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  • 1985-1989  (6)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1713-1719 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm2, respectively. This result is achieved by the introduction of H2 into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ΔEc is estimated to be 0.43 of the band-gap difference ΔEg. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 °C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is achieved for the first time. The lasing wavelength is 658 nm with a threshold current density of 7.6 kA/cm2. cw operation is also achieved in the MQW laser diodes at −125 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338067
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Improvements of electrical and optical properties of InAlAs grown by molecular beam epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3262-3264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Great improvement in the electrical and optical properties of molecular-beam-epitaxy-grown InAlAs was obtained by using InP buffer layers and high substrate temperatures of 555 °C. Undoped InAlAs layers are n type and the highest room temperature electron mobility is as high as 5100 cm2/V s with a carrier concentration of 1×1015 cm−3. The room-temperature photoluminescence spectrum has a sharp edge emission with a spectral half-width as narrow as 42 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335785
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Raman scattering in InGaAlP layers grown by molecular-beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 5007-5011 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering from InGaAlP layers on (100) GaAs substrates grown by molecular-beam epitaxy (MBE) is studied. Compositional dependencies of Raman shifts show two-mode behavior for InAlP and partial three-mode behavior for InGaAlP. The empirical expressions for the compositional variations of LO and TO phonon frequencies are presented. Enhancement of the Raman peak intensities for AlP- and InP-like LO phonons is observed for the composition range when the direct band-gap E0 is close to the photon energy of the excitation light source. The ratio of valley depth to InP-like LO phonon peak height in the Raman spectrum of InGaP ranges from about 0.5 to 0.43, and correlates with the room-temperature photoluminescence peak energy (1.9–1.88 eV). The relationship between these is the same as for the metalorganic vapor-phase epitaxy (MOVPE) samples, although the depth-to-peak height ratios for the MBE samples coincide with the higher side values. The growth temperature dependence is also observed. These results indicate that the InGaP layers grown under the appropriate MBE-growth conditions show the ordered state, although the degree of the order is low. The InAlP layers show Raman spectra having well-resolved InP-like LO and TO phonon peaks. This differs from most of the reported results for MOVPE-grown InAlP layers, and suggests that the MBE-grown InAlP layers are very close to the disordered state alloy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343173
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Refractive indices of In0.49Ga0.51−xAlxP lattice matched to GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 985-986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The refractive indices of In0.49Ga0.51P, In0.49Al0.51P, and In0.49Ga0.29Al0.22P, lattice matched to GaAs grown by molecular-beam epitaxy, are determined from double-beam reflectance measurements for photon energies ranging from 0.6 to 1.3 eV. Variation of the In0.49Ga0.51−xAlxP, refractive index with Al composition x and photon energy is calculated according to the single-effective-oscillator model. These analytical results are then compared with experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336581
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  • 5
    Electronic Resource
    Electronic Resource
    Zn-diffusion-induced intermixing of InGaAs/InP multiple quantum well structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1383-1385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intermixing process of InGaAs/InP multiple quantum well structures by Zn diffusion at 550 °C is investigated. Secondary ion mass spectroscopy and x-ray analysis reveal that Zn diffusion induces the intermixing of group III atoms, but has little effect on group V profiles. However, resulting group III atom profiles are not completely uniform even after Zn diffusion. These results suggest that large lattice mismatch suppresses the intermixing process by Zn diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99123
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  • 6
    Electronic Resource
    Electronic Resource
    Impact ionization rates in an InGaAs/InAlAs superlattice (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 993-995 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An In0.53Ga0.47As/In0.52Al0.48As superlattice avalanche photodiode is fabricated by molecular beam epitaxy, and ionization rates are measured. The electron ionization rate is enhanced by a factor of 20 over hole ionization rate. This is the first time that such a remarkable increase has been observed for a superlattice. The increase is attributed to the large conduction-band offset.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101699
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    Paper (German National Licenses)
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