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  • 1
    Electronic Resource
    Electronic Resource
    Acidity of hydrocarbons. XXXVII. Broensted correlation and hydrogen isotope exchange kinetics of fluorenes, benzfluorenes, and indene with methanolic sodium methoxide (1971)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 93 (1971), S. 5088-5096 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00749a022
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  • 2
    Electronic Resource
    Electronic Resource
    Substrate temperature dependence of homoepitaxial growth of Si using mass selected ion beam deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4383-4389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxy of silicon at low temperature has been achieved using low-energy mass selected silicon ion beams. Reflection high-energy electron diffraction and Rutherford backscattering spectrometry have been utilized to assess the quality of silicon films deposited from 15 eV 28Si+ beams in the temperature range of 50–350 °C. Auger electron spectroscopy was used to monitor the contaminant levels on the surfaces. The films deposited at 350 °C are epitaxial and of a quality near that of the original substrate. The growth rate at 350 °C is ≈200 times faster than that for solid phase epitaxy. At 50 and 200 °C layer-by-layer epitaxial growth was inhibited and evidence for formation of three-dimensional islands in the early stage of growth followed by transition to an amorphous phase was observed. The transition to an amorphous phase occurred at lower film thickness (smaller ion dose) for lower temperatures. It is shown that small amounts of N+2 impurity in the 28Si+ beam, sufficient to add 1.4 at. % N to the silicon film, result in amorphous films, even at the highest temperature used, 350 °C. The effects of substrate temperature, contamination, and surface damage on the growth mechanism are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357328
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  • 3
    Electronic Resource
    Electronic Resource
    Smoothing of YBa2Cu3O7−δ films by ion cluster beam bombardment (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 246-248 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Smoothing high-temperature superconductor (HTS) surfaces, especially HTS thin-film surfaces, is crucial for HTS thin-film device processing. In this letter, we describe a method to planarize the surface of a YBa2Cu3O7−δ HTS film down to a smoothness with a standard deviation of 1 nm or better. The method includes first smoothing the HTS surface by ion cluster beam bombardment, followed by annealing in oxygen ambient to regrow the damaged surface layer. Additional YBCO layers can be grown epitaxially on the treated surface, even without removing the top surface layer, which contained some residual damage after annealing. This method can be integrated into HTS circuit fabrication as a key step of planarization. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120699
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  • 4
    Electronic Resource
    Electronic Resource
    Secondary ion mass spectroscopy study of Au trapping and migration in the Au-irradiated YBa2Cu3O7−δ film (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2738-2740 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The range data and migration of Au in YBa2Cu3O7−δ film were studied with implanted 197Au (1.5 MeV 5×1015 Au+/cm2) as a tracer. The film was a c-axis oriented film, ∼750 nm thick, deposited by high-pressure planar dc sputtering on 〈100〉 LaAlO3. Analysis by secondary ion mass spectroscopy shows that the as-implanted Au concentration distribution is essentially Gaussian-like and the depth (Rˆp) of maximum Au concentration (∼1.2 wt %) is 201 nm. The projected range (R¯p) and (Rˆp) are found to be in very good agreement with the simulated data by TRIM−95, whereas the measured "straggle'' (ΔRp*) is about 20% larger than that by TRIM−95 simulation. It has also been found that the implanted 197Au starts to migrate within the film at a temperature between 650 and 700 °C, which is much higher than that for the implanted 2H (∼175 °C) and the implanted 18O (between 250 and 300 °C) in c-oriented YBa2Cu3O7−δ films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115582
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  • 5
    Electronic Resource
    Electronic Resource
    Doping of diamond by coimplantation of carbon and boron (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1397-1399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have implanted boron ions into insulating natural diamonds which were predamaged by carbon ion implantation in order to enhance the doping efficiency. All implantations were performed at liquid-nitrogen temperature. Subsequent rapid thermal annealing at 1100 °C produced strong new optical absorption bands near 1060 cm−1, and a sharp absorption at 2962 cm−1 (0.37 eV) which is close to that attributed to substitutional boron in type IIB diamond. We obtained resistivity of the order of 100 Ω cm and carrier activation energy of 0.1 eV for a sample implanted with 2×1015 C and 3×1014 B per cm2 , indicating a high substitutional fraction of boron atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101605
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  • 6
    Electronic Resource
    Electronic Resource
    Stability of TaSix-GaAs Schottky barriers in rapid thermal processing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2200-2202 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: n-type GaAs samples coated with TaSi2 and Ta5 Si3 Schottky barrier contacts were heated in a flashlamp rapid thermal processing (RTP) system to temperatures between 600 and 950 °C. We have measured the evaporation of gallium and arsenic through the contact overlayers which results from the decomposition of the GaAs substrate. These decomposition measurements have been correlated with the Schottky barrier behavior as determined from forward-bias current-voltage characteristics and selected capacitance-voltage measurements. The high-temperature stability against decomposition and electrical degradation was superior for Ta5 Si3 contacts relative to TaSi2 contacts. We observed for both contact compositions that the onset temperature for decomposition of GaAs was slightly lower than the maximum temperature for electrical stability. Thus, we found that in some cases substantial decomposition occurred with no effect on the current-voltage characteristics. For example, Ta5 Si3 contacts maintained a stable barrier height of 0.78 eV through 10 s RTP treatments up to 900 °C, in spite of decomposition of at least ten equivalent monolayers of GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100506
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  • 7
    Electronic Resource
    Electronic Resource
    Anomalous diffusion of boron implanted into silicon along the [100] direction (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 851-853 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed transient enhanced diffusion of boron implanted into silicon along the [100] channeling direction and compared it with that of boron implanted in a "random'' direction. It is found that the anomalous boron displacement for the channeled implants is significantly greater than for the random counterparts. An empirical explanation for the greater displacement of the channeled implants is proposed that is related to the spatial distribution of the implanted boron and the lattice damage generated by the implantation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100092
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  • 8
    Electronic Resource
    Electronic Resource
    Anomalous oxidation rate of silicon implanted with very high doses of arsenic (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1001-1003 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anomalous increase in oxidation rate was observed during low-temperature thermal oxidation of very high dose (5×1016, 7×1016/cm2) As+ ion implanted silicon. Oxidation of Si at 850 °C was faster than that at 950 °C. This effect was attributed to the snowplowing of arsenic (which was more pronounced at lower temperatures) creating a glassy Si-O-As layer near the Si-SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98812
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  • 9
    Electronic Resource
    Electronic Resource
    Reactive ion etching of diamond (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 437-438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reliable means of removing surface layers of diamond is of significant importance for microelectronics as well as for other applications such as polishing of the diamond surface. Preliminary studies using reactive ion etching with O2 and H2 showed etching rates of the order of 560 A(ring)/min for thin carbon films and 350 A(ring)/min for natural type II-A diamonds using 300 eV oxygen ions. Addition of a substantial percentage of Ar to oxygen in the reaction chamber did not affect the etching rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101890
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  • 10
    Electronic Resource
    Electronic Resource
    Amorphization and annealing of LiTaO3 single crystal irradiated with Ar+ ions at 77 K (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3562-3568 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect structure of radiation damage due to irradiation of Ar+ ions and the regrowth of LiTaO3 single crystal has been studied using Rutherford backscattering-channeling, cross-sectional transmission electron microscopy, optical transmittance, and surface profilometer. The irradiation were carried out at 77 K with 217 keV Ar+ ions to various doses between 3×1013 and 6×1015 Ar+/cm2. Postannealing was performed in dry O2 ambient at temperatures from 648 to 823 K, which are below Curie temperature (878 K). The optical measurement showed that the as-irradiated samples are as transparent as the unirradiated sample, indicating that the radiation-induced point defects are highly mobile even at 77 K. However, the long-range migration of oxygen interstitials were suppressed at 77 K. Volumetric expansion occurred when irradiation doses exceeded 1.25×1014 Ar+/cm2. Collective lattice distortion was observed in the sample that had received a dose of 1.5×1014 Ar+/cm2. This study shows that both disorder overlapping and the disorder-induced strain energy play important roles in the amorphization process. The regrowth of the amorphized layers depends on the microstructure of the damage. The activation energy for the regrowth of the amorphized layer that received more irradiation (6×1015 Ar+/cm2) is 0.74 eV, lower than the activation energy of the amorphized layer (1.20 eV) that received less irradiation (6×1014 Ar+/cm2). © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450023
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