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  • 1
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of InSb on silicon by metalorganic magnetron sputtering (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 51-53 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial films of InSb have been deposited by metalorganic magnetron sputtering (MOMS) on 〈100〉 silicon substrates using molecular beam epitaxy (MBE) GaAs buffer layers. X-ray diffraction and cross-sectional transmission electron microscopy measurements indicate the epilayers to be structurally similar to layers deposited by MOMS and MBE on high quality GaAs substrates, despite the increased defect density of the GaAs buffer layer. Some of the defects within the buffer layer propagate into the InSb epilayer; however, the majority of defects arise from the lattice mismatch at the interfacial region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100123
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  • 2
    Electronic Resource
    Electronic Resource
    The structural and compositional characterization of InSb films prepared by metalorganic magnetron sputtering (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2949-2953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic magnetron sputtering has been used to deposit polycrystalline and homoepitaxial films of indium antimonide. In this technique a metal antimony target is magnetron sputtered in a reactive vapor of trimethylindium (TMI). Stoichiometric layers of indium antimonide could be deposited for all growth temperatures studied (20–370 °C). However, below 250 °C the films were either amorphous or composed of very small crystallites. Above 290 °C the layers were epitaxial as determined from the electron channeling patterns observed. For these layers the growth rate was controlled by the TMI flow with the excess antimony flux acting to stabilize the surface. The surface morphology was excellent with "mirrorlike'' surfaces except at high TMI flows where indium surface droplets were formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337084
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  • 3
    Electronic Resource
    Electronic Resource
    Finite-element analysis of radio-frequency quadrupole traps (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2883-2888 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A radio-frequency quadrupole ion trap is an axisymmetric arrangement of electrodes used to contain charged particles. The field between the electrodes must be calculated using numerical techniques, as practical implementations of the trap cause the potential distribution to deviate from the closed form. The finite-element method has been used to compute the electric field and a fourth-order numerical integration has been written to compute ion trajectories inside the trap. Together, these computations were used to study the injection of ions into traps. Results from injection simulations are compared with experimental observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342733
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  • 4
    Electronic Resource
    Electronic Resource
    15-cm hybrid ion diode on PBFA-I (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3522-3534 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diode experiments on the PBFA-I pulser using a magnetically insulated ion diode are described. The insulating magnetic field is supplied by self-field due to the ion current plus the field generated by a series field coil. In the experiments described here, the diode operated at the 10-TW, 2.5-MV level with over 300 kJ going to the diode on many shots. The operation of the diode, the dielectric anode, and the proton beam focusing are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339275
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of substrate temperature on the growth rate and surface morphology of heteroepitaxial indium antimonide layers grown on (100) GaAs by metalorganic magnetron sputtering (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 585-590 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of substrate temperature and III/V ratio on the growth rate and surface morphology of heteroepitaxial InSb films grown on GaAs(100) using metalorganic magnetron sputtering has been studied. The surface morphology showed a strong dependence on growth temperature and III/V ratio. Films with "mirrorlike'' surfaces could be routinely obtained for deposition temperatures near 400 °C. For films grown above 300 °C, the growth rate increased with increasing trimethylindium flow, at constant antimony sputter power, and exhibited a peak near 400 °C. In this region the growth rate was thermally activated with an observed activation energy of 0.24 eV. Above 400 °C the growth rate decreased with increasing temperature. The surface morphology of these higher-temperature layers indicated a selective etching process as the mechanism for growth rate reduction. Cross-sectional transmission electron microscopy studies indicated a defect density in excess of 1011 cm−2 at the InSb/GaAs interface which decreased to 4.0×109 cm−2 at a distance of 0.3 μm from the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343112
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  • 6
    Electronic Resource
    Electronic Resource
    Forces in finite-element magnetostatics using co-energy related estimation of field accuracy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3363-3365 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Accuracy and consistency problems are often encountered when magnetostatic forces are estimated from imperfect finite-element solutions. Recently, these difficulties were attributed to localized field-error fluctuations characteristic of the co-energy extremization commonly used to solve finite-element systems. In this paper, a new scheme for finite-element based magnetostatic force calculation is introduced. The approach is based on the integration of a generalized Lorentz force density guided by a co-energy related field accuracy measure. Preliminary numerical results show that the co-energy based field assessment is a precise and stable measure for rating force integration regions. By extending the Lorentz force integration to the Maxwell stress method, the co-energy based field-error criterion is shown to be equally useful for evaluating integration surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340783
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  • 7
    Electronic Resource
    Electronic Resource
    Photoelectron spectra of amorphous SixHy alloy films: The effect of microstructure on the Si-2p level shift (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2530-2535 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depending on the deposition conditions, amorphous SixHy alloy films prepared by planar rf reactive magnetron sputtering exhibit one of three types of microstructure: (i) type A with no discernible microstructural features down to the 20-A(ring) level and with a smooth uniform density; (ii) type B consisting of high-density regions of 50–200-A(ring) lateral dimensions separated by a low-density network; and (iii) a two-level (type C) microstructure consisting of 300–500-A(ring) dimensions columns separated by a pronounced low-density network. The columns, in turn, are composed of 50–200-A(ring) dimension high-density regions interspersed with low-density network. The Si-2p level in these alloy films, determined by x-ray photoelectron spectroscopy, is observed to be strongly influenced by the microstructure of the film. A shift in the Si-2p level, systematically varying with the hydrogen concentration, is observed in alloy films with type B and type C microstructures. No shift is observed, irrespective of the hydrogen concentration, in alloy films with type A microstructure. The photoelectron spectra are examined in the light of the vibrational spectra of the films as measured by Fourier transform infrared techniques. The dependence of the Si-2p level shift on the microstructure and the variation with hydrogen concentration are explained qualitatively in terms of the differences in the silicon–hydrogen bonding in amorphous SixHy films with dissimilar microstructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337116
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  • 8
    Electronic Resource
    Electronic Resource
    Nature of photoconductivity in amorphous SixHy alloy films prepared by planar rf magnetron sputtering (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3160-3168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SixHy alloy films have been prepared by planar rf reactive magnetron sputtering with a wide range of electrical, optical, optoelectronic, and microstructural characteristics. The photoconductivity of the films is observed to depend sensitively on the microstructure. In particular, the interrelationship between the dark conductivity (σdark), the photoconductivity (σph), the photoconducting gain (σph/ σdark), and the optical band gap (Eg) of a film is strongly influenced by the microstructure. It is shown that films with a particular combination of σdark, σph, σph/ σdark, and Eg values can only be prepared with a specific type of microstructure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336896
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  • 9
    Electronic Resource
    Electronic Resource
    Experimental apparatus for measuring noise in MOSFETs on silicon wafers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 955-959 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present an apparatus for measuring noise in MOSFETs on silicon wafers. The system can measure noise accurately down to 10 nV/Hz1/2 and has a useful bandwidth of 0.01 Hz to 30 kHz. The drain current, source voltage, gate voltage, and the temperature (77 to 400 K) are computer controlled. We have designed a chip with both N and P channel test transistors in a range of sizes and geometries. The chip also includes a diode for temperature measurement. The wafers are processed in a controlled industrial environment giving reproducible device characteristics. Schematics for an ADC-DAC high-performance card offering many programmable features are also presented. A very-low-noise preamplifier working at liquid-nitrogen temperature is also described. The system is not restricted to measuring MOS transistors; any passive or active device can be measured making only simple changes to the bias circuitry. We also present results obtained with a typical MOSFET.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139757
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  • 10
    Electronic Resource
    Electronic Resource
    End-group effects on the wavelength dependence of laser-induced photodegradation in bisphenol-A polycarbonate (1986)
    s.l. : American Chemical Society
    Macromolecules 19 (1986), S. 2810-2825 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00165a026
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