. Under the same conditions, it was found that much more mercury was incorporated in the (100) orientation. The type of substrate (CdTe or GaAs) was not found to influence the results. These results indicate that the amount of mercury in the CdTe layers of HgTe-CdTe superlattices is not quite as low as expected from measurements of thick CdTe layers, but it can be low enough that it does not influence significantly the results on the superlattice system in the (111) orientation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98630
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  • 9
    Electronic Resource
    Electronic Resource
    Highly efficient separate-confinement PpinN GaAs/AlGaAs waveguide phase modulator (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1865-1867 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a high-efficiency PpinN GaAs/AlGaAs waveguide phase modulator for high-speed operations. By introducing p- and n-GaAs layers beside the intrinsic GaAs layer of a P-i-N double heterostructure, the absorption edge-related effect, hardly used in P-i-N phase modulators, is utilized. We demonstrate a high phase shift efficiency of 37.5°/V mm at 1.3 μm wavelength. Although this corresponds to the highest expeirmental value reported for reverse-biased GaAs/AlGaAs phase modulators, our device operates with a low junction and a very low dynamic capacitance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102155
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1732-1734 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-energy ultrahigh-vacuum compatible ion gun with single-grid optics was used to provide accelerated Sb ion doping during the growth of Si(100) by molecular beam epitaxy (MBE). The incorporation probability of accelerated Sb in MBE Si films grown at 800 °C with an ion acceleration potential of 150 eV was near unity, more than four orders of magnitude higher than for thermal Sb. The films exhibited complete dopant substitutionality and temperature-dependent electron mobilities were equal to the best reported bulk Si values for Sb concentrations up to 2×1019 cm−3, more than an order of magnitude higher than obtainable by thermal Sb doping during Si MBE. Transmission electron microscopy examination of all films showed no evidence of dislocations or other extended defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99809
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