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  • 1985-1989  (11)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    The characterization of indium desorbed Si surfaces for low temperature surface cleaning in Si molecular beam epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1854-1859 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate the feasibility of using indium to replace Ga as an agent for silicon surface cleaning at lower substrate temperature in ultrahigh vacuum, we have examined the in-diffusion of indium and the surface defects introduced into silicon for various indium desorption processes. TEM, SEM, AES, SIMS, EDAX, and DLTS, as well as spreading resistance measurements, were used to characterize the samples. For the dynamic desorption case, which simulated the actual cleaning procedure, no significant surface defects were identified, nor was there any indium in the near surface region of the silicon substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336014
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Noise spectroscopy of deep level (DX) centers in GaAs-AlxGa1−xAs heterostructures (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1541-1548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the generation-recombination noise from the donor-related DX centers in current biased GaAs/AlxGa1−xAs heterostructures from 1 Hz to 25 kHz and from 77 to 330 K. A significant noise contribution from these traps is observed even at Al mole fractions below 0.2, where the trap level is resonant with the conduction band. The activated behavior of the noise spectrum from this resonant level is very similar to that observed at higher Al mole fractions, when the level lies deep in the fundamental gap. This result can be predicted, based on the recently elucidated relationship of the trap level to the band structure of AlxGa1−xAs. In accordance with other experimental results, the noise spectra demonstrate that the emission and capture kinetics of the level are unperturbed by its resonance with the conduction band. We briefly discuss some implications of these results for heterostructure transistor design.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339938
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    DX centers in AlGaAs p-n heterojunctions and heterojunction bipolar transistors (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3234-3236 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: DX centers are found to cause the capacitance of an AlGaAs/GaAs p-n heterojunction at 77 K to behave like that of a p-i-n diode. Exposure to light causes the capacitance to behave like a normal p-n junction. It is argued that the presence of DX centers has only a small effect on the switching properties heterojunction bipolar transistors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339326
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Barrier heights and electrical properties of intimate metal-AlGaAs junctions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1516-1522 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the Schottky barrier height of Mo-n:AlGaAs junctions, fabricated in situ by molecular beam epitaxy, on the Al mole fraction (x) was determined by internal photoemission measurements and by activation energy plots of the current versus voltage dependence on temperature. Both techniques yielded similar values. The difference in barrier height of Mo-AlGaAs as a function of x, compared to that of Mo-GaAs, was found to be equal to the conduction band discontinuity in AlGaAs-GaAs heterojunctions for Al concentrations in the range 0≤x≤0.4. For x〉0.4, values of the barrier heights were somewhat lower than values of the band discontinuity; however, both dependencies on x were quite similar. The temperature dependence of the current-voltage characteristics showed that thermionic emission was the dominant transport mechanism at forward bias for temperatures higher than 250 K. At lower temperatures, current transport was governed by thermionic field emission.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338085
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Deep electron traps in GaAs/n-AlxGa1−xAs single-quantum wells (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2408-2414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level-transient spectroscopy on molecular-beam epitaxially grown square GaAs/ n-AlxGa1−x As (x=0.24–0.39) single-quantum wells shows a series of electron traps in the AlGaAs with energies EC−ET at 0.12, 0.22, 0.29, 0.52, and 0.63 eV and with concentrations of about 5×1015 cm−3. The defects are located in the upper AlGaAs layer near the GaAs well layer. The trap concentrations and the widths of the spatial trap distributions (typically 15 nm) are independent of the well width. For all traps, a nonexponential capture process which is logarithmic in time is observed. Time-dependent depth profiling shows a virtual shift of the trap distribution to the surface for shorter filling pulses. Both effects are due to the nonabrupt depletion edge (Debye tail). No direct emission from the quantum wells is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341674
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  • 6
    Electronic Resource
    Electronic Resource
    Transient capacitance study of electron traps in AlGaAs grown with As2 (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1928-1931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using transient capacitance spectroscopy we have investigated the effect of growth by molecular-beam epitaxy (MBE) with dimeric As on the concentrations of deep traps in n-type AlGaAs with the Al mole fraction varying from x=0.04 to x=0.36. The substrate temperature dependence of E(0.77), which is the dominant trap in samples with x=0.25 grown at low substrate temperature, is similar for both As2 and As4 and is independent of Al mole fraction for the range investigated. For samples with Al mole fraction greater than 25% the dominant deep traps are the so-called D-X centers. The effect of using As2 is negligible compared to the effects of temperature and Al mole fraction which control the concentrations of the dominant deep traps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334426
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  • 7
    Electronic Resource
    Electronic Resource
    Properties of high-purity AlxGa1−xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 632-643 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metalorganic vapor-phase epitaxy (MOVPE) of AlxGa1−xAs most commonly employs the methyl precursors Al(CH3)3 and Ga(CH3)3. These precursors were used in the growth of AlxGa1−xAs over the entire range of alloy composition in a low-pressure horizontal MOVPE reactor. A complete chemical, electrical, and optical characterization of high-purity MOVPE AlxGa1−xAs grown over the entire range of growth temperatures (600–800 °C) was carried out in order to determine the relationship of the materials properties to the growth conditions. Carbon, the primary impurity in the layers, dominates the electrical properties of the epitaxial layers. A superlinear dependence of carbon incorporation on AlAs mole fraction is observed, along with a two-slope dependence on growth temperature. Photoluminescence spectra (2 K) were obtained from materials with AlAs mole fraction over the range 0≤x≤0.80. The photoluminescence intensity of the layers also exhibits a systematic dependence on alloy composition and growth temperature. The in situ gettering of oxygen by the growth reactants is necessary to achieve high luminescence intensity and low electrical compensation. The influence of the reactor design on this gettering process is modeled.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339792
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    The capture barrier of the DX center in Si-doped AlxGa1−xAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4786-4797 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the capture barrier for the DX center in Si-doped AlxGa1−xAs as a function of the alloy composition. A model of the capture process which requires a distribution of capture barrier heights has been fit to the data for samples with x=0.35. A simple technique is used to extract the average capture barrier height from data for samples with AlAs mole fraction ranging from x=0.27 to x=0.55. The barrier height varies strongly with the composition and has a minimum at x=0.35. The implications of these results are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338981
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1−xAs of low Al content (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2546-2548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements by deep level transient spectroscopy of electron emission from the deep donor level (DX center) in Si-doped GaAs and AlxGa1−xAs of very low Al content. For the first time, discrete emission rates corresponding to different local configurations of Ga and Al atoms around the Si donor are resolved. The large change in emission kinetics previously observed between GaAs and AlxGa1−xAs (x≥0.14) is thus shown to arise from the local alloy disorder which is absent in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100203
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  • 10
    Electronic Resource
    Electronic Resource
    Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1442-1444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two infrared local vibrational mode (LVM) absorption lines occurring at 715 and 845 cm−1 shift to 679 and 802 cm−1 in gallium arsenide doped with 18O, proving that the lines arise from the vibrations of oxygen impurities. The 715 cm−1 line exhibits a triplet 69,71Ga isotope fine structure consistent with that expected from a quasi-substitional VAs-O center. The 845 cm−1 line appears as a closely spaced doublet expected for a bonded interstitial oxygen atom.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100691
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