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  • 1
    Electronic Resource
    Electronic Resource
    Photo-oxidation of germanium nanostructures deposited by the cluster-beam evaporation technique (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1518-1521 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photo-oxidation of germanium (Ge) nanostructures deposited by the cluster-beam evaporation technique is systematically studied. The significant photo-oxidation is found in the Ge-liquid nitrogen temperature (LNT) film, which was deposited on substrates whose temperature was kept at liquid nitrogen temperature during the deposition but not in the Ge-RT film, whose substrate temperature was room temperature. The difference in photo-oxidation of both types of Ge films is explained by denseness of Ge nanostructures. The threshold photon energy for photo-oxidation is close to the optical band gap estimated from the absorption spectrum of the as-deposited Ge-LNT film. The modified electron-active oxidation model is proposed to explain the photo-oxidation of Ge nanostructures. It is also hypothesized that the final size of Ge cores is determined by the incident photon energy and that the size of Ge cores becomes more uniform for prolonged photo-oxidation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363917
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  • 2
    Electronic Resource
    Electronic Resource
    Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6908-6913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallinity of GaAs grown on Si with various intermediate layers by metalorganic chemical vapor deposition and characteristics of Schottky diodes fabricated on the grown GaAs/Si have been studied. The GaAs/Si with an Al0.55Ga0.45P intermediate layer has both good crystallinity, x-ray full width at half maximum of 188 arc sec, and a smooth surface. The Schottky diode fabricated on the GaAs/Si with an Al0.55Ga0.45P intermediate layer also shows good forward and reverse current-voltage characteristics with an ideality factor of 1.06, as good as for an n-type GaAs substrate. However, a relatively large leakage current is observed under reverse and small forward bias. This leakage current is caused by generation and recombination through the centers related to dislocations in the GaAs/Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345083
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  • 3
    Electronic Resource
    Electronic Resource
    Volume plasmons in porous silicon (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1774-1776 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasmon loss features of porous silicon (PS) layers consisting of Si nanoparticles with average diameters of 3.6–4.5 nm were studied using x-ray photoelectron spectroscopy. The volume plasmons of the Si nanoparticles in the as-prepared PS layers have the same energy as that of bulk Si (17.4 eV). The surfaces of the PS layers were sputter etched by argon (Ar) ion bombardment to remove any hydrogen passivation. The plasmon energy for the surface-sputtered PS layers increases from 17.4 eV to either ∼17.9 or 18.5 eV depending on the size of the nanoparticles, while the energy for bulk Si remains the same after the surface sputtering. A qualitative model with the plasma frequency modified from the free electron model was introduced to explain the observed characteristic features in the volume plasmons. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370964
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  • 4
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy investigation of dislocation bending by GaAsP/GaAs strained-layer superlattices on heteroepitaxial GaAs/Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5115-5118 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study, investigating the effects of strained-layer superlattices (SLSs) on threading dislocations present in GaAs/Si heteroepitaxial layers, was conducted. Transmission electron microscope contrast analysis was performed on ∼1% lattice-mismatched GaAs0.72P0.28/GaAs SLSs grown on GaAs/Si substrates.Threading dislocations were found to have Burgers vectors inclined to the GaAs/Si interface. Individual strained layers ranging in thickness from 100 to 250 A(ring) were observed to have negligible effect on dislocation bending. Instead, dislocation bending occurred primarily at the first and last interfaces of the SLS packets. Similarly, effective dislocation bending was observed using 1000 A(ring) layers. Threading dislocation density close to the GaAs/Si heterointerface was found to depend on the SLS packet proximity to the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347049
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  • 5
    Electronic Resource
    Electronic Resource
    Nucleation and defect generation in lattice matched and mismatched heteroepitaxial layers in the GaAs/AlxGa1−xP/Si system (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2441-2446 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heteroepitaxial growth of GaAs on Si substrates at 700 °C using AlxGa1−xP buffer layers grown at 900 °C by metalorganic chemical vapor deposition is studied using transmission electron microscopy. This GaAs/AlxGa1−xP/Si system is unique in that it allows one to study separately the influence of lattice-mismatch (GaAs/AlxGa1−xP) and polar/nonpolar (AlxGa1−xP/Si) effects on the heteroepitaxial growth of compound semiconductors. Island-type nucleation is observed for both effects acting independently, though three-dimensional growth due to the polar/nonpolar effect (AlxGa1−xP/Si) can be suppressed by increasing the Al content (x〉0.2) of the AlxGa1−xP layers. The nucleation of the GaAs appears to be modified by the nature of the AlxGa1−xP buffer layers, i.e., whether they are in the form of islands or planar layers. Single-crystal, 3-μm-thick layers of GaAs can be grown directly at 700 °C on the AlxGa1−xP buffer layers without resorting to a two-step technique. This result demonstrates that purely lattice-mismatch or polar/nonpolar effects cannot disrupt the crystallinity of the compound semiconductor layer. The surface morphology as well as the nature of defects generated in the 3-μm-thick GaAs films can be correlated to the nucleation mode of the GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345490
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  • 6
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition growth of undoped GaAs with a low electron concentration on a Si substrate (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2669-2671 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown an undoped GaAs layer with a low electron concentration on Si by metalorganic chemical vapor desposition (MOCVD). The back and side edges of the Si substrate were covered with a Si3N4/SiO2 stacked layer to suppress Si incorporation into GaAs by the gas phase transport mechanism during the MOCVD growth. A 3-μm-thick undoped GaAs layer with an electron concentration of 3×1014 cm−3, as low as the electron concentration of a GaAs layer grown on a GaAs substrate, was grown on the Si substrate even at 750 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103796
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  • 7
    Electronic Resource
    Electronic Resource
    New mechanism for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1674-1676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mechanism is proposed for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition. This mechanism involves gas phase transport of the Si to the heteroepitaxial layers during growth. This mode of Si uptake could operate in addition to the previously proposed mechanism of Si incorporation by enhanced diffusion from the heterointerface through defects in the GaAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102232
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  • 8
    Electronic Resource
    Electronic Resource
    Improved characteristics of GaAs metal-semiconductor field-effect transistors on Si substrates back-coated with SiO2 by metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1265-1267 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs metal-semiconductor field-effect transistors (MESFETs) on Si substrates back-coated with SiO2 grown at high temperature by metalorganic chemical vapor deposition have shown good pinch-off and suppressed sidegating. The SiO2 back-coating suppresses Si incorporation into an undoped GaAs layer during growth, and use of such an undoped layer with a low electron concentration beneath the channel layer improves a pinch-off characteristic. Higher growth temperature also improves crystallinity of GaAs layers grown on Si and helps to suppress the sidegating effect of GaAs MESFETs. The maximum transconductance of 160 mS/mm and the K value of 46.8 mA/V2 mm have been obtained for a MESFET with 2.5 μm gate length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104331
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  • 9
    Electronic Resource
    Electronic Resource
    Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2090-2092 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced incorporation of Si is observed in the metalorganic chemical vapor deposition of homoepitaxial GaAs layers, grown in the presence of Si substrates placed adjacent to the GaAs substrates in the reactor. The electron concentrations of the GaAs layers are a function of the proximity to the Si substrates and the growth temperature, and do not appear to depend on the location of the Si substrates relative to the flow direction of the carrier gases and the type of reactor used for the growth, i.e., horizontal or vertical. Reduction in electron concentrations is observed when Si substrates are covered with passivating layers of either SiO2 or Si3N4. These results provide evidence of a gas phase reaction and transport of Si to the growing GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102092
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  • 10
    Electronic Resource
    Electronic Resource
    Correlation between the dielectric constant and porosity of nanoporous silica thin films deposited by the gas evaporation technique (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3140-3142 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanoporous silica thin films with low dielectric constants were deposited by gas evaporation of SiO2 nanoparticles in an argon atmosphere. With increasing gas pressure during the evaporation, the dielectric constant decreases, while the porosity increases. The correlation between the dielectric constant and porosity is well modeled by a serial connection of two capacitors, one with air and the other with SiO2 as the dielectric medium. This suggests that the dielectric constant of the nanoporous silica thin film using the gas evaporation technique is more effectively lowered by forming "uniformly" distributed voids of closed gaps than those of the nanoporous silica films with pores extending from the back to front surface. Therefore, the former nanoporous silica thin film requires less porosity to obtain a low dielectric constant and is regarded as an ideal low-k material. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415042
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