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  • III–V semiconductors  (2)
  • addition of H2 and Ar  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Characteristics of vinyl iodide microwave plasma etching of GaAs/AlGaAs and InP/InGaAs heterostructures (1993)
    Springer
    Plasma chemistry and plasma processing 13 (1993), S. 333-350 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; microwave discharges ; electron spectroscopy for chemical analysis ; addition of H2 and Ar
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Vinyl iodide (C2H3I) microwave discharges with additions of H2 and Ar are found to provide faster etch rates than conventional CH4/H2/Ar discharges for InP, InGaAs, GaAs, and AlGaAs. This is a result of the relatively high volatilities of indium, gallium, and aluminum iodide species. The etched features are smooth and anisotropic over a wide range of do self-biases (−150 to −350 V), process pressures (1–20mTorr), and microwave powers (150–500 W). The polymer that forms on the mask during the plasma exposure can be readily removed in O2 discharges. Electron spectroscopy for chemical analysis (ESCA) showed that the etched surfaces are slightly deficient in the group V elements under most conditions, but changes to the optical properties of the semiconductors are minimal. No defects are visible by transmission electron microscopy (TEM) in GaAs or InP samples etched at dc biases ≤ −250 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01466048
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part I: GaAs and related compounds (1991)
    Springer
    Plasma chemistry and plasma processing 11 (1991), S. 405-422 
    Details
    ISSN: 1572-8986
    Keywords: III–V semiconductors ; ECR ; dry etching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A systematic study has been performed of the dry etching characteristics of GaAs, Al0.3Ga0.7As, and GaSb in chlorine-based electron cyclotron resonance (ECR) discharges. The gas mixtures investigated were CCl2F2/O2, CHCl2F/O2, and PCl3. The etching rates of all three materials increase rapidly with applied RF power, while the addition of the microwave power at moderate levels (150 W) increases the etch rates by 20–80%. In the microwave discharges, the etch rates decrease with increasing pressure, but at 1 m Torr it is possible to obtain usable rates for self-bias voltages ≤ 100 V. Of the Freon-based mixtures, CHCl2F provides the least degradation of optical (photoluminescence) and electrical (diode ideality factors and Schottky barrier heights) properties of GaAs as a result of dry etching. Smooth surface morphologies are obtained on all three materials provided the microwave power is limited to ≤ 200 W. Above this power, there is surface roughening evident with all of the gas mixtures investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01447156
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part II: InP and related compounds (1991)
    Springer
    Plasma chemistry and plasma processing 11 (1991), S. 423-438 
    Details
    ISSN: 1572-8986
    Keywords: III–V semiconductors ; ECR ; dry etching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Electron Cyclotron Resonance (ECR) discharges of CCl2F2 or PCl3 have been used to etch InP, InAs, InSb, InGaAs and AlInAs. The etch rates of these materials increase linearly with additional RF power level applied to the cathode and are in the range 50–180 Å · min−1 for 50 W (DC bias ∼ 308 V), 10 mTorr, 38 CCl2F2/2 O2 plasmas. The etch rates fall rapidly with increasing pressure or increasing O2-to-CCl2F2 ratio. Polymeric surface residues up to 40 Å thick are found on all of these semiconductors when using Freon-based gas mixtures. Etching at practical rates is possible with only 100 V self-bias when using PCl3 discharges, and the addition of microwave excitation under these conditions enhances the etch rates by factors of 2–9. At higher self-biases (300 V) etch rates of 3500–8000 Å · min−1 are possible with PCl3 although the surface morphologies are significantly rougher and the etching less anisotropic than with CCl2F2-based mixtures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01447157
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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