ISSN:
1572-817X
Keywords:
GaN
;
nonlinear refractive index
;
third-order nonlinearity
;
two-photon absorption
;
two-photon confocal microscopy
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract We have studied third order nonlinearities, including two-photon absorption coefficient β and nonlinear refractive index n 2, of GaN in below bandgap ultraviolet (UV) wavelength regime by using UV femtosecond pulses. Two-photon absorption was investigated by demonstrating femtosecond UV pulsewidth autocorrelation in a GaN thin film while femtosecond Z-scan measurements revealed information for both n 2 and β. The distribution of n 2 versus wavelength was found to be consistent with a model described by the quadratic Stark effect, which is the dominant factor contributed to the nonlinear refractive index near the bandgap. Large β on the order of 10 cm/GW and large negative n 2 with a magnitude on the order of several 10−12 cm2/W were obtained. The β at near mid-gap infrared (IR) wavelength was also found to be on the order of several cm/GW by using two-photon-type autocorrelations in a GaN thin film. Taking advantage of the large two-photon absorption at mid-gap wavelengths, we have demonstrated excellent image quality on two-photon confocal microscopy, including two-photon-scanning-photoluminescence imaging and two-photon optical-beam-induced current microscopy, on a GaN Hall measurement sample and an InGaN green light emitting diode.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1007076506723
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