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Digitale Medien

The Role of Pulmonary Surfactant in SIDS (1988)

GIBSON, R. A. ; McMURCHIE, E. J.

Oxford, UK : Blackwell Publishing Ltd

Annals of the New York Academy of Sciences 533 (1988), S. 0

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ISSN: 1749-6632

Quelle: Blackwell Publishing Journal Backfiles 1879-2005

Thema: Allgemeine Naturwissenschaft

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1111/j.1749-6632.1988.tb37258.x

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Digitale Medien

The characteristics of high current amorphous silicon diodes (1980)

Gibson, R. A. ; Comber, P. G. ; Spear, W. E.

Springer

Applied physics 21 (1980), S. 307-311

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ISSN: 1432-0630

Schlagwort(e): 61.40 ; 84.60

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Amorphous siliconp−n junctions with various doping profiles have been prepared by the glow discharge technique and the effect of the barrier profile on electrical properties investigated. Current densities of up to 40 A cm−2 with rectification ratios of 104–105 were obtained withn +−ν−p + structures. The diode quality factor has also been investigated, both in the dark and under illumination.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00895919

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A spectroscopic investigation of growth regimes in silane-ammonia discharges used for plasma nitride deposition (1991)

Hicks, S. E. ; Gibson, R. A. G.

Springer

Plasma chemistry and plasma processing 11 (1991), S. 455-472

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ISSN: 1572-8986

Schlagwort(e): PECVD ; deposition ; amorphous silicon nitride ; a-SiN : H ; silane ; ammonia ; growth regimes ; aminosilanes ; OES

Quelle: Springer Online Journal Archives 1860-2000

Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein

Notizen: Abstract Using optical emission spectroscopy (OES) we have been able to distinguish three operating regimes for the ammonia-silane glow discharge used in plasma nitride deposition. By monitoring the deposition rate and analyzing the structure and composition of thea-SiN: H films it has been possible to correlate these three plasma regimes with three distinct deposition mechanisms. The growth plasma may be tuned to each of these regimes by varying one or more of the following three external parameters: ammonia mole fraction, r .f. power, and gas flow rate. Choice of these parameters allows control of the NH n radical concentration and the residence time in the reactor, and hence control over the number of gas-phase SiH n -NH n radical-radical reactions. Thus OES makes control of the film deposition mechanism possible.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01447159

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