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  • 1
    Digitale Medien
    Digitale Medien
    The negative differential resistance behavior in delta-doped GaAs structure due to resonant interband tunneling (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 780-782 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A GaAs delta-doped tunneling diode having a δn+-i-δp+-i-δn+ structure is investigated. A negative differential resistance behavior with peak-to-valley ratio as high as 3.1 and a peak current density of 3 kA/cm2 is exhibited when the device is operated at room temperature. It becomes resistor-like at the temperature of 77 K. Theoretical analysis, based on envelope wave function approximation, indicates that the resonant interband tunneling process is responsible for room-temperature characteristics, while the band-gap widening effect is responsible for low-temperature behavior. Furthermore, the dependence of device performance on such structure parameters as doping level, and the physical dimension of the delta-doped region, etc., is discussed, and found to agree well with experimental results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351343
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  • 2
    Digitale Medien
    Digitale Medien
    Chemical sputtering of Al2O3 by fluorine-containing plasmas excited by electron cyclotron resonance (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5329-5336 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Reactive ion etching of aluminum oxide has been studied in CHF3 and SF6 plasmas generated by electron cyclotron resonance in conjunction with in situ ellipsometric measurement for thickness variation. Because of the involatility of etch products associated with aluminum, purely chemical reactions cannot desorb etch products at room temperatures, and ion bombardment is essential to etch Al2O3 through chemically enhanced physical sputtering. The higher the oxygen content in a film, the faster the etch rate, resulting from chemical sputtering due to volatile CO molecules in CHF3 plasmas. This dependence on composition is absent in SF6 plasma. The threshold ion energy for physi-chemical sputtering by fluorine-containing species is estimated to be about 20 eV at room temperature, while the threshold for Ar sputtering is 50 eV. In CHF3 plasmas, however, Al2O3 exhibits a larger threshold energy at a lower temperature due to passivating species which inhibit sputtering. These passivating species have a very weak binding energy of roughly 0.1 eV, which has been deduced from a temperature dependence of the threshold energy. A patterned sample always shows vertical profile without undercuts.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347027
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  • 3
    Digitale Medien
    Digitale Medien
    Magnetic aftereffect in nanocrystalline Fe88Zr7B4Cu1 alloy : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6594-6596 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The magnetic relaxation phenomenon was investigated by using the pulse method for an Fe88Zr7B4Cu1 alloy with nanoscale grain structure, which was prepared by melt quenching and a subsequent annealing. In order to know the relationship between the microstructure and the magnitude of magnetic aftereffect in the nanocrystalline state, annealing temperature dependence of volume fractions of crystalline bcc-Fe and residual amorphous phase was also measured. It was found that disaccommodation occurred in this nanocrystalline alloy, and the intensity of disaccommodation decreased as the fraction of the crystalline bcc-Fe phase increased. Moreover, the jumping field, defined by the magnetic field, at which initial magnetization curve rises abruptly decreased as the fraction of residual amorphous phase was reduced. From the observed results, the magnetic aftereffect was considered to result from the residual amorphous phase.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352575
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  • 4
    Digitale Medien
    Digitale Medien
    Computer simulation of Si-implanted GaAs (001) single crystals (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 229-233 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A computer simulation based on the binary collision approximation has been performed to investigate the Si implantation efficiency, the Si depth profile, and the vacancy formation for Si-implanted GaAs (001) crystals. The results reveal a strong dependence on the incident angle of the Si source. The calculated depth profile of Si agrees well with the experimental results from secondary-ion mass spectroscopy. The simulated distribution of vacancies is shallower than that of Si atoms. Also, the calculated number of Ga vacancies exceeds that of As vacancies, which suggests that the Si atoms easily occupy the Ga sites and are activated as donors.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352164
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  • 5
    Digitale Medien
    Digitale Medien
    Thermally stimulated current of Si-ion-implanted GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5419-5422 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A thermally stimulated current technique has been carried out to investigate the defect levels in Si-ion-implanted GaAs. Thermally stimulated current measurements have been performed in the temperature range of 90–300 K, and five deep traps with activation energies of 0.18, 0.20, 0.31, 0.40, and 0.43 eV have been observed. It is considered that the one of the traps (Ea=0.18 eV) shows the optical quenching effect and another trap (Ea=0.20 eV) is related to the damage due to the implanted ions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351377
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  • 6
    Digitale Medien
    Digitale Medien
    Experimental method for preparing nanometer scale Pd probe (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3022-3023 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Two-step electrochemical etching is used to fabricate a palladium microprobe having a tip diameter less than 20 nm. The first etching is done at 4–7 V in a solution containing 4:6 volume ratio of HCl:HNO3, while in the second the etching, low voltage pulses are used.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1144352
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  • 7
    Digitale Medien
    Digitale Medien
    Luminescence and electron paramagnetic resonance studies of white-light emitting SrS: Pr, F thin film electroluminescent devices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1754-1757 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The fluorescence emission and excitation spectra of white-light emitting SrS: Pr, F thin film electroluminescent devices have been investigated. It was determined from the results obtained that the dominant electroluminescence mechanism was that the ionization of Pr3+ centers occurs first, then subsequently recombination with electrons occurs, and finally Pr3+ center transitions give rise to luminescence. The emission mechanism of SrS: Pr, F seems to be the same as that of a SrS: Pr, K electroluminescent device, except for the appearance of strong peaks around 610–670 nm. The impurity excitation peak in the lower excitation energy, longer-wavelength region in the FL spectrum may be an important factor for the selection of an effective white-light emitting EL material. The electron paramagnetic resonance experiment of SrS: Pr, F was performed on powder and thin film specimens. The hyperfine structure of an isolated Mn2+ ion was observed in this SrS: Pr, F thin film. This Mn center which was substituted for Sr, seems to contribute to the strong red emission in the white EL spectrum.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356366
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  • 8
    Digitale Medien
    Digitale Medien
    Studies of anisotropic and giant magnetoresistance in Co/Cu(111) epitaxial multilayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6276-6278 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Co/Cu(111) multilayers, [Co(17 A(ring))/Cu(8 A(ring)〈tCu〈14 A(ring))]30, have been prepared on Co(70 A(ring)) buffer layers on Al2O3(0001) substrates by molecular beam epitaxy. From the longitudinal and transverse magnetoresistance (MR) measurements, it is observed that MRs consist of two components with a small anisotropic MR (〈2%) component at low field sitting on top of the giant MR (up to 22%) component at higher field. The AMR effect strongly correlates with the abundance of hcp stacking of Co, which tends to decrease with the increasing of Cu spacer thickness. The AMR saturation fields (1–3 kOe) coincides with those of the magnetization. It is suggested that the observed AMR effect is due to scattering from the hcp-phase Co layers in the multilayers. This together with the large saturation field (30–40 kOe) obtained from the entire MR curves indicate that the observed GMR effect may result from the Co-Cu interfacial spin-dependent scattering. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362035
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  • 9
    Digitale Medien
    Digitale Medien
    Light-emission phenomena from porous silicon: Siloxene compounds and quantum size effect (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8060-8065 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It has long been argued whether the luminescent mechanism of anodized porous silicon is mainly due to the chemical compounds such as siloxene derivatives, or the quantum size effect. We performed a comprehensive study using atomic force microscope, infrared transmission, Raman scattering, and photoluminescence measurements in terms of various annealing temperatures. Low - temperature photoluminescence spectra have also been observed. This leads us to conclude that not only the siloxene derivatives but also the quantum size effect gives the luminescence in porous silicon. The previous pseudopotential calculations are used for the explanation of our experimental results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356547
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  • 10
    Digitale Medien
    Digitale Medien
    Effect of an interlayer on the emission characteristics of a white-light-emitting electroluminescent device with a Pr and Ce doubly doped ZnS phosphor layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8717-8724 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have investigated light-emission characteristics of a white-light-emitting electroluminescent device with a doubly doped ZnS:Pr,Ce,F phosphor layer. We found that optimum codoping of Ce enhances the emission characteristics compared to the electroluminescent device with a singly doped ZnS:Pr,F layer. We also found that introducing an additional thin-insulating SixNy interlayer between the lower insulating layer and the phosphor layer significantly stabilizes the aging characteristics and improves the luminous efficiency. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362498
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