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  • 11
    Electronic Resource
    Electronic Resource
    Low-threshold continuous-wave room-temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2 back coating (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1179-1181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the first room-temperature low-threshold continuous-wave (cw) operation of Al0.3Ga0.7As/GaAs single quantum well (SQW) heterostructure lasers grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates using techniques of SiO2 back coating and thermal cycle annealing. The all-MOCVD-grown SQW lasers on GaAs/Si with etch pit density of 1.5× 107 cm−2 have threshold current as low as 55 mA (1.41 kA/cm2) under cw at room temperature. The SiO2 back coating is effective to obtain excellent current-voltage characteristics. Thermal cycle annealing is also found to improve the crystallinity of GaAs/Si and to contribute to room-temperature cw operation of the lasers on Si substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103519
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  • 12
    Electronic Resource
    Electronic Resource
    Harmonic cross phase modulation in ZnSe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 111-113 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal profiles of harmonic cross phase modulation pulses from 500 to 570 nm generated in ZnSe by a 1054 nm picosecond pulse have been observed and theoretically modeled. The pulse shape of these harmonic-modulated pulses is accounted for by the interference and induced phase matching of the harmonic generated waves in ZnSe by cross phase modulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101244
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  • 13
    Electronic Resource
    Electronic Resource
    Quality improvement of metalorganic chemical vapor deposition grown GaP on Si by AsH3 preflow (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 862-864 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaP epilayers are grown on Si substrates after AsH3 preflow. Electron beam induced current observation and double-crystal x-ray diffraction show that the AsH3 preflow drastically improves crystalline quality of GaP epilayers. The full width at half-maximum of the (400) reflection obtained from 4.8 μm GaP is as small as 115 arcseconds. Secondary ion mass spectroscopy shows that As atoms accumulate at the GaP/Si interfaces, playing an important role in preventing Si outdiffusion into the GaP epilayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100096
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  • 14
    Electronic Resource
    Electronic Resource
    InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 528-530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 °C. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1408264
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  • 15
    Electronic Resource
    Electronic Resource
    Optical and electrical degradations of GaAs-based laser diodes grown on Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1401-1403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs-based laser diode grown on a Si-substrate suffers from degradation, which results from the deterioration of electrical and optical characteristics. An initial deterioration of a p-n junction is observed in a reverse current-voltage (I-V) characteristic, and becomes ohmic-like under a higher ambient temperature and a larger forward current. Electroluminescence observation shows that the optical deterioration is caused by the growth of dark spot regions, which act as nonradiative recombination regions. The deterioration of the I-V characteristic is probably due to defect-accelerated impurity diffusion because the growth of GaAs/Si involves a high dislocation density, a large tensile stress and a large amount of Si near the GaAs/Si interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111896
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  • 16
    Electronic Resource
    Electronic Resource
    Surface microroughness observed by scanning tunneling microscope and improved device characteristics of GaAs/Si grown with AlGaAs/AlGaP intermediate layers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2923-2925 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscope images show that a smoother surface and heterointerface can be obtained in a GaAs/Si grown with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs), which result from a two-dimensional growth at an initial stage. By using the AlGaAs/AlGaP ILs, the device characteristics are improved; a saturation electron velocity of 1.6×107 cm/s for a GaAs metal-semiconductor field-effect transistor, and an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23 cm−1, a differential gain coefficient of 1.9 cm/A, and a transparency current of 266 A/cm2 for a single quantum-well laser diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108023
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  • 17
    Electronic Resource
    Electronic Resource
    2000 h stable operation in 0.87 μm light-emitting diode using stress-free InGaP/GaAs/Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3605-3607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown Al-free reliable 877 nm In0.49Ga0.51P/GaAs light-emitting diodes (LEDs) on Si substrates by metalorganic chemical vapor deposition. The conventional Al-containing Al0.3Ga0.7As/GaAs LEDs on Si substrates exhibit rapid degradations because of the formation of dark-line defects (DLDs). On the contrary, the In0.49Ga0.51P layer on the GaAs/Si substrate exhibited a 300 K electron mobility of 950 cm2/V s with the carrier concentration of 3.8×1017 cm−3, no residual stress and a lower surface recombination velocity. The In0.49Ga0.51P/GaAs LED on Si shows the stable operation for more than 2000 h, which results from the suppression of the formation of DLDs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115332
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  • 18
    Electronic Resource
    Electronic Resource
    Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2995-2997 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the rapid degradation of the AlGaAs/GaAs single quantum well laser diodes on Si substrates grown by metalorganic chemical vapor deposition. The dislocations propagate at velocities up to ∼75 μm/h along 〈100〉 and ∼20 μm/h along 〈110〉, which cause an increase in threshold current and a decrease in differential quantum efficiency. The degraded current–voltage characteristic resulted from the defect-assisted impurity diffusion. The degradation process occurs very rapidly due to the presence of a high density of defects and thermally induced strain. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114930
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  • 19
    Electronic Resource
    Electronic Resource
    Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 830-832 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metalorgonic chemical vapor deposition. Electroluminescence, electron-beam induced current, and cathodoluminescence observations have shown that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm2 were determined to be 1.1×10−3, 1.9×10−3, and 3.9×10−3h−1 at ambient temperatures of 30, 50, and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117906
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  • 20
    Electronic Resource
    Electronic Resource
    Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 809-811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of electron beam (EB) evaporated silicon dioxide (SiO2)/n-GaN, plasma enhanced chemical vapor deposited (PECVD) SiO2/n-GaN, and PECVD silicon nitride (Si3N4)/n-GaN interfaces were investigated using high frequency capacitance–voltage measurements. Compositions of the deposited insulating layers (SiO2 and Si3N4) were analyzed using x-ray photoelectron spectroscopy. Metal-insulator-semiconductor structures were fabricated on the metalorganic chemical vapor deposition grown n-type GaN layers using EB, PECVD grown SiO2 and PECVD grown Si3N4 layers. Minimum interface state density (2.5×1011 eV−1 cm−2) has been observed in the PECVD grown SiO2/n-GaN interface when it was compared with EB evaporated SiO2/n-GaN interface (5.3×1011 eV−1 cm−2) and PECVD Si3N4/n-GaN interface (6.5×1011 eV−1 cm−2). The interface state density (Nf) depends on the composition of deposited insulating layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122009
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