ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ irondoping. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD usingorgano-silicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and metal organicprecursor, t-butylferrocene ([C14H17Fe]). Doping-induced crystallinity degradation showed differenttendency depending on conducting type of substrate. The crystal quality of epilayer grown on n-typesubstrate was not degraded significantly despite of the Fe doping but in case of semi-insulatingsubstrate, crystallinity was remarkably degraded as increasing iron contents. For measurement ofresistivity of highly resistive iron-doped 4H-SiC epilayer, we used the on-resistance technique whichis firstly attempted for measuring resistivity of epilayer. From on-resistance of epilayer measured byI-V, it is shown that the residual donor concentration of epilayer was decreased as increasing partialpressure of t-butylferrocene. The resistivity of iron-doped 4H-SiC epilayer was about 107 Ωcm. Fromthis result, it is concluded that Fe could effectively act as a compensation center in the iron-doped4H-SiC
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.215.pdf
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