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  • 1
    Electronic Resource
    Electronic Resource
    Substrate temperature dependence of homoepitaxial growth of Si using mass selected ion beam deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4383-4389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxy of silicon at low temperature has been achieved using low-energy mass selected silicon ion beams. Reflection high-energy electron diffraction and Rutherford backscattering spectrometry have been utilized to assess the quality of silicon films deposited from 15 eV 28Si+ beams in the temperature range of 50–350 °C. Auger electron spectroscopy was used to monitor the contaminant levels on the surfaces. The films deposited at 350 °C are epitaxial and of a quality near that of the original substrate. The growth rate at 350 °C is ≈200 times faster than that for solid phase epitaxy. At 50 and 200 °C layer-by-layer epitaxial growth was inhibited and evidence for formation of three-dimensional islands in the early stage of growth followed by transition to an amorphous phase was observed. The transition to an amorphous phase occurred at lower film thickness (smaller ion dose) for lower temperatures. It is shown that small amounts of N+2 impurity in the 28Si+ beam, sufficient to add 1.4 at. % N to the silicon film, result in amorphous films, even at the highest temperature used, 350 °C. The effects of substrate temperature, contamination, and surface damage on the growth mechanism are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357328
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  • 2
    Electronic Resource
    Electronic Resource
    Initial evaporation rates from GaAs during rapid thermal processing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1168-1176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial rates of evaporation of Ga and As from the surface of single-crystal GaAs during rapid thermal processing (RTP) have been determined in the temperature range from 600 to 750 °C. Absolute vaporization rates for capless annealing of GaAs were measured by collecting the evaporated species on a copper film, which condenses 50%–100% of the evaporated material. Initial evaporation rates during RTP are shown to be in agreement with the maximum predicted rates based on the Hertz–Knudsen equation. In a second set of experiments, the preferential loss of arsenic for GaAs-GaAs proximity annealing was measured using ion channeling. All experimental results are interpreted in terms of a model which we develop for capless and proximity annealing based on the kinetic theory of gases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339976
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  • 3
    Electronic Resource
    Electronic Resource
    Amorphization and annealing of LiTaO3 single crystal irradiated with Ar+ ions at 77 K (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3562-3568 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect structure of radiation damage due to irradiation of Ar+ ions and the regrowth of LiTaO3 single crystal has been studied using Rutherford backscattering-channeling, cross-sectional transmission electron microscopy, optical transmittance, and surface profilometer. The irradiation were carried out at 77 K with 217 keV Ar+ ions to various doses between 3×1013 and 6×1015 Ar+/cm2. Postannealing was performed in dry O2 ambient at temperatures from 648 to 823 K, which are below Curie temperature (878 K). The optical measurement showed that the as-irradiated samples are as transparent as the unirradiated sample, indicating that the radiation-induced point defects are highly mobile even at 77 K. However, the long-range migration of oxygen interstitials were suppressed at 77 K. Volumetric expansion occurred when irradiation doses exceeded 1.25×1014 Ar+/cm2. Collective lattice distortion was observed in the sample that had received a dose of 1.5×1014 Ar+/cm2. This study shows that both disorder overlapping and the disorder-induced strain energy play important roles in the amorphization process. The regrowth of the amorphized layers depends on the microstructure of the damage. The activation energy for the regrowth of the amorphized layer that received more irradiation (6×1015 Ar+/cm2) is 0.74 eV, lower than the activation energy of the amorphized layer (1.20 eV) that received less irradiation (6×1014 Ar+/cm2). © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450023
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  • 4
    Electronic Resource
    Electronic Resource
    Al(Ge) metallization: The effect of Ge on the solubility of Si in Al (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4459-4462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The contact resistance between Al(Ge) alloys of various compositions and n+Si has been measured using a four-terminal Kelvin probe. The samples processed for these measurements as well as similarly prepared thin films on unprocessed Si wafers have been characterized by both scanning and transmission electron microscopy after heat treatment in the temperature range 350–500 °C. The specific contact resistances for the alloys are comparable to those found for pure Al contacts to Si. However, the alloyed contacts show considerably more spiking into the Si substrate due to dissolution of Si in the metal layer. For temperatures around 350 °C, excessive spiking (compared to pure Al) is believed to be caused by increased solubility of Si in Al due to the presence of Ge. The reason for the enhanced solubility of Si in the alloy could be a counteraction of the strain in the Al lattice by Si and Ge. For anneals at 450 °C the extensive spiking could be associated with liquification of the contact metal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336254
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  • 5
    Electronic Resource
    Electronic Resource
    Transition between Ge segregation and trapping during high-pressure oxidation of GexSi1−x/Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4750-4755 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transition from Ge segregation to trapping during high-pressure oxidation of GexSi1−x alloys has been observed. The atomic fraction x of Ge was varied from 0.4% to 26%, and oxidations were performed at 740 °C under 102 atm of dry O2. It was observed that the effect of oxidation on the Ge distribution could be divided into three stages. In the initial stage of the oxidation, Ge was segregated from the growing oxide and accumulated in a Ge-rich layer at the oxide/alloy interface. For alloys with high Ge content this initial stage was very short. In the second stage of oxidation, after a critical quantity of Ge had accumulated at the interface, there was a transition from segregation to trapping of Ge in the oxide. In the third stage, the critical amount of Ge remained segregated at the interface, and the final oxide layer was Ge free. A kinetic model based on a steady-state equilibrium between the diffusive flux of Si across the Ge-rich layer and the rate of Si consumption by the oxidation reaction predicts, with reasonable agreement, the critical quantity of segregated Ge for the onset of trapping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354345
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  • 6
    Electronic Resource
    Electronic Resource
    Comparison of backscattering spectrometry and secondary ion mass spectrometry by analysis of tantalum pentoxide layers (1974)
    s.l. : American Chemical Society
    Analytical chemistry 46 (1974), S. 2136-2141 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60350a039
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  • 7
    Electronic Resource
    Electronic Resource
    Reactive ion etching of diamond (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 437-438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reliable means of removing surface layers of diamond is of significant importance for microelectronics as well as for other applications such as polishing of the diamond surface. Preliminary studies using reactive ion etching with O2 and H2 showed etching rates of the order of 560 A(ring)/min for thin carbon films and 350 A(ring)/min for natural type II-A diamonds using 300 eV oxygen ions. Addition of a substantial percentage of Ar to oxygen in the reaction chamber did not affect the etching rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101890
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  • 8
    Electronic Resource
    Electronic Resource
    Doping of diamond by coimplantation of carbon and boron (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1397-1399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have implanted boron ions into insulating natural diamonds which were predamaged by carbon ion implantation in order to enhance the doping efficiency. All implantations were performed at liquid-nitrogen temperature. Subsequent rapid thermal annealing at 1100 °C produced strong new optical absorption bands near 1060 cm−1, and a sharp absorption at 2962 cm−1 (0.37 eV) which is close to that attributed to substitutional boron in type IIB diamond. We obtained resistivity of the order of 100 Ω cm and carrier activation energy of 0.1 eV for a sample implanted with 2×1015 C and 3×1014 B per cm2 , indicating a high substitutional fraction of boron atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101605
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  • 9
    Electronic Resource
    Electronic Resource
    Stability of TaSix-GaAs Schottky barriers in rapid thermal processing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2200-2202 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: n-type GaAs samples coated with TaSi2 and Ta5 Si3 Schottky barrier contacts were heated in a flashlamp rapid thermal processing (RTP) system to temperatures between 600 and 950 °C. We have measured the evaporation of gallium and arsenic through the contact overlayers which results from the decomposition of the GaAs substrate. These decomposition measurements have been correlated with the Schottky barrier behavior as determined from forward-bias current-voltage characteristics and selected capacitance-voltage measurements. The high-temperature stability against decomposition and electrical degradation was superior for Ta5 Si3 contacts relative to TaSi2 contacts. We observed for both contact compositions that the onset temperature for decomposition of GaAs was slightly lower than the maximum temperature for electrical stability. Thus, we found that in some cases substantial decomposition occurred with no effect on the current-voltage characteristics. For example, Ta5 Si3 contacts maintained a stable barrier height of 0.78 eV through 10 s RTP treatments up to 900 °C, in spite of decomposition of at least ten equivalent monolayers of GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100506
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  • 10
    Electronic Resource
    Electronic Resource
    Anomalous oxidation rate of silicon implanted with very high doses of arsenic (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1001-1003 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anomalous increase in oxidation rate was observed during low-temperature thermal oxidation of very high dose (5×1016, 7×1016/cm2) As+ ion implanted silicon. Oxidation of Si at 850 °C was faster than that at 950 °C. This effect was attributed to the snowplowing of arsenic (which was more pronounced at lower temperatures) creating a glassy Si-O-As layer near the Si-SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98812
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