Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 987-989
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass transport limited in the temperature range of 420–580 °C. It is kinetic controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101697
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