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  • 11
    Electronic Resource
    Electronic Resource
    Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6908-6913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallinity of GaAs grown on Si with various intermediate layers by metalorganic chemical vapor deposition and characteristics of Schottky diodes fabricated on the grown GaAs/Si have been studied. The GaAs/Si with an Al0.55Ga0.45P intermediate layer has both good crystallinity, x-ray full width at half maximum of 188 arc sec, and a smooth surface. The Schottky diode fabricated on the GaAs/Si with an Al0.55Ga0.45P intermediate layer also shows good forward and reverse current-voltage characteristics with an ideality factor of 1.06, as good as for an n-type GaAs substrate. However, a relatively large leakage current is observed under reverse and small forward bias. This leakage current is caused by generation and recombination through the centers related to dislocations in the GaAs/Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345083
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  • 12
    Electronic Resource
    Electronic Resource
    Nucleation and defect generation in lattice matched and mismatched heteroepitaxial layers in the GaAs/AlxGa1−xP/Si system (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2441-2446 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heteroepitaxial growth of GaAs on Si substrates at 700 °C using AlxGa1−xP buffer layers grown at 900 °C by metalorganic chemical vapor deposition is studied using transmission electron microscopy. This GaAs/AlxGa1−xP/Si system is unique in that it allows one to study separately the influence of lattice-mismatch (GaAs/AlxGa1−xP) and polar/nonpolar (AlxGa1−xP/Si) effects on the heteroepitaxial growth of compound semiconductors. Island-type nucleation is observed for both effects acting independently, though three-dimensional growth due to the polar/nonpolar effect (AlxGa1−xP/Si) can be suppressed by increasing the Al content (x〉0.2) of the AlxGa1−xP layers. The nucleation of the GaAs appears to be modified by the nature of the AlxGa1−xP buffer layers, i.e., whether they are in the form of islands or planar layers. Single-crystal, 3-μm-thick layers of GaAs can be grown directly at 700 °C on the AlxGa1−xP buffer layers without resorting to a two-step technique. This result demonstrates that purely lattice-mismatch or polar/nonpolar effects cannot disrupt the crystallinity of the compound semiconductor layer. The surface morphology as well as the nature of defects generated in the 3-μm-thick GaAs films can be correlated to the nucleation mode of the GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345490
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  • 13
    Electronic Resource
    Electronic Resource
    Volume plasmons in porous silicon (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1774-1776 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasmon loss features of porous silicon (PS) layers consisting of Si nanoparticles with average diameters of 3.6–4.5 nm were studied using x-ray photoelectron spectroscopy. The volume plasmons of the Si nanoparticles in the as-prepared PS layers have the same energy as that of bulk Si (17.4 eV). The surfaces of the PS layers were sputter etched by argon (Ar) ion bombardment to remove any hydrogen passivation. The plasmon energy for the surface-sputtered PS layers increases from 17.4 eV to either ∼17.9 or 18.5 eV depending on the size of the nanoparticles, while the energy for bulk Si remains the same after the surface sputtering. A qualitative model with the plasma frequency modified from the free electron model was introduced to explain the observed characteristic features in the volume plasmons. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370964
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  • 14
    Electronic Resource
    Electronic Resource
    Correlation between the dielectric constant and porosity of nanoporous silica thin films deposited by the gas evaporation technique (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3140-3142 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanoporous silica thin films with low dielectric constants were deposited by gas evaporation of SiO2 nanoparticles in an argon atmosphere. With increasing gas pressure during the evaporation, the dielectric constant decreases, while the porosity increases. The correlation between the dielectric constant and porosity is well modeled by a serial connection of two capacitors, one with air and the other with SiO2 as the dielectric medium. This suggests that the dielectric constant of the nanoporous silica thin film using the gas evaporation technique is more effectively lowered by forming "uniformly" distributed voids of closed gaps than those of the nanoporous silica films with pores extending from the back to front surface. Therefore, the former nanoporous silica thin film requires less porosity to obtain a low dielectric constant and is regarded as an ideal low-k material. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415042
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  • 15
    Electronic Resource
    Electronic Resource
    Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2896-2898 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The frequently observed dc drain current compression of AlGaN/GaN modulation doped field-effect transistors is associated with partial loss of the two-dimensional electron gas caused by electron trapping. The behavior of the temperature-dependent electron concentration and persistent photoconductivity at low temperature in the AlGaN/GaN modulation doped heterostructure are indicative of the presence of DX centers in the AlGaN layer. Deep-level transient spectroscopy of the drain current reveals carrier trapping with activation energy of 0.28 eV. However, this value appears to be too small to explain the compression of the dc drain current or to attribute these traps to DX centers in AlGaN. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367274
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  • 16
    Electronic Resource
    Electronic Resource
    Coulomb-blockade effect observed at room temperature in Ge nanocrystalline films deposited by the cluster-beam evaporation technique (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 445-447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature-dependent current–voltage (I–V) characteristics have been studied across the thickness of Ge nanocrystalline films prepared by the cluster beam evaporation technique. It is found that a film with a thickness of 30 nm, deposited on a substrate kept at 77 K, does not exhibit any distinct step-like feature in the I–V characteristics at room temperature. However, with the lowering of the temperature, a "Coulomb gap" is observed and a pronounced step-like feature appear in the I–V characteristics suggesting the Coulomb blockade (CB) effect. It is hypothesized that the observed CB effect in these nanocrystalline thin films results from a very highly selective electron transport process where the electron transport is dominated by one local well-defined current path with the largest conductance. The result of similar measurements on a photo-oxidized sample, which shows a signature of a step-like feature in the I–V characteristics, even at room temperature, supports this hypothesis. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125782
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  • 17
    Electronic Resource
    Electronic Resource
    Tetragonal germanium flims deposited by the cluster-beam evaporation technique (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3176-3178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Germanium (Ge) films have been fabricated by the cluster-beam technique. In transmission electron microscope (TEM) micrographs, the film deposited on a substrate at room temperature appears smooth and uniform, while that deposited at liquid nitrogen temperature consists of nanostructures with diameters from 4 to 40 nm. The x-ray diffraction (XRD) patterns show that the crystalline structure for either deposition temperature is not the ordinary diamond structure but is tetragonal. The absorption spectra are distinct from that of bulk Ge. The photo-oxidized Ge nanostructures exhibit blue light emission, which is strong enough to be recognized with the naked eye even under a room light. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113714
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  • 18
    Electronic Resource
    Electronic Resource
    Cyclic shifts in the photoluminescence spectra of the porous Si in HF (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1644-1646 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) measurements were carried out on the porous Si layers kept in the HF solution. The PL peak around 700 nm, usually observed in the PL spectrum of the porous Si layer in the air, was no longer detected. This evidence suggests that the origin of the visible light luminescence from the porous Si layer in the air is different from that in the HF solution and may be associated with the presence of oxygen at the surface. Furthermore, it is interesting to find the cyclic shifts in the PL spectra between green and orange by turning the light on and off to illuminate the porous Si layer in the HF solution. This unique behavior is attributed to photochemical etching under illumination and chemical etching of the porous Si layer in the dark. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113879
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  • 19
    Electronic Resource
    Electronic Resource
    Photo-oxidation of germanium nanostructures deposited by the cluster-beam evaporation technique (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1518-1521 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photo-oxidation of germanium (Ge) nanostructures deposited by the cluster-beam evaporation technique is systematically studied. The significant photo-oxidation is found in the Ge-liquid nitrogen temperature (LNT) film, which was deposited on substrates whose temperature was kept at liquid nitrogen temperature during the deposition but not in the Ge-RT film, whose substrate temperature was room temperature. The difference in photo-oxidation of both types of Ge films is explained by denseness of Ge nanostructures. The threshold photon energy for photo-oxidation is close to the optical band gap estimated from the absorption spectrum of the as-deposited Ge-LNT film. The modified electron-active oxidation model is proposed to explain the photo-oxidation of Ge nanostructures. It is also hypothesized that the final size of Ge cores is determined by the incident photon energy and that the size of Ge cores becomes more uniform for prolonged photo-oxidation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363917
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  • 20
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition growth of undoped GaAs with a low electron concentration on a Si substrate (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2669-2671 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown an undoped GaAs layer with a low electron concentration on Si by metalorganic chemical vapor desposition (MOCVD). The back and side edges of the Si substrate were covered with a Si3N4/SiO2 stacked layer to suppress Si incorporation into GaAs by the gas phase transport mechanism during the MOCVD growth. A 3-μm-thick undoped GaAs layer with an electron concentration of 3×1014 cm−3, as low as the electron concentration of a GaAs layer grown on a GaAs substrate, was grown on the Si substrate even at 750 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103796
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