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  • 1
    Electronic Resource
    Electronic Resource
    An investigation of the Pd-In-Ge nonspiking Ohmic contact to n-GaAs using transmission line measurement, Kelvin, and Cox and Strack structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4364-4372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Pd-In-Ge nonspiking Ohmic contact to n-GaAs has been investigated using the transmission line, the Kelvin, and the Cox and Strack structures. It has been found that a layered structure of Pd/In/Pd/n-GaAs with 10–20 A(ring) of Ge imbedded in the Pd layer adjacent to the GaAs can lead to a hybrid contact. When the Ohmic formation temperature is above 550 °C, a layer of InxGa1−xAs doped with Ge is formed between the GaAs structure and the metallization. When the Ohmic formation temperature is below 550 °C, a regrown layer of GaAs also doped with Ge is formed at the metallization/GaAs interface. The contact resistivity of 2–3×10−7 Ω cm2 for this contact structure is nearly independent of the contact area from 900 to 0.2 μm2. Low-temperature Ohmic characteristics and thermal stability are also examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348360
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  • 2
    Electronic Resource
    Electronic Resource
    Annealing behaviors of dislocation loops near the projected range in high-dose As+- implanted (001)Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4503-4507 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing behaviors of dislocation loops formed near the projected range (Rp loops) in 150 keV, 5×1015/cm2 As+- implanted (001)Si have been studied by both planview and cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry. Factors influencing the formation and growth of the Rp loops, such as annealing temperature and time, as well as single- and two-step annealings have been investigated. The Rp loops were observed in samples annealed at 550–900 °C for 0.5 h. The loops were also found in samples annealed at 800 °C for a time as short as 1 s and as long as 8 h. However, they were not seen in samples annealed at 470 °C for 4 h, 500 °C for 2 h, or 550 °C for 15 min. The annealing behaviors of Rp loops in single- and two-step annealed samples and in samples with an oxide capping layer were found to be consistent with the suggestion that their formation is related to the agglomeration of self-interstitials mediated by the presence of a high concentration of electrically inactive arsenic atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346201
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  • 3
    Electronic Resource
    Electronic Resource
    Compositional disordering by solid phase regrowth (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 625-627 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The principle of solid phase regrowth (SPR)has been used to induce compositional disordering in AlGaAs/GaAs superlattice structures in the temperature range of 400 °C (30 min)–650 °C (30 s) as compared to the conventional diffusion method in the temperature range of 600–850 °C for hours. The SPR process is simple to implement, requiring only thin-film deposition and annealing. The crystal quality as well as the photoluminescence signals emerging from the disordered region generally improve with increasing processing temperature. The simplicity, the low process temperature, and the short process duration of the SPR technique are distinct advantages for optoelectronic applications, especially for self-aligned devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104549
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of arsenic concentration on the formation of dislocation loops near the projected ion range in high-dose As+-implanted (001) Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2304-2306 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of a two-layer structure and the inhibition of the formation of dislocation loops near the projected ion range (Rp ) have been observed by cross-sectional transmission electron microscopy in 80 keV, 1×1016 and 2×1016/cm2 As+-implanted (001) Si, respectively. The correlations among the arsenic concentration, electrical inactivation of impurity, suppression of the formation of interstitial loops near Rp, and retardation of the epitaxial regrowth rate provide significant insight into the point-defect migration and agglomeration during solid phase epitaxial regrowth of implantation amorphous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102045
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  • 5
    Electronic Resource
    Electronic Resource
    Direct observation of discrete layers of dislocation loops near the projected ion ranges in high-dose P+-implanted (001)Si by cross-sectional transmission electron microscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 565-567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of discrete layers of dislocation loops near the projected ion ranges (Rp loops) of 65–80 keV, high-dose (5×1015–2×1016/cm2) P+-implanted (001)Si was observed by cross-sectional transmission electron microscopy (XTEM). Both the energy and dose dependence of the annealing behaviors of Rp loops provided strong evidences that they are related to P clustering. The inactivation of dopants due to precipitation, hence the appearance of Rp loops, is correlated to the sheet resistance data. The retardation of the solid phase epitaxial growth was shown to be related to the formation of Rp loops. Using Rp loops as an indicator of changes in point-defect distribution, a combined XTEM and plan-view TEM study was found to be most appropriate for the study of the precipitation process in high-dose P+-implanted silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101833
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  • 6
    Electronic Resource
    Electronic Resource
    Spontaneous patterning in high temperature superconducting film by liquid-gas-solidification processing (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1045-1047 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Without any post physical or chemical patterning a Tl-base high temperature superconducting film has been observed to pattern spontaneously on SrTiO3 (100) by liquid-gas-solidification process. The film exhibits the morphology of a microelectric network in which the directions of growth of the crystal walls follow the directions of the SrTiO3 (100) substrate. The crystal walls consisting of Tl-1223 and Tl-1212 phases are 0.25–1 μm wide, 2 μm high, and a few millimeters long. These walls are proposed to grow from independent nucleation sites and coalescence to form semiconductive junctions. The network exhibits a superconducting transition onset at 113 K and approaches zero resistance at 95 K. Below 95 K, the resistance increases exponentially with decreasing temperature. This strongly suggests that the films form a natural superconductor/semiconductor/superconductor junction array.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112147
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