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  • 1
    Electronic Resource
    Electronic Resource
    Three wave mixing using a fiber ring resonator (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1055-1062 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three wave mixing using a fiber ring resonator scheme is discussed, and experimental results are presented. In this scheme, an optical nonlinear medium is placed into the fiber ring laser cavity, and a semiconductor optical amplifier and a tunable optical band pass filter (TOBPF) are used as the gain medium and lasing wavelength selector. The phase-matching condition, which is necessary for efficient wave mixing, can easily be satisfied by tuning the TOBPF. Second-harmonic generation (SHG) and sum-frequency generation (SFG) were demonstrated using a LiNbO3 waveguide with a periodically domain inverted structure. Enhancements of SHG and SFG were achieved. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363887
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  • 2
    Electronic Resource
    Electronic Resource
    Inelastic light scattering from heavily doped and highly compensated GaAs:Si (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2382-2386 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first-order Raman scattering from heavily doped and highly compensated GaAs:Si has been measured with a constant impurity concentration of 1.1 × 1019 cm−3. The damped q=0 L− and L+ branches due to the compensation-limited low mobilities have been observed. The impurity-induced forbidden mode which had been found in uncompensated p-GaAs:Zn has not appeared in the measured spectra. The line-broadening of plasmon-coupled LO phonon, L(q), and line and peak shift of TO phonon line are attributed to the impurity-induced Fröhlich interaction and the self-energy effect, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336338
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  • 3
    Electronic Resource
    Electronic Resource
    High-power InGaAs-GaAs strained quantum well lasers with InGaP cladding layers on p-type GaAs substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3212-3214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report device results from channel guide InGaAs-GaAs strained quantum well lasers with In0.49Ga0.51P cladding layers (λL = 980 nm). Channel guide lasers are demonstrated with a new current blocking scheme using a p-n-p InGaP junction on a p+-GaAs substrate. The laser structure is grown by metalorganic vapor phase epitaxy on the channeled n-InGaP layer. The reverse biased p-n-p InGaP junction is shown to be effective in preserving the current blocking properties for InGaAs-GaAs-InGaP lasers. The uncoated lasers show cw laser thresholds of 11 mA at RT and high output powers of 125 mW.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351437
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  • 4
    Electronic Resource
    Electronic Resource
    Automatic quasiphase matching for second-harmonic generation in a periodically poled LiNbO3 waveguide (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 22-27 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique is proposed and experimentally demonstrated to achieve a quasiphase matching (QPM) condition for second-harmonic generation (SHG) in a nonlinear optical waveguide with a periodically poled LiNbO3 waveguide. The fundamental wave satisfying the QPM conditions is automatically generated when the laser diode (LD) and the optical waveguide are optically connected. Using the proton-exchanged LiNbO3 waveguide with a periodically poled grating, which was fabricated by Ti diffusion and the InP/InGaAsP LD with antireflection-coated facets, it was confirmed that the LD oscillated at the wavelength satisfying the QPM condition, and SHG was observed simultaneously. Using a Ti:sapphire laser, it was also confirmed that the SHG was realized at the third order of QPM condition, as was expected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350748
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  • 5
    Electronic Resource
    Electronic Resource
    High-power 1.48 μm multiple quantum well lasers with strained quaternary wells entirely grown by metalorganic vapor phase epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2220-2222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes 1.48 μm multiple quantum well (MQW) lasers with strained GaInAsP quaternary wells entirely grown by metalorgainic vapor phase epitaxy. The GaInAsP quaternary layers with 1.5% biaxially compressed strain showed an excellent crystal quality and an abrupt interface within half-monolayer fluctuations which was verified with photoluminescence spectroscopy. The maximum continuous wave output power of 140 mW was obtained at 20 °C with 1500-μm-long lasers whose facets were coated by anti- and high-reflection films. The small internal loss of 12 cm−1 and a high internal efficiency of 70% were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104932
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  • 6
    Electronic Resource
    Electronic Resource
    Second-harmonic generation device with integrated periodically domain-inverted regions and distributed Bragg reflector in a LiNbO3 channel waveguide (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1934-1936 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a new structure of LiNbO3 guided wave second-harmonic generation device, in which the fundamental light beam is sufficiently confined by two distributed Bragg reflectors (DBRs) formed at input and output ports. The 40% increase in the conversion compared with a conventional device without DBR was achieved under a quasi-phase matching condition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105050
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  • 7
    Electronic Resource
    Electronic Resource
    Excited-state spectroscopy of identified Mg acceptor in InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 349-351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence experiments under resonant excitation have been performed at low temperature in Mg+-implanted bulk InP. The energy difference between the ground 1S3/2 and excited 2S3/2 states of the Mg acceptor is accurately measured by two-hole spectroscopy of Mg-acceptor bound exciton. Selective excitation of donor-acceptor pairs luminescence allows the identification of a set of 2P3/2 and 2P5/2 excited states. The measured values to be compared with similar published data obtained for Zn and C represent an additional step in the process of accurate identification of acceptors in InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102781
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of GaAs grown dilutely doped with Si by molecular beam epitaxy with modulated source supplies (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1862-1864 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers grown dilutely doped with Si by molecular beam epitaxy (MBE) with modulated-source supplies have been characterized using low-temperature photoluminescence. Free- and bound-exciton emissions were observed in the near-band-edge region of photoluminescence spectra. A change in the spectral features of impurity-related emissions was induced by varying the modulation of the Si molecular beam in the MBE growth. It is found that the Si atoms are incorporated as either donors or acceptors, according to the timing of the Si supply during the As-source supply in MBE growth. We achieved Si doping on addressed sites by varying the timing of the Si supply.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102169
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of InGaAs/GaAs quantum well microcavity light-emitting diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3598-3600 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a systematic investigation of the emission properties of semiconductor microcavity light-emitting diodes (MC-LEDs) with different cavity detuning. Evidence that varying the cavity detuning leads to temperature insensitive output characteristics is provided by changes in the temperature dependence of the slope efficiency extracted from the light output versus current characteristics. For resonantly tuned devices the slope efficiency decreases monotonically with increasing temperature. However when the cavity peak is detuned to long wavelength with respect to the room temperature quantum well (QW) emission, temperature insensitive characteristics are achieved. Compared to a noncavity type LED, enhanced efficiency and narrow spectral linewidth have been observed for the MC-LEDs with the highest output efficiency achieved when the QW emission and cavity peak are exact resonant. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123193
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  • 10
    Electronic Resource
    Electronic Resource
    Temperature and polarization dependence of LiNbO3 quasiphase-matched wavelength converters (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1933-1935 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature and polarization characteristics of 1.55-μm-band LiNbO3 quasiphase-matched (QPM) wavelength converters have been studied by second-harmonic generation (SHG). It is found that the shift of the QPM wavelength is linearly proportional to temperature over the measured temperature range between 10 and 40 °C, with a temperature tolerance (corresponding to a 3 dB reduction in the QPM conversion efficiency) of greater than 10 °C for a 10-mm-long device. With respect to the angle θ of the injected fundamental light polarization direction, the SHG power changes as a function of sin4 θ, with a tolerance of over 60°. Theoretical explanations for the observed results are also presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123732
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