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  • 11
    Electronic Resource
    Electronic Resource
    Very high purity InP epilayer grown by metalorganic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 117-119 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very high purity InP epilayers have been grown by low-pressure metalorganic chemical vapor deposition growth technique using trimethylindium as In source. Residual doping levels as low as 3×1013 cm−3 , with Hall mobility as high as 6000 cm2 V−1 s−1 at 300 K and 200 000 cm2 V−1 s−1 at 50 K have been measured. These results and photoluminescence at 2 K showed that it is the purest InP epilayer ever reported in the literature, with zero compensation ratio.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99068
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  • 12
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of GaAs on Si: The effect of in situ thermal annealing under AsH3 (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1976-1978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter shows that an in situ thermal annealing step in AsH3/H2 during the metalorganic vapor phase epitaxy of GaAs on Si(001) improves the crystalline quality. The dislocation density is reduced (below 107 cm−2) without affecting the Si diffusion across the heterointerface or the strain level in the epilayer. The nature of the various near-band-gap recombinations present in the unannealed and annealed samples is discussed in light of selective photoluminescence experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99595
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  • 13
    Electronic Resource
    Electronic Resource
    Smooth, pseudosmooth, and rough GaAs/AlxGa1−xAs interfaces: Effect of substrate misorientation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2605-2607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlxGa1−xAs quantum well and superlattice structures have been grown at 600 °C by molecular beam epitaxy on GaAs (001) substrates exactly oriented or slightly misoriented towards (111) Ga and (111) As. It is shown that for the growth conditions used, the step orientation (nature) has a striking influence on the photoluminescence (PL) features of the grown structures: steps along [1¯10] (Ga-type steps) lead to sharp PL lines (pseudosmooth interfaces), while a considerable broadening of the PL (rough interfaces) is obtained when the steps are along [110] (As-type steps).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101967
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  • 14
    Electronic Resource
    Electronic Resource
    Evidence of isovalent impurities in GaAs grown by molecular-beam epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2996-2998 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-pressure, low-temperature photoluminescence spectra of Si-doped GaAs grown by molecular-beam epitaxy show well-defined features corresponding to nitrogen-bound exciton recombination, together with other isoelectronic center-bound excitonlike lines. Though N, when isolated, only influence weakly the GaAs electronic properties, we briefly discuss the consequences of its association with other impurities. It is suggested that complexes involving isovalent impurities may be responsible for part of the defect bound exciton luminescence, observed by several authors in molecular-beam-epitaxy–grown GaAs. The source of isovalent impurities is tentatively attributed to the high-temperature boron nitride crucibles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336919
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  • 15
    Electronic Resource
    Electronic Resource
    Optical spectroscopy at cryogenic temperatures using a Block–Piermarini diamond-anvil cell (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 772-775 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple experimental setup allowing low-temperature high-pressure spectroscopy, with in situ pressure adjustment, is described. A Block–Piermarini diamond-anvil cell is used together with standard laboratory materials. Results of semiconductor photoluminescence studies, using argon as a pressure-transmitting medium, are given as an illustration and are also used for the study of the pressure conditions. Pressure homogeneity is better than 100 MPa up to 6 GPa, and the residual uniaxial component of the stress can be lower than 100 MPa.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139826
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  • 16
    Electronic Resource
    Electronic Resource
    Stress-free GaAs grown on Si using a stress balance approach (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3568-3570 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique, based on a stress balance principle, is proposed to control residual stress magnitude in GaAs layers grown on Si substrates. It is demonstrated that, using a suitable GaAs1−xPx buffer layer, room (300 K) or low (2 K) temperature stress-free GaAs can be grown on Si (100).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105634
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  • 17
    Electronic Resource
    Electronic Resource
    Donor–acceptor-pair spectroscopy of GaAs grown in space ultravacuum (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3341-3343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective pair luminescence has been used to identify shallow acceptor levels in undoped GaAs epilayers grown by molecular beam epitaxy (MBE) in the ultrahigh vacuum of space generated in the wake of the free-flying Wake Shield Facility satellite (Space Shuttle Endeavor mission STS69). The low-temperature photoluminescence spectra are typical of high-purity GaAs. Unlike for conventional MBE-grown undoped GaAs where the near-band-edge excitonic luminescence is dominated by acceptor-bound excitons, the space-grown GaAs near-band-edge luminescence was found to be dominated by donor-bound excitons. The comparison of measured ground (1S3/2) and excited acceptor states to published acceptor spectra leads to the identification of CAs as the main residual acceptor impurity in the layer. Furthermore, the existence of a donor–acceptor-pair emission band demonstrates that a second acceptor is electronically active. Excited-state spectroscopy clearly identifies the second residual acceptor as ZnGa, which is scarcely observed for GaAs samples grown in terrestrial MBE systems. In addition, the absence of a Be impurity, introduced in large quantities to the growth environment prior to the epilayer growth, suggests a minimized memory effect on the free flyer as opposed to terrestrial chambers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123338
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  • 18
    Electronic Resource
    Electronic Resource
    Photoluminescence study of ZnSe single crystals grown by solid-phase recrystallization (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1356-1358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate through low-temperature photoluminescence (PL) and selective photoluminescence (SPL) spectroscopies, ZnSe single crystals grown by solid-phase recrystallization. The PL spectra are dominated by the so-called I1deep excitonic line, a neutral–acceptor bound–exciton line I1, the free-exciton emission FX, and the n=2 excited state of FX. We identify the main residual impurities. Donor–acceptor pair bands are hardly detected. A major characteristic of these samples is the quasiabsence of any Cu-related deep emission which generally plagues the PL spectra of bulk ZnSe. Consequently, I1deep is ascribed to an exciton bound to Zn-vacancies related acceptors. Our results indicate that these ZnSe samples are of high quality and that solid-phase recrystallization is a promising technique to prepare ZnSe epitaxial substrates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116078
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  • 19
    Electronic Resource
    Electronic Resource
    Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1348-1350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow donors in GaN epilayers grown by metalorganic chemical vapor deposition on sapphire and GaN substrates have been studied by selectively excited photoluminescence (SPL) and by far-infrared (FIR) spectroscopy. A comparison of FIR and SPL results reveals a small splitting between the 2s and 2p donor states, interpreted as partly being due to the nonspherical crystal symmetry. The utilization of the selective excitation of neutral donor bound excitons I2 allows the identification of the I2 rotational excited states. An interpretation of two-electron spectra in GaN involving excited states of I2 is proposed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290386
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  • 20
    Electronic Resource
    Electronic Resource
    Revision of Al I Terms (1938)
    [s.l.] : Nature Publishing Group
    Nature 141 (1938), S. 1017-1017 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] IN the course of a study of the proper co-ordination of the AlH spectral terms to the Al + H atomic combinations1, some doubts arose as to the correctness of Lansing's analysis2 of the Al I lines in the region 3050–3070 A. Spectrograms of an interrupted ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/1411017b0
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