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  • 1
    Electronic Resource
    Electronic Resource
    Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum-well structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2195-2199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous tuning over the entire 8–12 μm wavelength range is demonstrated for the intersubband absorption resonance in n-doped GaAs/AlxGa1−xAs multiple quantum-well structures following partial interdiffusion of the well and barrier layers via rapid thermal annealing. The data indicate that redshifting of the intersubband absorption resonance arises both from interdiffusion-induced modification of the confining potential and from a decrease in the depolarization shift. The latter effect is due in part to a decrease in the free-carrier concentration within the Si-doped quantum wells following rapid thermal annealing. Significant diffusion of the localized Si dopant is also observed over the range of annealing temperatures investigated here. Calculated values of the Al-Ga interdiffusion coefficient, as a function of anneal temperature, indicate that Si diffusion through the heterointerfaces contributes substantially to layer intermixing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350334
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  • 2
    Electronic Resource
    Electronic Resource
    Raman spectroscopic and Hall effect analysis of the free electron concentration in GaAs with ultrahigh silicon doping (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5023-5026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heavily silicon-doped GaAs grown by molecular beam epitaxy has been studied by combined coupled plasmon-phonon mode Raman spectroscopy and Hall effect measurements. Free electron concentrations up to 2×1019 cm−3 have been achieved with the dopant atoms being incorporated dominantly on Ga sites (≥90%) as measured by local vibrational mode Raman spectroscopy. To extract quantitative information from the plasmon-phonon Raman spectra, these spectra have been fitted using the temperature-dependent Lindhard–Mermin dielectric function including the nonparabolicity of the conduction band and wave vector nonconservation due to the absorption of the incident and scattered light. The excellent agreement found between Hall effect and Raman measurements demonstrates that consistent data on dopant incorporation and activation can be obtained, if band structure effects are accounted for appropriately in the analysis of the Raman spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353771
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of heteroepitaxy on the width and frequency of the E2 (high)-phonon line in GaN studied by Raman spectroscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3634-3641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wurtzite GaN layers are commonly grown heteroepitaxially on 6H–SiC or Al2O3 substrates, because of the lack of lattice-matched substrates. We study the influence of these substrates mainly on the E2(high)-phonon Raman line by temperature dependent Raman spectroscopy. We find that the line broadening with sample heating is predominantly caused by intrinsic phonon–phonon scattering in GaN. The small three-phonon contribution as well as the small intrinsic linewidth at low temperature are due to the rather low two-phonon density of states at the E2(high)-phonon energy. Substrates with large lattice mismatch cause inhomogeneous strain and defects in the layers, which lead to a large, temperature independent, line broadening. We show that the temperature shift of the E2(high)-phonon frequency is dominated by the GaN lattice expansion. The lattice of epilayers is strongly modified by the thermal in-plane expansion of the substrate. The degree of relaxation at the growth temperature is reflected by deviation of the E2(high)-line from the intrinsic phonon frequency. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347406
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  • 4
    Electronic Resource
    Electronic Resource
    Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4075-4078 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fundamental relationship between excitonic photoluminescence (PL) intensity and excitation intensity in semiconductor quantum well structures is developed. This relationship is further simplified in the regime of low excitation, and used for a fit function of the Arrhenius plot of time-integrated PL intensity. The proposed four fit parameters are definitely correlated to the distinct characteristic quantities of the sample material, which are the binding energy of excitons, the activation energy, the scattering time, and the background concentration in the well. The validity of the model has been confirmed using our experiments. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290708
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  • 5
    Electronic Resource
    Electronic Resource
    Hot electron capture in highly doped GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4463-4466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hot carrier transport processes in GaAs with δ-like high Si doping have been investigated. In the high electric field region the current density decays with time by as much as 20%, an indication of electron trapping. The electron traps are metastable and the electrons can be released by light or thermal excitation. DX− centers can explain the observations, however, other types of localized electron states cannot be unambiguously excluded. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359476
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of spatial localization of dopant atoms on the spacing of electron subbands in δ-doped GaAs:Si (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 143-145 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using Raman spectroscopy we have investigated the spacing of the electron subbands in nominally δ-doped GaAs structures which show a considerable spread of the silicon dopant atoms along the growth direction. For optical excitation in resonance with the E0+Δ0band gap, spin-density intersubband excitations are observed. For excitation in resonance with the E1 band gap we find a strong enhancement of scattering by collective intersubband plasmon-phonon modes. The measured energy spacings between the electron subbands deviate significantly from what is expected for ideal δ doping. Self-consistent electronic subband calculations taking into account the spread of the dopant atoms along the growth direction, in contrast, yield a good quantitative agreement between calculated and measured subband spacings. This demonstrates the potential of intersubband Raman spectroscopy for the analysis of the spatial localization of dopant atoms in δ-doped structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104954
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  • 7
    Electronic Resource
    Electronic Resource
    Resonant Raman scattering of hydrogenated amorphous carbon: Evidence for π-bonded carbon clusters (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1355-1357 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman spectroscopy has been used to study amorphous hydrogenated carbon films. For films containing both sp2 and sp3 bonded carbon a well-defined high-frequency shift of the main Raman peak is observed with increasing exciting photon energy. This shift is interpreted in terms of scattering from π-bonded carbon clusters which is resonantly enhanced for incident photon energies approaching the π–π* resonance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98677
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  • 8
    Electronic Resource
    Electronic Resource
    Incorporation of Si in δ-doped GaAs studied by local vibrational mode spectroscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 978-980 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering by local vibrational modes has been used to study the incorporation of Si in single δ-doped GaAs layers. Placing the doping spike at different depths underneath the surface, a depth profile of the dopant concentration incorporated on lattice sites has been obtained. For samples grown by molecular beam epitaxy under conditions which are known to lead to a significant broadening of the doping spike, the applied Raman technique reveals the incorporation of Si on Ga sites with a broadening of the Si distribution in excess of 20 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101695
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  • 9
    Electronic Resource
    Electronic Resource
    Resonant Raman scattering of In+-implanted CdTe and Cd0.23Hg0.77Te (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1787-1789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In+ -implanted CdTe and Cd0.23 Hg0.77 Te have been studied by resonant Raman scattering. Dipole-forbidden but defect-induced scattering by one longitudinal optical (LO) phonon as well as Fröhlich-induced two-LO phonon scattering is strongly affected by implantation of 350 keV In+ with doses ranging from 1011 to 5×1014 ions/cm2 . The intensity ratio of the one-LO and the two-LO phonon lines is found to be a measure of the implantation damage in CdTe and in the alloy Cd0.23 Hg0.77 Te. The observed implantation effects on resonant Raman scattering by LO phonons are due to a broadening and an energy shift of the corresponding resonances as demonstrated for the E0 +Δ0 gap resonance in CdTe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101295
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  • 10
    Electronic Resource
    Electronic Resource
    Raman spectroscopic study of residual acceptors in semi-insulating bulk GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 802-807 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic Raman scattering (ERS) has been used to study residual shallow acceptors in undoped semi-insulating (SI) GaAs grown by the liquid-encapsulated Czochralski technique. The dispersion of the cross section for ERS of shallow acceptors, as well as its absolute value, has been measured. It is shown that ERS allows a quantitative analysis of residual shallow acceptors in SI GaAs. Calibration factors for C and Zn acceptors are given. The detection limit of ERS is determined to ∼5×1014 cm−3 for 500-μm-thick standard wafers. Spatially resolved measurements show a systematic variation of the residual acceptor concentration across 2-in. GaAs wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341928
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