Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 14 (1971), S. 952-957 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 26 (2004), S. 0 
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The ambivalent consequences of mitochondrial stimulation on cellular activity have been well established. Mitochondria supply the cell with energy through a process of oxidative phosphorylation but thereby generate free radicals, resulting in the accumulation of hydrogen peroxide in the cytoplasm. We have investigated the impact of cellular senescence as well as UV irradiation, on the balance between these two activities.The adenosine triphosphate (ATP) level, DNA and protein synthesis in fibroblasts obtained from donors between 30 and 90 years of age appeared to be significantly influenced by the aging process. Both DNA and protein synthesis could be stimulated by increasing intracellular ATP levels. In-vitro senescent fibroblasts showed a reduction in the level of ATP as well as a shift in mitochondrial membrane potential. At the same time, there was an increase in intracellular hydrogen peroxide with increasing population doubling, indicating a clear dysfunction of the metabolic machinery in the mitochondria of senescent cells. To counteract this degradation of the energy pool, we treated cells with creatine, which is known to restore the pool of phosphocreatine in the mitochondria. Creatine treatment significantly increased cell survival after UV exposure, stimulated the repair of UVB-induced DNA damage in keratinocytes and caused a significant reduction in the number of sunburn cells in a UVB-exposed reconstituted skin model. These results clearly indicate that restoration of the energy pool in mitochondria increased cellular self-defense mechanism. These data show the important role played by the mitochondrial energy metabolism on the aging process, and indicate a possible therapy that can be used to counteract this negative effect. Treatment with creatine seems to provide the necessary boost to the cellular metabolism, which leads to an induction of a significant amount of protection and repair to human skin cells.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5159-5169 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for fabricating controlled Schottky barrier heights to GaAs over the entire band gap is demonstrated. Thin, highly doped semiconductor layers at the metal-semiconductor interface allowed the reproducible control of the effective barrier height on n-type GaAs from near zero (i.e., ohmic behavior at 300 K) to 1.33 eV (the band gap equals 1.43 eV at 300 K) with diode ideality factors 1.02≤n≤1.21. Molecular-beam epitaxy was used to grow GaAs epitaxial layers with in situ deposited Al metal layers, resulting in diodes with nearly ideal electrical and structural characteristics. Electrical characterization by current-voltage (I-V) and capacitance-voltage (C-V) techniques, models for these I-V and C-V characteristics, and structural characterization by high resolution transmission electron microscopy lattice images are presented. Implications of this work for models of Schottky barrier formation are discussed, as well as some applications for these "engineered Schottky barrier diodes.''
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3563-3565 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare low-temperature, excimer-laser-induced etching of GaAs, GaSb, InAs, and InSb surfaces covered with 1–2 monolayers of condensed Cl2. The etch properties and a relative etch rate of GaAs∼GaSb〈InAs〈InSb are obtained. In addition, the etch rate of GaSb is characterized as a function of various system parameters, i.e., substrate temperature, chlorine pressure, and laser fluence. Spatially well resolved, anisotropic etching of 0.5 μm features has been achieved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 259-262 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used time-resolved reflection high energy electron diffraction (RHEED) measurements to study anion exchange reactions in molecular beam epitaxy (MBE) grown III-V semiconductors. In the experiment, InAs surfaces are exposed to Sbx fluxes and subsequent changes in the crystals RHEED patterns are examined. We find that when an InAs surface is initially exposed to an Sb flux the specular spot intensity first decreases, then recovers back toward its initial value. The shape of the intensity versus time curves is extremely reproducible if the absolute Sb flux and the Sb species are kept constant. The length of time required for the RHEED pattern to stabilize is much shorter for cracked Sb than for uncracked Sb. The RHEED dynamics are also faster if the total Sb flux increases. The behavior of the RHEED dynamics as a function of Sb flux and Sb species is consistent with the changes in the RHEED pattern being due to an Sb/As exchange reaction on the crystal's surface. The RHEED data are compared to previously published x-ray photoelectron spectroscopy (XPS) data which studied exchange reactions on InAs surfaces exposed to Sb fluxes. The XPS study confirmed that the incident Sb did indeed exchange with As in the epilayer and estimated the exposure time needed to complete the Sb/As exchange reaction. The time scales for exchange associated with the RHEED and XPS data are in good agreement. This further indicates that RHEED could be used to indirectly probe anion exchange reactions, potentially opening up several avenues of research ranging from basic materials science to MBE process control in manufacturing.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1673-1675 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental observation of room-temperature current gains as large as 50 in a novel transistor grown in the InAs/GaSb/AlSb material system. Due to the unique degree of flexibility this material system offers in choosing band alignments, the base and collector terminals are separated by a quantum barrier while electrons traveling between the emitter and collector terminals do not tunnel across any classically forbidden regions, even though a quasi-bound state exists in the quantum well collector. This asymmetry in current conduction between the terminals of the device leads to transistor action: applying a bias to the base terminal electrostatically modulates the emitter-collector current through Stark shifts of the energy levels in the quantum well collector, while the quantum barrier between the base and collector terminals suppresses the base current. Because transport through the structure is dependent on resonant transmission, this novel transistor holds promise for the fabrication of high-speed circuits.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2675-2677 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a theoretical and experimental analysis of current transport in InAs/GaSb/InAs interband tunneling devices as a function of GaSb layer width. Our results demonstrate that current transport in these devices occurs not through simple ohmic conduction, as had been previously proposed, but via light-hole-like resonances in the GaSb valence band formed due to the imperfect matching of InAs conduction-band and GaSb valence-band wave functions at the InAs/GaSb interfaces. These resonances produce a strong dependence of the current-voltage characteristics on GaSb layer width that is both predicted theoretically and observed experimentally. Our results also suggest that coupling between InAs conduction-band and GaSb heavy-hole valence-band states is relatively unimportant in these devices. In addition, we have been able to obtain peak current densities of ∼9×104 A/cm2, significantly higher than any previously reported current densities for this structure.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2256-2258 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first effective p-type doping of molecular beam epitaxy (MBE) grown GaSb using silicon. The samples were grown by molecular beam epitaxy and characterized by Hall-effect measurements and photoluminescence. Room-temperature hole concentrations ranging from 4.0×1015 to 4.3×1018 cm−3 were obtained. Photoluminescence (PL) spectra undergo considerable broadening with increasing doping concentration, consistent with an impurity banding picture. Furthermore, the MBE-grown samples display only one of the two PL features found in a melt-grown substrate and no other satellites, suggesting higher material purity. This may be a direct benefit from the use of an antimony cracker, ultrahigh vacuum conditions, and high-purity elemental sources. The short-period strained-layer superlattice buffering scheme employed may have also contributed to better structural quality.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1257-1259 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed negative differential resistance (NDR) and large peak current densities in a novel resonant interband tunneling structure grown by molecular beam epitaxy in the InAs/GaSb/AlSb material system. The structure consists of a thin AlSb barrier layer displaced from an InAs(n)/GaSp(p) interface. NDR is readily observable at room temperature with peak current densities greater than 105 A/cm2. The enhancement in peak current density relative to a structure with no AlSb barrier is consistent with the existence of a quasi-bound state in the region between the barrier and the InAs/GaAs interface. Furthermore, we demonstrate that by growing the AlSb layer on either the InAs or GaSb side of the interface, the quasi-bound state can be localized in either material.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 683-685 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed negative differential resistance at room temperature from devices consisting of a single interface between n-type InAs and p-type GaSb. InAs and GaSb have a type II staggered band alignment; hence, the negative differential resistance arises from the same mechanism as in a p+-n+ tunnel diode. Room-temperature peak current densities of 8.2×104 A/cm2 and 4.2×104 A/cm2 were measured for structures with and without undoped spacer layers at the heterointerface, respectively.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...