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  • 1
    Electronic Resource
    Electronic Resource
    The fate of desmin and titin during the degeneration and regeneration of the soleus muscle of the rat (1992)
    Springer
    Acta neuropathologica 84 (1992), S. 278-288 
    Details
    ISSN: 1432-0533
    Keywords: Desmin ; Titin ; Muscle degeneration ; Muscle regeneration ; Snake venom
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary We studied the fate of desmin and titin in rat skeletal muscle during a cycle of degeneration and regeneration induced in vivo by the inoculation of a snake venom. Cryosections of muscle were labelled using antibodies to the two proteins, and examined at fixed time points after venom injection. Early pathological changes in the muscle, such as hypercontraction, preceded the loss of desmin. Immunolabelling using anti-desmin antibodies showed that desmin bridges were still intact when adjacent myofibrils were no longer aligned. The results suggested that although the hydrolysis of desmin is not necessary for the hypercontraction of muscle fibres, it probably contributes to complete fibre breakdown. Titin, or at least the part which lies close to the M-line, remained intact longer than desmin, but was also hydrolysed prior to complete disintegration of the fibres. Both desmin and titin were re-expressed in the regenerating myotubes by 2 days after venom inoculation, and became well organised even before the myofibrils became aligned. We conclude that desmin and titin are involved in both establishing and maintaining the structural integrity of the muscle fibres.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00227821
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    The fate of dystrophin during the degeneration and regeneration of the soleus muscle of the rat (1992)
    Springer
    Acta neuropathologica 83 (1992), S. 140-148 
    Details
    ISSN: 1432-0533
    Keywords: Dystrophin ; Muscle degeneration ; Muscle regeneration ; Snake venom
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Immunocytochemistry and Western blotting were used to monitor the fate of dystrophin in the soleus muscle of the rat during a cycle of degeneration and regeneration induced by inoculation of the muscle with the venom of Notechis scutatus scutatus (the Australian tiger snake). In control muscle dystrophin was localised close to the plasma membrane. Dystrophin began to break down 3–6 h after venom inoculation, giving a characteristic discontinuous labelling pattern. At 12 h dystrophin was absent from the plasma membrane, and by 1 day the architecture of the muscle fibres had completely broken down. By 2 days post inoculation regeneration had commenced. The regenerating myofibres possessed well-organised myofibrils and the plasma membrane was intact. Dystrophin was detected by Western blot at 3 days, but was not seen in sections until regeneration of the muscle was well advanced, at 4 days post inoculation. The results suggested that although dystrophin was present in the myofibres at 3 days, it was not incorporated into the plasma membrane until 4 days post inoculation. This may be due to the influence of the functional reinnervation of the regenerating fibres, which occurs at 4–5 days, or to the growing fibres reaching a critical diameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00308473
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Kinetic limitations to surface segregation during MBE growth of III–V compounds: Sn in GaAs (1984)
    Springer
    Applied physics 33 (1984), S. 87-92 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The incorporation of Sn as a dopant in GaAs has been studied in the temperature range of 500°–650° C, over a wide range of Ga and As fluxes, the latter being incident as either As4 or As2 molecules. The results are explained in terms of a surface segregation model in which the behaviour at high growth temperatures (above ∼600 °C) approaches thermal equilibrium, but growth at lower temperatures involves a kinetic limitation to the segregation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617613
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Nucleation effects during MBE growth of Sn-Doped GaAs (1982)
    Springer
    Applied physics 28 (1982), S. 63-71 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The morphology, structure and composition of Sn films on GaAs substrates have been investigated in relation to the predeposition technique used with Sn doping of MBE-grown GaAs films. It has been shown that 3-D aggregates of Sn are formed and a similar morphology has been identified in the Sn which accumulates at the surface of all Sn-doped GaAs films. The way in which this relates to donor incorporation is considered and a simple model of incorporation kinetics proposed which is shown to be consistent with observation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617784
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Silicon doping of MBE-grown GaAs films (1983)
    Springer
    Applied physics 32 (1983), S. 195-200 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Two concentration ranges of silicon doping in MBE-grown GaAs films have been investigated in some detail. In lightly doped films, with a free-electron concentration of ≈1016cm−3, low-temperature photoluminescence spectra have been analysed to develop a model to account for spectral features previously attributed to Ge and Si acceptor levels. In heavily doped films, a maximum free-electron concentration of ≈7×1018 cm−3 has been obtained, which is only rather weakly dependent on growth conditions and the nature of the arsenic species (As2 or As4). Transmission electron microscopy has shown that no significant precipitation effects occur when higher Si fluxes are used but there is evidence for autocompensation. The maximum PL intensity (300 K) is found at a lower free electron concentration then with Sn-doped films, and is more sharply peaked, but there is no evidence for an anomalous Moss-Burstein shift.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00820260
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    Paper (German National Licenses)
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