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  • 1
    Electronic Resource
    Electronic Resource
    Nitrogen ion implantation with energy scanning mode into Zr (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1500-1503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study effects of ion implantation with the energy scanning mode on the surface structure and the depth profile, Zr samples were implanted with 15N2 ions, where ion energy was scanned in the range of 70–100 and 70–130 keV using a computer-controlled power supply at an interval of 2 keV while monitoring the ion current of the sample. After the implantation of a total fluence of 3.5×1017 ions/cm2, the depth profiles of 15N2 ions in Zr were measured by nuclear reaction analysis of 15N(p,αγ)12C at 429 keV and the surface was observed by scanning electron microscopy. It was found that the implanted surface structure strongly depended on the implantation mode, and blistering induced by high fluence implantation of nitrogen could be completely avoided with the implantation mode of increasing energy gradually. The depth profiles were satisfactorily in agreement with the prediction by Monte Carlo simulation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360240
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  • 2
    Electronic Resource
    Electronic Resource
    Depth profile of trapped charges in oxide layer of 6H-SiC metal–oxide–semiconductor structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 282-287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide layers etched at an angle were fabricated on a 6H-SiC substrate by varying etching time in diluted hydrofluoric acid, and 6H-SiC metal–oxide–semiconductor structures with various oxide thicknesses were formed. High-frequency capacitance–voltage measurements were carried out for determining the change in gate voltages corresponding to the midgap condition as a function of the thickness of the oxide layer, and the depth profile of trapped charge density in the oxide was estimated from the result. It is found that negative charges build up near the 6H-SiC/SiO2 interface, and that positive charges accumulate in the region at 40 nm from the interface. No significant difference is observed in the depth profiles of the trapped charge density between the oxide layers on the carbon and silicon faces. The origin of these trapped charges is discussed in conjunction with the carbon-related compounds in the oxide layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362817
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of β-Si3N4 by nitrogen implantation into SiC (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7018-7021 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline β-SiC samples were implanted with 50 keV 15N ions with fluences ranging from 3×1017 to 1.5×1018 ions/cm2 at elevated temperature up to 1100 °C. Nitrogen depth profiles were measured as a function of implantation temperature and annealing temperature using nuclear reaction analysis, Rutherford backscattering spectroscopy, and Auger electron spectroscopy. It was found that the maximum concentration and the width of nitrogen depth profiles implanted at 1100 °C were reduced distinctly in comparison with the profiles implanted below 930 °C or annealed at 1100 °C. The redistribution of nitrogen implanted in SiC at 1100 °C was ascribed to the formation of β-Si3N4 crystallites in SiC, which was confirmed by x-ray diffraction at glancing incidence. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360470
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of epitaxial TiN films on MgO(100) by high current discharge plasma (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5663-5667 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High current discharge plasma produced by the Ta-LaB6 cathode was used for ion plating of TiN films. The dependence of the deposition rate of TiN on the substrate dc bias potential was measured using the Rutherford backscattering spectrometry (RBS) method. The results indicate that the particles impinging on the substrate, i.e., vaporized particles (Ti) and reactive gases (N2), could be ionized at high efficiency of 70%. Epitaxial TiN films were grown at temperatures between 400 and 700 °C on cleaved MgO(100) substrate supplied with negative dc anf rf potential. Structures of the epitaxial film were investigated by RBS and ion channeling, and scanning tunneling microscope (STM). The minimum channeling yields for (100) and (110) axes obtained at a substrate temperature of 550 °C with the growth rate of 40 A(ring)/s were found to be 1.4% and 2.0%, respectively, which were almost the same as that of the MgO substrate. Atomically resolved tunneling images of (100) surface of the epitaxial TiN film were observed by STM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351915
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  • 5
    Electronic Resource
    Electronic Resource
    Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1464-1466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes the memory effect of an AlGaAs/GaAs heterojunction field-effect transistor that contains InAs nanodots in the barrier layer. The device experiences a shift of threshold gate voltage, as a function of the amount of the electrons trapped in the nanodots. These trapped electrons can be injected by applying a positive gate voltage and be erased by a visible light illumination at negative gate bias. Although the shift of the threshold gate voltage volatilizes with the time after the memory programing operation, a considerable part of the shift is retained even after 100 h at room temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126065
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  • 6
    Electronic Resource
    Electronic Resource
    Hydrogenated microcrystalline silicon germanium: A bottom cell material for amorphous silicon-based tandem solar cells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4224-4226 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed hydrogenated microcrystalline silicon germanium, which exhibits a red-shifted absorption spectrum relative to hydrogenated microcrystalline silicon, as a candidate material for the bottom cell of amorphous silicon-based tandem solar cells. Optical absorption, x-ray diffraction, and Raman scattering spectra are presented in addition to optoelectronic properties and light-induced changes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116993
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  • 7
    Electronic Resource
    Electronic Resource
    Role of the hydrogen plasma treatment in layer-by-layer deposition of microcrystalline silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3403-3405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the role of hydrogen in hydrogenated microcrystalline silicon (μc-Si:H) formation using hydrogen plasma treatments, in particular examining the possibility of subsurface reaction due to permeating hydrogen atoms, which leads to the crystallization of hydrogenated amorphous silicon (a-Si:H). It is demonstrated that the hydrogen plasma treatment of a-Si:H film on the anode using a cathode covered by a-Si:H film, which is inevitably coated during the deposition period, gives rise to the deposition of μc-Si:H over the a-Si:H layer, i.e., chemical transport takes place. It is also found that the pure hydrogen plasma treatment using a clean cathode induces only etching of the a-Si:H layer. These results imply that the present hydrogen plasma condition does not cause crystallization of a-Si:H but only etching, and that careful experimentation is required to determine the real subsurface reaction due to atomic hydrogen. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120324
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  • 8
    Electronic Resource
    Electronic Resource
    Rapid sequence induction for penetrating head injury from a chopstick in a paediatric patient (2002)
    Oxford UK : Blackwell Science Ltd.
    Pediatric anesthesia 12 (2002), S. 0 
    Details
    ISSN: 1460-9592
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1460-9592.2002.0787g.x
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of famotidine and cimetidine on plasma levels of epidurally administered lignocaine (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Anaesthesia 45 (1990), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The effects of two H2-receptor antagonists, famotidine and cimetidine, on the plasma levels of epidurally administered lignocaine were studied. Group A (n = 20) received famotidine 20 mg orally the night before surgery and 20 mg intramuscularly 60 minutes before induction of anaesthesia. Group B (n = 15) received cimetidine 200 mg orally the night before the surgery and 400 mg orally 60 minutes before the anaesthetic induction. Group C (n = 20) received neither famotidine nor cimetidine and served as controls. Twelve millilitres of 2.0% lignocaine with adrenaline 1:200 000 was injected into the epidural space in all patients, after the establishment of general anaesthesia with nitrous oxide, oxygen, and enflurane (0.3–0.5%). The patients who received cimetidine showed significantly higher plasma concentrations of lignocaine compared with either group A or group C at all investigation times (p 〈 0.01). The mean peak plasma concentrations were 2.4 (SEM 0.1), 3.2 (SEM 0.2) and 2.3 (SEM 0.1) μg/ml in group A, B, and C, respectively. This study suggests that famotidine is preferable to cimetidine for control of gastric acidity before the use of lignocaine as the epidural anaesthetic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2044.1990.tb14437.x
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  • 10
    Electronic Resource
    Electronic Resource
    Expression of metastasis suppressor gene product, nm23 protein, is not inversely correlated with the tumour progression in human malignant melanomas (1996)
    Oxford, U.K. and Cambridge, USA : Blackwell Science Ltd
    Histopathology 29 (1996), S. 0 
    Details
    ISSN: 1365-2559
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: An inverse correlation between the nm23 RNA level and tumour progression of melanocytes has been reported. To elucidate whether the expression of nm23 gene product in malignant melanoma is also inversely correlated with metastatic potential, conventional prognostic parameters or the tumour suppressor protein p53, immunohistochemical studies using a monoclonal antibody against nm23-H1 protein were performed on 138 benign and malignant melanocytic tumours. The expression of nm23 protein was compared with that of p53 protein and conventional clinicopathological prognostic factors. The nm23 protein level in benign melanocytes and metastatic melanoma cells was also studied by Western blot analysis. No significant difference regarding the protein was observed between naevi and melanomas, either at histological or protein levels. The expression correlated with local recurrence within 1 year after surgery, level of invasion and tumour thickness, but no parallels were observed between the nm23 and p53 proteins, suggesting that gene is regulated by independent mechanisms, although located on the same chromosome. There was no inverse correlation between the nm23 protein and melanoma metastasis which suggested that the nm23 protein does not appear to be lost during melanoma metastasis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2559.1996.d01-537.x
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