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  • 1
    Electronic Resource
    Electronic Resource
    Effect of heat treatment on the state of Si impurity in GaAs studied with the photoluminescence technique (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3035-3040 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of heat treatment of Si-doped GaAs was investigated with photoluminescence (PL) measurement. The dependence of PL spectra on the carrier concentration due to Si shows that the PL lines in the wavelength range between 950 and 1500 nm are classified into two types depending on whether the carrier concentration is lower or higher than approximately 7×1017 cm−3. There is also a similar behavior for PL spectra in the bound exciton wavelength region between 800 and 950 nm. The characteristic carrier concentration is about 6×1017 cm−3, and is related to the onset of overlap between wavefunctions of excitons bound to Si impurity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353010
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  • 2
    Electronic Resource
    Electronic Resource
    Optical studies of heat-treated Si-doped GaAs bulk crystals (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1618-1624 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of heat treatments on optical properties of Si-doped GaAs was investigated. Special care was taken to avoid the evaporation of As during heat treatment. Several kinds of photoluminescence peaks were found to be developed, depending on the Si concentration of the crystal and the temperature of the heat treatment. In crystals of high concentrations of Si a broad photoluminescence peak centered at about 1040 nm in wavelength was observed. The intensity and position of the peak were found to depend on the temperature of the heat treatment for a crystal in which the Si concentration was higher than 3.8×1018 atoms/cm3. The change in the peak position was accompanied by the changes in the optical absorptions related to SiGa-SiAs and SiAs-VGa pairs and also by the change in the concentration of free electrons. The characteristics of the observations were well interpreted with the idea that the photoluminescence peak was related to clusters of Si atoms and that clustering of Si atoms took place during heat treatment. Such clustering of Si atoms did not take place appreciably in a crystal of a Si concentration lower than 3.0×1018 atoms/cm3. The origins of other photoluminescence peaks related to shallow levels were identified, while those related to deep levels are not known at the present moment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347258
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  • 3
    Electronic Resource
    Electronic Resource
    High-field, high-pressure, and low-temperature magneto-optical apparatus using a diamond anvil cell (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5764-5766 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An optical system equipped with a diamond anvil cell is constructed for studying the optical properties of materials under the simultaneous conditions of high magnetic field, high pressure, and low temperature. As an application of this apparatus, the magnetophotoluminescence due to the exciton state in Cd0.9Mn0.1Se is measured at 4.2 K under 1.25 GPa in the presence of magnetic fields up to 23 T.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143840
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  • 4
    Electronic Resource
    Electronic Resource
    Excitation spectra of 1200 and 1320 nm photoluminescence lines in annealed gallium arsenide doped with silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1164-1168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitation spectra have been measured at various temperatures for the intense luminescence lines at 1200 and 1320 nm which are observed in samples of Si-doped GaAs annealed at 900 and 500 °C, respectively. The excitation spectra of the 1200 nm line at 6 K has a sharp peak at 1.490 eV followed by a broad background component on the lower-energy side. This peak corresponds to the electronic excitation of donor (Si at Ga atom site) -acceptor (Si at As atom site) pairs in the crystal. The excitation spectra of the 1320 nm line at 6 K shows two peaks at 1.49 and 1.39 eV. The experimental results show clearly that the creation of donor-acceptor pairs in the above Si impurity complex is the major process of electronic excitation which leads to the intense luminescence at longer wavelengths such as 1200 and 1320 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357840
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  • 5
    Electronic Resource
    Electronic Resource
    Surface structure of 3C-SiC(111) grown on Si(111) surface by C60 precursor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1253-1255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface structure of cubic 3C-SiC(111) films prepared by thermal reaction of a Si(111) substrate with C60 molecules has been studied by combined in situ measurements of scanning tunneling microscopy and high resolution electron energy loss spectroscopy (HREELS-STM). The (2×n) surface reconstructions such as (2×2), (2×3) were observed under low reaction temperatures (≤900 °C), and the Si-terminated SiC(111)-(3×3) was obtained by annealing the sample at higher temperatures (∼1100 °C). Optical surface phonon energies of 113±2 meV for SiC prepared at low temperatures and 116±2 meV for the films with (3×3) surface reconstruction were measured. The diffusivity of Si atoms from the substrate through the SiC film at various temperatures is suggested as the reason for the formation of different surface reconstructions of the SiC. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115943
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  • 6
    Electronic Resource
    Electronic Resource
    Relative Intensity of X-ray Lines (1926)
    [s.l.] : Nature Publishing Group
    Nature 117 (1926), S. 120-121 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] THE development of the theory of atomic constitution has made measurements of the intensity of lines in X-ray spectra very important. Estimates of relative intensities of X-ray lines have hitherto been attempted by means either of the ionisation chamber or the photographic plate. Owing, ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/117120a0
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  • 7
    Electronic Resource
    Electronic Resource
    The Scattering of Light by Free Electrons according to Dirac's New Relativistic Dynamics (1928)
    [s.l.] : Nature Publishing Group
    Nature 122 (1928), S. 398-399 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] DIRAC and Gordon have given a quantum-dynamical treatment of the problem of the scattering of light by free electrons which seems to be in good agreement with experimental results. Since the development due to Dirac of a more rational relativistic dynamics of the electron, which automatically ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/122398b0
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  • 8
    Electronic Resource
    Electronic Resource
    Interband Faraday rotation and Voigt effect in Ge
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 30 (1969), S. 739-747 
    Details
    ISSN: 0022-3697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-3697(69)90028-6
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  • 9
    Electronic Resource
    Electronic Resource
    Carbon nanocapsules encaging metals and carbides
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 54 (1993), S. 1849-1860 
    Details
    ISSN: 0022-3697
    Keywords: Carbon ; cobalt ; fullerene ; iron ; lanthamide ; nanocapsule ; nanotube ; nickel
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-3697(93)90298-6
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  • 10
    Electronic Resource
    Electronic Resource
    Cosmic Ray Intensities and Cyclones (1940)
    [s.l.] : Nature Publishing Group
    Nature 145 (1940), S. 703-704 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] IN a recent note1, we have pointed out that cosmic ray intensities in Japan show a noticeable change under different air mass conditions. In this letter we should like to direct attention to the effect of cyclones on cosmic ray intensities. The cyclonic structure, after the ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/145703a0
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