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  • 1
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    Population Balance Modeling of the Conidial Aggregation of Aspergillus niger (2008)
    Details
    Publication Date: 2020-03-20
    Language: English
    Type: article , doc-type:article
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    OPUS
  • 2
    Electronic Resource
    Electronic Resource
    Self-assembled molecular rectifiers (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 5249-5253 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Self-assembled monolayers (SAMs) of C6H5–C(Triple Bond)C–C6H4–C(Triple Bond)C–C6H4SH (1) on Au(111) and Ag(111) exhibit electrical rectifying behavior when probed by the scanning tunneling microscope whereas SAMs derived from decanethiol, benzenethiol and 4-phenylethynylbenzenethiol do not. We suggest that rectification arises from the conjugated length of the molecular framework of 1 and an increase of the donor character of the sulfur atom to this system upon adsorption to the metal. This is supported by surface second-harmonic generation measurements which show a significantly larger second order optical nonlinearity of SAMs of 1 compared to the other systems. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473523
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Vibrational dynamics of the Si–H stretching modes of the Si(100)/H:2×1 surface (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 4269-4278 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The lifetime T1 of the symmetric Si–H stretching mode for the Si(100)/H:2×1 surface is significantly longer (T1(approximately-greater-than)6 ns at 100 K) than for Si(111)/H:1×1. T1 is strongly sample dependent and temperature dependent. Samples with the longest lifetimes also show the smallest inhomogeneous width. The difficulty in reproducing the longer lifetimes at low temperature indicates that the measured T1 may not be intrinsic and may by due to defects. The deuterated surface has a lifetime of 250±30 ps with little variation from sample to sample and a weak temperature dependence. It is expected to be the intrinsic lifetime. On the hydrogenated surface, the energy transfer time between the symmetric and asymmetric mode is measured to be 90±15 ps at 100 K. From photon-echo measurement, the measured dephasing time at 100 K is 75±5 ps. We propose that the dephasing on that surface is induced by a low-energy silicon phonon (200–300 cm−1) as for the Si(111)/H:1×1 surface. We derive an expression relating the dephasing time and the energy transfer time for the general case of two coupled oscillators and discuss its application to this system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469474
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic heat capacity in lanthanum manganite single crystals (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5825-5827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heat capacity of single crystal La0.7D0.3MnO3, where D=Ca, Sr, has been measured through the Curie point in fields up to 70 kOe. The magnetic contribution of the Ca sample exhibits a sharp heat capacity peak at TC(similar, equals)218 K in zero field. The peak broadens and decreases in height with increasing field but, unlike an ordinary ferromagnet, the peak shifts substantially in temperature. As a consequence, the heat capacity data cannot be collapsed into a single scaling function. These features indicate that the transition is not an ordinary second-order ferromagnetic transition. Preliminary heat capacity data from the Sr-doped single crystal, with TC(similar, equals)360 K, do not exhibit the same shift in peak position with applied field. We attribute the difference in behavior between Ca- and Sr-doped samples to a change in the nature of the phase transition as TC lowers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372535
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Oxygen doping in close-spaced-sublimed CdTe thin films for photovoltaic cells (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3607-3609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient CdTe/CdS thin film solar cells have been the recent focus, in which the CdTe layers were reported by close-spaced sublimation, and oxygen was used to control the p-type conductivity of the deposited films. Both the fundamental gap and the impurity level were determined by the wavelength modulation reflectance spectroscopy, which demonstrates that while oxygen atoms have an ionization energy of about 0.1 eV, they do not behave as a simple shallow acceptor. This finding is supported by the electrical characterization. The oxygen concentration incorporated in the CdTe thin films were found to be in the range of 1019–1020 cm−3 by the IR measurements, while a carrier concentration between 1010 and 1012 cm−3 was obtained by Hall measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336792
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    An investigation of the Pd-In-Ge nonspiking Ohmic contact to n-GaAs using transmission line measurement, Kelvin, and Cox and Strack structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4364-4372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Pd-In-Ge nonspiking Ohmic contact to n-GaAs has been investigated using the transmission line, the Kelvin, and the Cox and Strack structures. It has been found that a layered structure of Pd/In/Pd/n-GaAs with 10–20 A(ring) of Ge imbedded in the Pd layer adjacent to the GaAs can lead to a hybrid contact. When the Ohmic formation temperature is above 550 °C, a layer of InxGa1−xAs doped with Ge is formed between the GaAs structure and the metallization. When the Ohmic formation temperature is below 550 °C, a regrown layer of GaAs also doped with Ge is formed at the metallization/GaAs interface. The contact resistivity of 2–3×10−7 Ω cm2 for this contact structure is nearly independent of the contact area from 900 to 0.2 μm2. Low-temperature Ohmic characteristics and thermal stability are also examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348360
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence and electrical studies of Si-doped AlxGa1−xAs grown on various substrate orientations by metalorganic chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3278-3285 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence and electrical behavior of Si-doped AlxGa1−xAs has been investigated on various GaAs substrate orientations viz. (100)2°(110), (111)Ga, and (110). The growth has been performed by metalorganic chemical vapor deposition with a systematic variation of the silane input mole fraction, the V/III ratio and the aluminum fraction. It is found that the (110) layers show an abnormal electrical behavior especially in carrier concentration and mobility. On these layers also two new PL peaks have been found. By correlating all possible pair defects with the peaks as a function of the experimental conditions, these two peaks could be assigned to originate from a VAs-AsGa complex and a VAs-SiAs or VAs-SiGa complex. The abnormal electrical results for (110) can be explained by the presence of these complexes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348548
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Electron optical design of a high-resolution low-voltage scanning electron microscope with field emission gun (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2905-2910 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In the present study, a comprehensive description and a complete process for designing a high-resolution low-voltage scanning electron microscope with a field emission gun have been discussed, including the design of two types of magnetic immersion lenses optimized for low-voltage operation, the evaluation of their resolution, the design of the magnetic lens/secondary electron collector system, the calculation of three-dimensional trajectories for both secondary electrons and backscattered electrons, and the estimate of their collection efficiency. The computed results and the primary experiments indicate the possibility of achieving nanometer resolution, which basically approaches the electron optical predictable probe size for the low-voltage scanning electron microscope.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144381
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    High-resolution low-voltage electron optical system for very large specimens (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 3434-3441 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article introduces an unconventional electron optical probe forming system which is particularly suitable for low beam voltages and very large specimens, such as semiconductor wafers which also require a large angle tilting. The system can produce an electron probe of less than 20 A(ring) for a nontilting specimen at 1-kV beam voltage with a working distance of 2.5 mm. The particular design allows a large volume of free space below the specimen which may be used to accommodate a complicated transporting mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140541
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Strain-induced confinement of carriers to quantum wires and dots within an InGaAs-InP quantum well (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 681-683 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a novel method of confining carriers by deliberately creating large inhomogeneous strain patterns in a quantum well. The strain modulates the band gap to provide lateral quantum confinement for excitons. Here, we generate strain confinement in an InGaAs quantum well by reactive ion beam assisted etching through an overlying compressed pseudomorphic quaternary layer using etch masks patterned by electron beam lithography. Photoluminescence spectra of arrays of wires and dots show red-shifted band gaps in direct evidence of lateral confinement. We compare our results to finite element calculations of the inhomogeneous strain in an InP substrate from a compressed overlayer patterned into rectangular wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102266
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