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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 327-331 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6591-6593 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ball milling on the magnetic properties of the Pr15Fe80B5 alloy, whose as-cast structure was composed of matrix phase Pr2Fe14B and Pr-rich and α-Fe phases, has been investigated by measuring iHc, thermomagnetic curves, and x-ray diffraction (XRD) patterns. By ball milling using a planetary ball mill up to 96 h, iHc decreased with the amorphization of the matrix and Pr-rich phases. However, subsequent heat treatments gave rise to the marked increase of iHc. The alloy, after 48 h of ball milling and subsequent 600 °C annealing possessed iHc of 17.4 kOe, Br of 5.8 kG, and (BH)max of 6.5 MGOe. This alloy showed sharp diffraction peaks of Pr2Fe14B phase, while the α-Fe phase peak, which persisted through the ball milling process, almost disappeared. The high iHc of the Pr-Fe-B alloy, subjected to optimum milling and subsequent annealing, was attributed to a very fine Pr2Fe14B phase precipitation from the amorphous state and to the effective solution of the α-Fe phase into the matrix phase. Also, a small addition of Cu to the Pr15Fe80B5 alloy was found to increase the coercivity. Further, the alloy milled for 12 h and annealed at 600 °C for 1 h showed iHc of 19.7 kOe, Br of 7.0 kG, and (BH)max of 10.2 MGOe.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2143-2148 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we present, results on the growth of in situ doped p-on-n heterojunctions on HgCdTe epilayers grown on (211)B GaAs substrates by molecular-beam epitaxy (MBE). Long wavelength infrared (LWIR) photodiodes made with these grown junctions are of high performance. The n-type MBE HgCdTe/GaAs alloy epilayer in these structures was grown at Ts=185 °C and it was doped with indium (high 1014 cm−3 range) atoms. This epilayer was directly followed by the growth, at Ts=165 °C, of an arsenic-doped (1017–1018 cm−3 ) HgTe/CdTe superlattice structure which was necessary to incorporate the arsenic atoms as acceptors. After the structure was grown, a Hg annealing step was needed to interdiffuse the superlattice and obtain the arsenic-doped p-type HgCdTe layer above the indium-doped layer. LWIR mesa diodes made with this material have 77 K R0A values of 5×103, 81, 8.5, and 1.1 Ω cm2 for cutoff wavelengths of 8.0, 10.2, 10.8, and 13.5 μm, respectively; the 77 K quantum efficiency values for these diodes were greater than 55%. These recent results represent a significant step toward the demonstration of MBE as a viable growth technique for the in situ fabrication of large area LWIR focal plane arrays.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4459-4461 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayered Co/Pd thin films were prepared by sequential electron-beam evaporation of Co and Pd onto Si substrates at room temperature. The thicknesses of the Co sublayer and of the Pd sublayer were varied between 2.0–10.3 and 4.5–22.3 A(ring), respectively. As the Pd sublayer thickness was varied at constant Co thickness, broad maxima in the saturation magnetization Ms and intrinsic perpendicular anisotropy energy Ku were observed at a Pd thickness of about 10 A(ring). At this maximum, Ms per Co volume is larger than the saturation magnetization of bulk Co. This is believed to be caused by the polarization of the Pd atoms within about 10 A(ring) of the Co layer. Ku and Ms per Co volume both decrease with increasing Co layer thickness.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 2536-2547 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Reactions of H atoms with N2O have two product channels yielding NH+NO and OH+N2. Both channels were observed via NH A 3Π←X 3∑ and OH A 2∑←X 2Π laser-induced fluorescence spectra. Photoinitiated reactions with N2O–HI complexes yield a much lower [NH]/[OH] ratio than under the corresponding bulk conditions at the same photolysis wavelength. For hot D-atom reactions with N2O, this effect is somewhat more pronounced. These results can be interpreted in terms of entrance channel geometric specificity, namely, biasing hydrogen attack toward the oxygen. Another striking observation is that the OH and OD rotational level distributions (RLD) obtained under bulk conditions differ markedly from those obtained under complexed conditions, while the NH as well as the ND RLD are similar for the two environments. In addition, OH Doppler profiles change considerably in going from bulk to complexed conditions, while such an effect is not observed for NH. The changes observed with the OH RLD are most likely due to OH–halogen interactions and/or entrance channel specificity. Under bulk conditions, the Doppler shift measurements indicate a large amount of N2 internal excitation (i.e., ∼25 000 cm−1) for the OH (v=0) levels monitored. This is consistent with a reaction mechanism involving an HNNO° intermediate. The hot hydrogen atom first attaches to the terminal nitrogen of N2O and forms an excited HNNO° intermediate having a relatively elongated N–N bond compared with N2O. Then the H atom migrates from nitrogen to oxygen and exits to the N2+OH product channel, leaving N2 vibrationally excited. A simple Franck–Condon model can reconcile quantitatively the large amount of N2 vibrational excitation.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 1892-1898 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Hyper-quasielastic light scattering of liquid carbon tetrachloride CCl4 is measured in the temperature range between −9 and 68 °C. The spectra consist of two different Lorentzians, narrow and broad ones. By the measurements of the polarization ratio and the temperature dependence of the spectra, the narrow Lorentzian spectrum is found to arise from the rotational Brownian motion of a CCl4 molecule. This spectrum is inactive for both Raman and infrared measurements but is only active for the hyper-Raman measurement. The broad Lorentzian spectrum mainly comes from the temporary dipole moment induced by the intermolecular interactions between the molecules. The intermolecular interaction becomes strongest around 40 °C. The temperature dependences of the half-width and the integrated intensity of the narrow Lorentzian are strongly affected by the intermolecular interactions.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 5392-5402 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A high resolution rovibrational absorption spectrum of the weakly bonded CO2–DBr complex has been recorded in the 2350 cm−1 region by exciting the CO2 asymmetric stretch vibration with a tunable diode laser. The CO2–DBr band origin associated with this mode is 2348.2710 cm−1, red-shifted by 0.87 cm−1 from uncomplexed CO2. The position of the hydrogen atom is determined from differences in moments-of-inertia between CO2–DBr and CO2–HBr, i.e., by using the Kraitchman method. From this, we conclude that ground state CO2–H(D)Br has an average geometry that is planar and inertially T-shaped, with essentially parallel HBr and CO2 axes. Average values of intermolecular parameters are: Rcm=3.58 A(ring), θBrCO=79.8°, and θHBrC=93.1°. The validity of using the Kraitchman method, which was designed for use with rigid molecules, with a floppy complex like CO2–HBr is discussed. The experimental structure is corroborated qualitatively by results from Møller–Plesset second-order perturbation calculations, corrected for basis set superposition errors. The theoretical equilibrium geometry for the inertially T-shaped complex is planar with structural parameters: RCBr=3.62 A(ring), θBrCO=89°, and θHBrC=86°. A number of cuts on the four dimensional intermolecular potential surface confirm large zero-point amplitudes, which are known to be characteristic of such systems, and these cuts are used to estimate tunneling splittings. Tunneling is shown to occur by out-of-plane rotation of the H atom, in accord with the experimental observations of Rice et al. There is no significant in-plane tunneling. A quasilinear hingelike isomer (OCO–HBr) with ROH=2.35 A(ring) at equilibrium is calculated to be as stable as the T-shaped complex; however, this species has yet to be observed experimentally. Photoinitiated reactions in CO2–HX complexes are discussed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4721-4726 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isothermal vapor-phase-epitaxial (ISOVPE) growth of device-quality HgCdTe layers on both CdTe and CdTe/Al2O3 substrates has been demonstrated. The material and device properties on both types of substrates have been studied and compared with reported values for HgCdTe grown by other techniques. The as-grown ISOVPE Hg1−xCdxTe (x(approximately-equal-to)0.3) epilayers are always p type with carrier concentrations of ∼5×1015 to 3×1016 cm−3 and mobilities of ∼230–260 cm2/V s at 77 K. The temperature and compositional dependence of electrical properties of ISOVPE Hg1−xCdxTe are somewhat different from those of liquid-phase epitaxy (LPE) and bulk HgCdTe. In particular, the acceptor ionization energy, EA =7 meV, is about half that obtained in midwavelength infrared LPE or bulk HgCdTe, and nearly independent of composition x. The R0A product of a representative photodiode (λc (approximately-equal-to)4.65 μm, 77 K) is 2×106 and 4 Ω cm2 at 77 and 195 K, respectively, with comparable device qualities seen on both CdTe and CdTe/Al2O3 substrates.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5199-5203 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium tin oxide (ITO) thin films were deposited on polymeric substrates at room temperature by dc reactive magnetron sputtering from an In–Sn (90–10 wt%) alloy target. The electrical, optical, and mechanical properties of ITO films on various substrates such as polycarbonate, acrylic, polyethylene terephthalate, and glass are influenced sensitively by sputtering parameters. Therefore, the dependence of these properties on dc power, working pressure, and partial oxygen content has been systematically investigated. Low dc power was applied to avoid the deformation of polymeric substrates. The electrical resistivity of as-deposited ITO films decreases initially and then increases as oxygen partial pressure (PO2) increases. The optical transmittance at visible wavelength of 550 nm was as much as 85%. The friction force of as-deposited ITO films on various substrates is increased with an increase of dc power, and behaves similarly to the optimum curve of resistivity with increasing PO2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 3801-3805 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have constructed a three-configurational surface magneto-optical Kerr effect system, which provides the simultaneous measurements of the "polar," "longitudinal," and "transverse" Kerr hysteresis loops at the position where deposition is carried out in an ultrahigh vacuum growth chamber. The present system enables in situ three-dimensional vectorial studies of ultrathin film magnetism with a submonolayer sensitivity. We present three-configurational hysteresis loops measured during the growth of Co films on Pd(111), glass, and Pd/glass substrates. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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