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  • Conductivity phenomena in semiconductors and insulators  (2)
  • cerebral vasospasm  (2)
  • α-muricholic acid  (2)
  • 7α-hydroxy-cholesterol  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Difference between cholic acid and chenodeoxycholic acid in dependence upon cholesterol of hepatic and plasmatic sources as the precursor in rats
    Amsterdam : Elsevier
    Steroids 41 (1983), S. 509-520 
    Details
    ISSN: 0039-128X
    Keywords: 3,7,12-trioxo-5β-cholan-24-oic acid ; 3α, 7α,12α-trihydroxy-5β-cholan-24-oic acid ; 3α,6β,7α-trihydroxy-5β-cholan-24-oic acid ; 3α,6β,7β-tri-hydroxy-5β-cholan-24-oic acid ; 3α,7α-dihydroxy-5β-cholan-24-oic acid ; 5-cholesten-3β-ol ; chenodeoxy-cholic acid ; cholesterol ; cholic acid ; dehydrocholic acid ; α-muricholic acid ; β-muricholic acid
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0039-128X(83)90091-0
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Role of endogenous and exogenous cholesterol in liver as the precursor for bile acids in rats
    Amsterdam : Elsevier
    Steroids 38 (1981), S. 495-509 
    Details
    ISSN: 0039-128X
    Keywords: 3α,12α-dihydroxy-5β-cholan-24-oic acid ; 3α,6β,7α-trihydroxy-5β-cholan-24-oic acid ; 3α,6β,7β-trihydroxy-5β-cholan-24-oic acid ; 3α,7α,12α-trihydroxy-5β-cholan-24-oic acid ; 3α,7α-dihydroxy-5β-cholan-24-oic acid ; 5-cholesten-3β-ol ; 5-cholestene-3β,7α-diol ; 7α-hydroxy-cholesterol ; chenodeoxycholic acid ; cholesterol ; cholic acid ; deoxycholic acid ; sB-muricholic acid ; α-muricholic acid
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0039-128X(81)90050-7
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of CuIn5S8 single crystals (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1875-1879 
    Details
    ISSN: 0392-6737
    Keywords: Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Molte proprietà ottiche e di trasporto sono state studiate sui cristalli singoli di tipon di CuIn5S8. Si è determinato che il gap di energia a 0 K dalle misurazioni elettriche è 1.4 eV. Si è trovata un'anisotropia dell'effetto di magnetoresistenza e si è suggerito che i minimi della banda di conduzione siano situati in punti lungo le direzioni [100] nello spaziok. Si è trovata una banda di assorbimento ottico in una regione dell'infrarosso di (1÷1.6) μm, che è state attribuita alle transizioni delle piú basse bande di conduzione situate lungo le direzioni [100] a una piú alta banda di conduzione.
    Abstract: Резюме Исследуются некоторые транспортные и оптические свойства монокристаллов CuIn5S8 n-типа. Из электрических измерений определяется энергетическая щель при 0 К, которая составляет 1.4 эВ. Обнаружена анизотропия магниторезистивного эффекта. Предполагается, что минимумы зоны проводимости расположены в точках вдоль направления [100] вk-пространстве. Обнаружена оптическая зона поглощения в инфракрасной области (1÷1.6) мкм, которая связана с переходами из нижней зоны проводимости, расположенной вдоль направлений [100], В верхнюю зону проводимости.
    Notes: Summary Several transport and optical properties have been studied onn-type CuIn5S8 single crystals. The energy gap at 0 K was determined from the electrical measurements to be 1.4 eV. An anisotropy of the magnetoresistance effect was found and it was suggested that the minima of the conduction band were located at points along the [100] directions ink-space. An optical-absorption band was found in an infrared region of (1÷1.6) μm and was attributed to the transitions from the lowest conduction band situated along the [100] directions to an upper conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457879
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Vasoconstriction of external carotid arteries after rupture of intracranial aneurysms (1979)
    Springer
    Acta neurochirurgica 50 (1979), S. 281-287 
    Details
    ISSN: 0942-0940
    Keywords: Vasoconstriction ; aneurysm rupture ; cerebral vasospasm ; external carotid arteries
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Vasoconstriction of the external carotid arteries, which has not been previously reported, was investigated angiographically in 23 patients who had intracranial vasospasm after aneurysm rupture. In about 50% of these patients vasoconstrictive change in the external carotid arteries was also found. These changes were not seen in control cases without intracranial vasospasm. Pathogenesis of the vasoconstriction of the external carotid arteries was discussed with particular emphasis on the relationship with sympathetic nerves.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01808525
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    The use of computed tomography in the prediction of delayed cerebral infarction following acute aneurysm surgery for subarachnoid haemorrhage (1995)
    Springer
    Acta neurochirurgica 132 (1995), S. 9-13 
    Details
    ISSN: 0942-0940
    Keywords: Acute aneurysmal surgery ; cerebral infarction ; cerebral vasospasm ; computed tomography ; subarachnoid haemorrhage
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary In order to predict the occurrence of cerebral infarction after aneurysmal surgery in patients with subarachnoid haemorrhage, we measured the amount of subarachnoid blood on initial and on post-operative computed tomograms. We used a reliable grading method to estimate the amount of blood on computed tomograms in 24 patients with infarction due to vasospasm and 45 patients without cerebral infarction, all of whom underwent aneurysmal surgery within 48 hours after the ictus. The total amount of subarachnoid blood on admission and on the day after operation was more in the cerebral infarction group than in the non-infarction group. The clearance rate of subarachnoid blood by surgery was lower in patients with cerebral infarction than in patients without infarction and the predominant site of subarachnoid blood corresponded with the site of the infarct. Of 24 patients with cerebral infarction, 22 (92%) belonged to the group whose initial total blood score was more than 10 on admission and whose clearance rate by surgery was less than 50%. Therefore, we propose this range to be an indication for the occurrence of cerebral infarction in postoperative patients due to cerebral vasospasm. The presence of intracerebral haematoma and the amount of ventricular blood and their clearance by surgery were also estimated for the prediction of delayed cerebral infarction after aneurysmal surgery. However, they had no relation to the occurrence of cerebral infarction due to vasospasm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01404841
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetoresistance of CdIn2S4 single crystals (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1886-1890 
    Details
    ISSN: 0392-6737
    Keywords: Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto La resistenza magnetica è stata misurata in cristalli singoli di CdIn2S4 con concentrazioni di portatori diverse che variano da 4.3·1015 cm−3 a 8.5·1018 cm−3. I risultati indicano che il minimo della banda di conduzione del CdIn2S4 è situato ak=0.
    Abstract: Резюме Измеряется магниторезистивный эффект в монокристаллах CdIn2S4, имеющих различные концентрации носителей от 4.3·1015 см−3 до 8.5·1018 см−3. Полученные результаты указывают, что минимум зоны проводимости в CdIn2S4 приk=0.
    Notes: Summary Magnetoresistance was measured on CdIn2S4 single crystals having various carrier concentrations ranging from 4.3·1015 cm−3 to 8.5·1018 cm−3. The results indicate that the minimum of the conduction band of CdIn2S4 is located atk=0.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457881
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    Paper (German National Licenses)
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