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  • 1
    Digitale Medien
    Digitale Medien
    Photorefractive InGaAs/GaAs multiple quantum wells in the Franz–Keldysh geometry (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5889-5896 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We fabricate semi-insulating InGaAs/GaAs multiple quantum wells and observe the excitonic enhancement of the photorefractivity in the Franz–Keldysh geometry at wavelengths of 0.92–0.94 μm. A maximum two-wave mixing gain of 138 cm−1 and a maximum diffraction efficiency of 1.5×10−4 are obtained. The saturation intensity and the spatial resolution are also measured by four-wave mixing. The diffraction efficiency is saturated at a high external electric field. The dominant cause of this saturation is the deviation of the excitonic electroabsorption from its quadratic law. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1370364
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  • 2
    Digitale Medien
    Digitale Medien
    Observation of a single photoluminescence peak from a single quantum dot (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3257-3259 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We observed a very sharp photoluminescence peak from a single GaAs/AlGaAs quantum dot structure by using a microphotoluminescence measurement technique. The spectral linewidth was more suppressed by decreasing the excitation laser power, which is mainly due to reduction of the filling effect of quantized energy levels. The minimal spectral linewidth with low excitation laser power was 0.9 meV. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114890
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  • 3
    Digitale Medien
    Digitale Medien
    One-dimensional exciton diffusion in GaAs quantum wires (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1535-1537 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: One-dimensional diffusion of excitons in GaAs quantum wires was observed by using microphotoluminescence measurements at low temperature. The observed diffusion length increased with decreasing wire width from 30 to 15 nm, and decreased from 15 to 7 nm, where maximum diffusion length was about 4 μm for the 15 nm quantum wire, which is the largest value so far reported. It is considered that the change of diffusion length versus wire width is caused by the competition between one-dimensional character and the interface fluctuation. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114484
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  • 4
    Digitale Medien
    Digitale Medien
    Dependence of lasing characteristics of quantum well lasers on substrate orientation: Tight-binding theory (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 881-883 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Band-structure analysis using the tight-binding method indicates that there is a significant dependence of lasing properties of GaAs/AlGaAs quantum well lasers on substrate orientation, which suggests the importance of choosing the substrate orientation carefully for improving lasing properties. These results are mainly due to changes in the in-plane effective mass of the heavy hole.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104466
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  • 5
    Digitale Medien
    Digitale Medien
    Enhanced and inhibited spontaneous emission in GaAs/AlGaAs vertical microcavity lasers with two kinds of quantum wells (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2339-2341 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigate enhanced and inhibited spontaneous emission effects in a vertical λ-microcavity structure having two kinds of quantum wells (QWs) with the thicknesses of 76 and 114 A(ring), measuring both photoluminescence intensity and carrier lifetime. The 76 and 114 A(ring) QWs are placed at the maximum and at the nodes of the emitted standing wave in the microcavity, respectively. When the λ-microcavity mode is tuned to the quantized band-gap energy of the 76 A(ring) QWs (enhanced condition), the PL intensity is enhanced compared with the case that the cavity mode is tuned to the quantized band-gap energy of the 114 A(ring) QWs (inhibited condition). In addition, the increase of the carrier lifetime is also observed under the inhibited condition. These results demonstrate existence of enhanced and inhibited spontaneous emission effects in the microcavity structures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104918
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  • 6
    Digitale Medien
    Digitale Medien
    Wavelength switching of picosecond pulse (〈10 ps) in a quantum well laser and its all-optical logic gating operations (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1709-1711 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We developed a novel technique to switch the lasing wavelength of picosecond pulses in an optically pumped quantum well laser by utilizing spatially localized and homogeneous excitation. The applications of these phenomena to ultrafast logic gating operations are successfully demonstrated.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105116
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  • 7
    Digitale Medien
    Digitale Medien
    Picosecond dynamics in gain-switched uncoupled and coupled quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2064-2066 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We experimentally demonstrate the importance of two-dimensional carrier confinement for picosecond dynamics in gain-switched quantum well lasers, measuring time-resolved spectra of gain-switched quantum well (QW) lasers with coupled QWs and uncoupled QWs. The result indicates that an extremely short pulse (〈2 ps) is generated in the uncoupled QW lasers. On the other hand, the pulse duration is about 10 ps in the coupled QW lasers in which the two-dimensional confinement effect is significantly reduced owing to the miniband formation. These results demonstrate the importance of the two-dimensional confinement of carriers for the short pulse generation in the semiconductor lasers. The measured dynamic spectral shift of the gain-switched QW lasers also confirm the significant role of the two-dimensional carrier confinement.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105011
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  • 8
    Digitale Medien
    Digitale Medien
    Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal-organic chemical-vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 533-535 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Successful fabrication of thin GaAs quantum wires (120–200 A(ring))×(200–300 A(ring)) by a novel metal-organic chemical-vapor-deposition growth technique is reported. The GaAs quantum wires were grown on a V groove formed by two GaAs triangular prisms which were selectively grown on SiO2 masked substrates. The V groove has a very sharp corner at the bottom, which results in reduction of the effective width of the quantum wire structures. The measurement of photoluminescence and photoluminescence excitation spectra with polarization dependence indicate the existence of the quantized state in the quantum wires.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350695
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  • 9
    Digitale Medien
    Digitale Medien
    In situ patterning of contamination resists in metalorganic chemical vapor deposition for fabrication of quantum wires (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2372-2374 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We demonstrated a novel selective growth technology for the fabrication of quantum microstructures utilizing in situ patterning of contamination resist in the metalorganic chemical vapor deposition system. The results indicate that a GaAs quasi-quantum wire structure, as narrow as 700 nm, can be successfully fabricated, showing that this technique may be applied to fabrication technologies for quantum microstructures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104874
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  • 10
    Digitale Medien
    Digitale Medien
    Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8349-8352 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report structural and optical properties of GaSb/GaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. The QDs, with nanometer-scale dimensions, were characterized by atomic force microscopy. Furthermore, in photoluminescence (PL) measurements the feature from the QDs was observed at ∼1.1 eV, clearly separated from that of the wetting layer at ∼1.3 eV. With increasing excitation power, the peak from the QDs displayed a large shift towards higher energy. In addition, the temperature dependence of PL yielded a large thermal activation energy, 130 meV, confirming the strong localization of excitons in the QDs. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.370622
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