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  • 1
    Electronic Resource
    Electronic Resource
    Determination of transition rate constants of trans–cis isomerization in a poly(malonic ester) containing disperse red 1 (2002)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 117 (2002), S. 1677-1681 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We suggested a simple method for obtaining the quantitative transition rate constants of trans–cis isomerization in the pseudo-stilbene-type of azobenzene molecule. The absorbances of the solution and film of a poly(malonic ester) containing disperse red 1(PDR1) were measured with the pumping beam intensity, and analyzed by the rate equation for the fractions of trans and cis conformers. The rate constants of PDR1 solution and film were successfully determined. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1487825
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  • 2
    Electronic Resource
    Electronic Resource
    Some global properties and invariance of bundle metrics in the Kaluza–Klein scheme (1988)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 29 (1988), S. 2641-2652 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: It is shown that the transition functions that give the global structure of the fiber bundle play an important role in the construction of the metric. The invariance properties of this metric under general gauge transformations are discussed and it is found that the usual requirement of a gauge-invariant metric leads to severe constraints on the gauge fields. To avoid them, it is shown that the metric should instead be covariant with respect to these transformations. Moreover the existence of global actions that are essential in the context of the consistency problem is also discussed. The presence of such actions is studied in both the principal and their associated bundles. In the case of a homogeneous bundle with G/H as the typical fiber, it is shown that a "spliced'' bundle with G×N(H)/H as the structure group has to be used. The unified space is then taken as the bundle space of its associated bundle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528055
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  • 3
    Electronic Resource
    Electronic Resource
    The propagator in the generalized Aharonov–Bohm effect (1988)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 29 (1988), S. 1154-1157 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The nonrelativistic propagator is derived by formulating the generalized Aharonov–Bohm effect, valid for any gauge group in a general multiply connected manifold, as a gauge artifact in the universal covering space. The loop phase factors and the free homotopy propagators arise naturally. An explicit expression for the propagator when there are two solenoids present is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527957
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  • 4
    Electronic Resource
    Electronic Resource
    Nonabelian progressive waves (1985)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 26 (1985), S. 841-844 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: We present two families of nonabelian wave solutions of the Yang–Mills field equations, some of the previous known solutions occur as special cases of our solutions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.526576
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  • 5
    Electronic Resource
    Electronic Resource
    Analytic solutions of the SU(3) Yang–Mills field equations with external sources (1988)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 29 (1988), S. 220-223 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: For external sources specified in the radial gauge frame, it is demonstrated how the SU(3) Yang–Mills field configuration can be constructed from the SU(2) solutions. This is explicitly illustrated for the type-II solutions that exhibit the bifurcation phenomenon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528177
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  • 6
    Electronic Resource
    Electronic Resource
    A spectrum converter dye for enhancement of blue-green laser efficiency (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3414-3416 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to enhance the efficiency of a blue-green laser through spectrum conversion of the pumping light, a converter dye BBQ was mixed in the laser dye solutions. The laser was pumped with a plasma radiation source. The increase of laser output over the maximum obtainable from the pure dye operation was better than 80% for the dye mixture of LD490+BBQ or coumarin 503+BBQ. The estimated enhancement calculated by a simple spectrum conversion model agrees well with the experimental results. The enhancement is mainly effected by irradiance in the UV from the pumping source, the fairly good match of the fluorescence band of converter dye with the absorption band of the laser dye, and the lack of the overlap of the fluorescence band of the laser dyes with the triplet–triplet absorption band of the converter dye used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337639
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  • 7
    Electronic Resource
    Electronic Resource
    A new nuclear magnetic resonance imaging technique for unambiguous unidirectional measurement of flow velocity (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1256-1262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new nuclear magnetic resonance (NMR) flow-velocity-imaging method applied to the study of the fluid dynamics is introduced. In the proposed technique, a selection gradient is used for the phase encoding, and since the selection gradient is relatively small compared with the conventional gradient for phase encoding it allows the measurement of high-velocity flow. To obtain the phase-velocity relationship, the Bloch equation is solved numerically and establishes the quantitative phase-velocity relationship of the flow under the slice selection gradient and echo radio frequency pulse. The flow effect compensation in the directions other than the slice selection direction is achieved by applying additional flow coding gradients similar to the conventional flow phase coding. The experimental NMR flow images obtained with the new technique are compared with the velocity measurements made with a laser Doppler velocimeter, and are found to be in close agreement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337347
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  • 8
    Electronic Resource
    Electronic Resource
    Novel self-aligned W/TiN/TiSi2 contact structure for very shallow junctions and interconnections (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1672-1674 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes a novel structure for very large scale integrated contact and interconnect technology that involves selective deposition of W on self-aligned TiN/TiSi2. The TiN layer serves to protect reaction between WF6 and TiSi2 and underlying Si during W deposition as well as to promote adhesion of W layer and minimize contact resistance. The selective deposition of W on TiN, very difficult with conventional hydrogen reduction process, is accomplished by employing a recently developed silane reduction process. The structure prevents silicon consumption leading to the encroachment commonly found in tungsten deposited directly on silicon in very shallow junctions. It is demonstrated that such a structure results in low contact resistance and junction leakages and is applicable to subhalf-micron devices. Tungsten with low resistivity of 8–9 μΩ cm can be achieved at room temperature with the resulting drop by a factor of 3–4 at liquid-nitrogen temperature making the structure more attractive for low-temperature application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101300
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  • 9
    Electronic Resource
    Electronic Resource
    Bias-assisted photoelectrochemical oxidation of n-GaN in H2O (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1029-1031 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of gallium oxide on n-GaN was realized in H2O by bias-assisted photoelectrochemical (PEC) oxidation using Al as a counterelectrode instead of a Pt commonly used in the PEC process. Although the growth of the oxide was not observed at below 2 V, the initial oxide growth rate of 8.7 nm/min was shown at a bias of 15 V and ultraviolet light intensity of 300 mW/cm2. However, the growth rate lowered and oxide thickness was saturated to 340 nm. The saturated oxide thickness and initial growth rate were increased with the applied bias. The homogeneous oxide growth and near stoichiometric composition of Ga2O3 were observed in Auger electron spectroscopy analysis results. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498863
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  • 10
    Electronic Resource
    Electronic Resource
    Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2557-2559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent Hall effect measurements on unintentionally doped n-type GaN epilayers show that, above room temperature, the Hall-mobility values of different samples vary parallel with each other with temperature. We demonstrate that this anomaly is mainly due to a conductive layer near the GaN/sapphire interface for thin samples with low carrier density. Through trapping electrons, threading edge dislocations (TEDs) debilitate the epilayer contribution in a two-layer mixed conduction model involving the epilayer and the near-interface layer. The trapping may, in part, explain low mobility and anomalous transport in pure GaN layers. Scattering by TEDs is important only at low temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318728
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