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  • 1
    Digitale Medien
    Digitale Medien
    Transmission electron microscopy investigation of dislocation bending by GaAsP/GaAs strained-layer superlattices on heteroepitaxial GaAs/Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5115-5118 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A systematic study, investigating the effects of strained-layer superlattices (SLSs) on threading dislocations present in GaAs/Si heteroepitaxial layers, was conducted. Transmission electron microscope contrast analysis was performed on ∼1% lattice-mismatched GaAs0.72P0.28/GaAs SLSs grown on GaAs/Si substrates.Threading dislocations were found to have Burgers vectors inclined to the GaAs/Si interface. Individual strained layers ranging in thickness from 100 to 250 A(ring) were observed to have negligible effect on dislocation bending. Instead, dislocation bending occurred primarily at the first and last interfaces of the SLS packets. Similarly, effective dislocation bending was observed using 1000 A(ring) layers. Threading dislocation density close to the GaAs/Si heterointerface was found to depend on the SLS packet proximity to the interface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347049
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  • 2
    Digitale Medien
    Digitale Medien
    Volume plasmons in porous silicon (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1774-1776 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Plasmon loss features of porous silicon (PS) layers consisting of Si nanoparticles with average diameters of 3.6–4.5 nm were studied using x-ray photoelectron spectroscopy. The volume plasmons of the Si nanoparticles in the as-prepared PS layers have the same energy as that of bulk Si (17.4 eV). The surfaces of the PS layers were sputter etched by argon (Ar) ion bombardment to remove any hydrogen passivation. The plasmon energy for the surface-sputtered PS layers increases from 17.4 eV to either ∼17.9 or 18.5 eV depending on the size of the nanoparticles, while the energy for bulk Si remains the same after the surface sputtering. A qualitative model with the plasma frequency modified from the free electron model was introduced to explain the observed characteristic features in the volume plasmons. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.370964
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  • 3
    Digitale Medien
    Digitale Medien
    Photo-oxidation of germanium nanostructures deposited by the cluster-beam evaporation technique (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1518-1521 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The photo-oxidation of germanium (Ge) nanostructures deposited by the cluster-beam evaporation technique is systematically studied. The significant photo-oxidation is found in the Ge-liquid nitrogen temperature (LNT) film, which was deposited on substrates whose temperature was kept at liquid nitrogen temperature during the deposition but not in the Ge-RT film, whose substrate temperature was room temperature. The difference in photo-oxidation of both types of Ge films is explained by denseness of Ge nanostructures. The threshold photon energy for photo-oxidation is close to the optical band gap estimated from the absorption spectrum of the as-deposited Ge-LNT film. The modified electron-active oxidation model is proposed to explain the photo-oxidation of Ge nanostructures. It is also hypothesized that the final size of Ge cores is determined by the incident photon energy and that the size of Ge cores becomes more uniform for prolonged photo-oxidation. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363917
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  • 4
    Digitale Medien
    Digitale Medien
    Improved characteristics of GaAs metal-semiconductor field-effect transistors on Si substrates back-coated with SiO2 by metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1265-1267 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaAs metal-semiconductor field-effect transistors (MESFETs) on Si substrates back-coated with SiO2 grown at high temperature by metalorganic chemical vapor deposition have shown good pinch-off and suppressed sidegating. The SiO2 back-coating suppresses Si incorporation into an undoped GaAs layer during growth, and use of such an undoped layer with a low electron concentration beneath the channel layer improves a pinch-off characteristic. Higher growth temperature also improves crystallinity of GaAs layers grown on Si and helps to suppress the sidegating effect of GaAs MESFETs. The maximum transconductance of 160 mS/mm and the K value of 46.8 mA/V2 mm have been obtained for a MESFET with 2.5 μm gate length.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104331
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  • 5
    Digitale Medien
    Digitale Medien
    Metalorganic chemical vapor deposition growth of undoped GaAs with a low electron concentration on a Si substrate (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2669-2671 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have successfully grown an undoped GaAs layer with a low electron concentration on Si by metalorganic chemical vapor desposition (MOCVD). The back and side edges of the Si substrate were covered with a Si3N4/SiO2 stacked layer to suppress Si incorporation into GaAs by the gas phase transport mechanism during the MOCVD growth. A 3-μm-thick undoped GaAs layer with an electron concentration of 3×1014 cm−3, as low as the electron concentration of a GaAs layer grown on a GaAs substrate, was grown on the Si substrate even at 750 °C.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103796
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  • 6
    Digitale Medien
    Digitale Medien
    Density of states of the tetragonal-phase germanium nanocrystals using x-ray photoelectron spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2460-2462 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The valence-band x-ray photoelectron spectroscopy (XPS) spectra of the Ge nanocrystals deposited by the cluster-beam evaporation technique were studied, and suggest the presence of the tetragonal crystal structure (ST-12) of Ge in the Ge nanocrystals. Although the ST-12 structure of Ge is known to be metastable and is transformed to the diamond structure, which is the crystal structure of bulk Ge, at relatively low temperatures, the XPS and absorption spectra of the Ge nanocrystals annealed at various temperatures show that the obtained ST-12 structure is thermally stable. The critical temperature for the phase transformation of the Ge nanocrystals is found to be higher than 700 °C. These results are consistent with our earlier study using Raman spectroscopy. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.121382
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  • 7
    Digitale Medien
    Digitale Medien
    New mechanism for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1674-1676 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new mechanism is proposed for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition. This mechanism involves gas phase transport of the Si to the heteroepitaxial layers during growth. This mode of Si uptake could operate in addition to the previously proposed mechanism of Si incorporation by enhanced diffusion from the heterointerface through defects in the GaAs layer.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102232
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  • 8
    Digitale Medien
    Digitale Medien
    Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2090-2092 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Enhanced incorporation of Si is observed in the metalorganic chemical vapor deposition of homoepitaxial GaAs layers, grown in the presence of Si substrates placed adjacent to the GaAs substrates in the reactor. The electron concentrations of the GaAs layers are a function of the proximity to the Si substrates and the growth temperature, and do not appear to depend on the location of the Si substrates relative to the flow direction of the carrier gases and the type of reactor used for the growth, i.e., horizontal or vertical. Reduction in electron concentrations is observed when Si substrates are covered with passivating layers of either SiO2 or Si3N4. These results provide evidence of a gas phase reaction and transport of Si to the growing GaAs layers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102092
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  • 9
    Digitale Medien
    Digitale Medien
    Critical thickness anisotropy in highly carbon-doped p-type (100)GaAs layers grown by metalorganic molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 60-62 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The formation of misfit dislocations at the (100)GaAs substrate interfaces of thick highly carbon-doped p-type GaAs layers grown by metalorganic molecular beam epitaxy, was investigated using x-ray diffraction and transmission electron microscopy. The misfit dislocation lines were observed to be all aligned along one of the 〈011〉 directions on the substrate and were identified as being ‘β' type. Enhanced migration of β dislocations in p-type GaAs coupled with heterogeneous dislocation loop formation at clusters of partially dissociated (CH3)3Ga molecules is proposed as a probable cause of the anisotropy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105522
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  • 10
    Digitale Medien
    Digitale Medien
    Tetragonal germanium flims deposited by the cluster-beam evaporation technique (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3176-3178 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Germanium (Ge) films have been fabricated by the cluster-beam technique. In transmission electron microscope (TEM) micrographs, the film deposited on a substrate at room temperature appears smooth and uniform, while that deposited at liquid nitrogen temperature consists of nanostructures with diameters from 4 to 40 nm. The x-ray diffraction (XRD) patterns show that the crystalline structure for either deposition temperature is not the ordinary diamond structure but is tetragonal. The absorption spectra are distinct from that of bulk Ge. The photo-oxidized Ge nanostructures exhibit blue light emission, which is strong enough to be recognized with the naked eye even under a room light. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113714
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