Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 1164-1168
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Excitation spectra have been measured at various temperatures for the intense luminescence lines at 1200 and 1320 nm which are observed in samples of Si-doped GaAs annealed at 900 and 500 °C, respectively. The excitation spectra of the 1200 nm line at 6 K has a sharp peak at 1.490 eV followed by a broad background component on the lower-energy side. This peak corresponds to the electronic excitation of donor (Si at Ga atom site) -acceptor (Si at As atom site) pairs in the crystal. The excitation spectra of the 1320 nm line at 6 K shows two peaks at 1.49 and 1.39 eV. The experimental results show clearly that the creation of donor-acceptor pairs in the above Si impurity complex is the major process of electronic excitation which leads to the intense luminescence at longer wavelengths such as 1200 and 1320 nm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357840
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