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  • 1
    Digitale Medien
    Digitale Medien
    Mechanisms for Si dopant migration in molecular beam epitaxy AlxGa1−xAs (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4056-4060 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Because of well-known surface segregation effects in molecular beam epitaxy growth, Si dopant atoms deposited as thin layers in AlxGa1−xAs typically become distributed over many atomic layers. We have measured the Si depth distributions in (100) and (311)A samples grown at temperatures between 420 and 655 °C, with Al fraction x=0, 0.1, and 0.32. The surface migration decay length Λ for a Si atom on a growing (100) surface is strongly temperature dependent but nearly independent of x, with Λ(approximate)8 nm at 655 °C. The x=0(100) measurements show evidence for a minimum value Λ(approximate)0.6 nm at low temperatures and a maximum value Λ(approximate)8.5 nm at high temperatures. The data are in accord with a thermally activated surface segregation process with activation energy (1.8±0.4) eV acting in parallel with a temperature independent surface segregation mechanism. The (311)A surface shows Λ=(3.3±0.1) nm virtually independent of temperature for x=0. The Si decay length for the (311)A surface strongly increases with x, and for x=0.32 there is no significant difference in Λ for the (100) and (311)A surfaces. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1308073
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  • 2
    Digitale Medien
    Digitale Medien
    Anionic linear chain iridium carbonyl halides (1976)
    s.l. : American Chemical Society
    Inorganic chemistry 15 (1976), S. 514-519 
    Details
    ISSN: 1520-510X
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ic50157a005
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  • 3
    Digitale Medien
    Digitale Medien
    Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6039-6041 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A partial monolayer of silane, SiH4, adsorbed on a GaAs(100) surface at 40 K may be fixed in a desired pattern by irradiation with an electron microbeam, and then covered in situ by GaAs grown by molecular-beam epitaxy. The initial rate of Si coverage under irradiation by 1.5 keV electrons is (0.031±0.005) Si per electron per monolayer of silane. Applications include the in situ fabrication via patterned doping of circuit elements and structures with interesting electronic properties. As an example, we have made an isolated buried channel field-effect transistor and measured its properties. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360542
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  • 4
    Digitale Medien
    Digitale Medien
    Atomically precise superlattice potential imposed on a two-dimensional electron gas (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 726-728 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have been able to fabricate a two-dimensional electron gas containing an atomically precise, lateral Kronig–Penney potential of 102 A(ring) periodicity. The structure was formed by modulation-doped molecular beam epitaxy overgrowth on the cleaved edge of a 71 A(ring) GaAs/31 A(ring) AlGaAs compositional superlattice. Low-temperature magnetotransport reveals clear quantum Hall characteristics. From the onset of the Shubnikov–de Haas oscillations at 0.25 T we deduce a lower limit of the mobility of μ(approximately-greater-than)40 000 cm2/V s at an electron density of 3.0×1011 cm−2 and infer that the carriers are crossing more than 200 GaAs/AlGaAs interfaces without losing phase coherence.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104528
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  • 5
    Digitale Medien
    Digitale Medien
    Si dopant migration and the AlGaAs/GaAs inverted interface (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2258-2260 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electron transport in quantum well modulation δ doped on either the normal or the inverted side has revealed the major cause of the long-puzzling inferior transport characteristics of the inverted interface. For growth conditions optimized for best transport with normal-side doping, we find migration of the Si dopant toward the inverted interface during growth to be the primary reason for the reduced inverted well mobility. This new understanding has allowed us to grow modulation-doped inverted quantum wells of unprecedented quality having electron mobilities as high as 2.4×106 cm2/V s at 4.2 K and 3.0×106 cm2/V s at 1.0 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104915
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  • 6
    Digitale Medien
    Digitale Medien
    Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °C (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 65-67 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The low-temperature limit to GaAs molecular beam epitaxy (MBE) is studied at temperatures from 250 °C to room temperature. Using transmission electron microscopy of layers grown under a variety of conditions we show that, as for Si MBE, there is an epitaxial thickness hepi at which a growing epitaxial layer becomes amorphous. The temperature, growth rate, composition, and defect density all appear to be constant during growth of the epitaxial layer, and (in analogy with Si MBE) we tentatively associate the breakdown of epitaxy at hepi with roughening of the growth surface. We demonstrate that hepi depends strongly on composition, increasing rapidly with Ga/As ratio at fixed temperature. At fixed Ga/As ratio, hepi shows an abrupt increase from 〈200 to (approximately-greater-than)5000 A(ring) at 210 °C. The results have implications for the growth of GaAs/GaAs for high-speed photodetectors, as well as possible applications to GaAs/Si heteroepitaxy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104446
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  • 7
    Digitale Medien
    Digitale Medien
    Field-induced resonant tunneling between parallel two-dimensional electron systems (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1497-1499 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quantum well structure has been induced by the action of an external Schottky gate field. Using one 2D electron gas as source and the other as drain, the tunnel conductance between them shows a strong resonance when the gate field aligns the ground subband edges of the two quantum wells.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105157
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  • 8
    Digitale Medien
    Digitale Medien
    Noninteracting beams of ballistic two-dimensional electrons (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 263-265 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We demonstrate that two beams of two-dimensional ballistic electrons in a GaAs-AlGaAs heterostructure can penetrate each other with negligible mutual interaction analogous to the penetration of two optical beams. This allows electrical signal channels to intersect in the same plane with negligible crosstalk between the channels.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104683
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  • 9
    Digitale Medien
    Digitale Medien
    High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant-induced disorder is eliminated (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1262-1264 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have fabricated field effect transistors with undoped GaAs channels, undoped AlxGa1−xAs barriers, and either n+GaAs or epitaxial Al gates. Low resistance ohmic contacts are made separately to the gate and channel in samples with 250 A(ring) barriers and in which the depth of the channel below the top surface is 900 A(ring). Because electrons in the channel are neutralized by conducting charge on the gate, they do not experience the dopant-induced disorder inevitable in modulation doped structures. Electron mobility is above 106 cm2/V s, even when their Fermi wavelength exceeds 1000 A(ring), making these devices ideally suited for nanofabrication. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114391
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  • 10
    Digitale Medien
    Digitale Medien
    High index contrast mirrors for optical microcavities (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1387-1389 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new technique for constructing multilayer dielectric mirrors is described that results in high reflectivities with only two or three dielectric layer pairs per mirror. These structures are obtained by selectively etching layered AlxGa1−xAs material grown by molecular beam epitaxy and then replacing the etched regions with acrylic resin or air. A thin optical cavity produced by this technique is demonstrated with mirror reflectivities near 96%. These techniques allow the fabrication of lasers, light-emitting diodes, or optical switches with high contrast ratio mirrors on both sides of an optically active region in order to enhance output coupling, lower laser thresholds, and increase modulation rates.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103443
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