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  • 1
    Electronic Resource
    Electronic Resource
    Acute and long-term effects of low-density lipoprotein apheresis on the serum concentrations of vitamins E and A (1988)
    Springer
    Journal of molecular medicine 66 (1988), S. 123-128 
    Details
    ISSN: 1432-1440
    Keywords: LDL apheresis ; Vitamin E ; Vitamin A ; α-Tocopherol ; Retinol
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Serum α-tocopherol and retinol concentrations were followed in four heterozygous adults and one homozygous child with familial hypercholesterolemia being treated by regular low-density lipoprotein (LDL) apheresis. Approximately 50% of plasma α-tocopherol was eliminated during a single apheresis procedure in the heterozygous adults, while a complete elimination of this vitamin along with LDLs was observed in the homozygous child. Absolute losses of α-tocopherol amounted to 13.4–22.5 mg/apheresis and are equivalent to the recommended dietary intake for 1.5 to 2 days. Despite these losses, no changes were observed either in serum α-tocopherol levels or in the ratio of α-tocopherol/total serum lipids after 12 months regular apheresis treatment. Serum retinol concentrations only showed a small decrease on apheresis, there being apparently no specific elimination of this vitamin. The absolute losses ranged from 42–422 µg/apheresis and were, therefore, much lower than the recommended dietary intake of the equivalent of 1500 µg retinol/day. It is concluded that no extra supplementation of these vitamins is required during LDL-apheresis therapy, although it may be advisable to monitor vitamin E status in patients on long-term, intensive therapy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01774226
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Lattice imaging study of in-depth disordering of Si-implanted GaAs (1988)
    Springer
    Applied physics 46 (1988), S. 185-190 
    Details
    ISSN: 1432-0630
    Keywords: 61.16Di ; 61.70Br ; 61.80Lj
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Cross-sectional high resolution transmission electron microscopy has been used to obtain direct information on the in-depth radiation damage distribution of weakly damaged GaAs by Si-ion implantation. A comparison is made between the experimental data and the calculated (using TRIM computer simulations) deposited energy by nuclear stopping for the same conditions. In particular a diffusion zone, with 200–300 Å width, of high point defect concentration beyond the damage peak is detected. These point defects are interpreted as As interstitials. By direct observation, information concerning the damage- and radiation-enhanced diffusion in implanted III–V compound semiconductors is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00939262
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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