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  • 11
    Electronic Resource
    Electronic Resource
    Epitaxial growth of ferroelectric bismuth titanate thin films by pulsed laser deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1505-1507 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of ferroelectric bismuth titanate Bi4Ti3O12 have been grown by pulsed laser deposition on single-crystal [100] SrTiO3 substrates. Bismuth titanate has a high Curie temperature (675 °C) and saturation polarization values of 4 and 50 μC/cm2 along the c and b axis, respectively. Its a,b lattice parameters allow thin-film growth on substrates such as SrTiO3, LaAlO3, MgO, etc. These single crystalline films exhibit good quality as evidenced by x-ray diffraction, Rutherford backscattering, and transmission electron microscopy. Applications for these films include memory devices and optical displays.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104128
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  • 12
    Electronic Resource
    Electronic Resource
    Correlation of superconductivity with "oxygen dimer'' peak in photoelectron spectra from YBa2Cu3−xCoxO7−y (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2099-2101 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy of YBa2Cu3−xCoxO7−y (0〈x〈0.4) shows a systematic change in the O 1s and Cu 2p3/2 regions as a function of x. Three peaks in the O 1s spectra at 528.5, 531, and 532.7 eV are seen for x=0 which are assigned to O2−, O1−, and O2−2 ions, respectively. As x is increased, the relative intensity of the O2−2 or O1− to the O2− peak decreases and the Cu2+ fraction increases showing a correlation with the decrease in the superconducting transition temperature. The result is interpreted in terms of Co ions substituting for the Cu ions in the chain with the Co ion in octahedral coordination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100500
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  • 13
    Electronic Resource
    Electronic Resource
    Substrate effects on the properties of Y-Ba-Cu-O superconducting films prepared by laser deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4591-4598 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of Y1Ba2Cu3Ox with superconducting transition temperature (Tc) near 90 K have been prepared by a laser deposition technique. We show that films prepared on sapphire, lithium niobate, and strontium titanate under identical processing conditions exhibit different electrical characteristics. The film surfaces, interfaces, and crystallinity have been studied by a number of analytical techniques. We conclude that the substrate influences the film properties primarily in three ways: the thermal expansion mismatch introduces cracks in the film, the interface reaction changes the film composition, and the substrate lattice influences the crystallographic orientation of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340136
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  • 14
    Electronic Resource
    Electronic Resource
    Superconducting AgMo6S8 thin films prepared by reactive sputtering (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4829-4834 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preferentially oriented thin films of the Chevrel-phase superconductor AgMo6S8 were prepared by reactive sputtering. Ag and Mo were simultaneously sputtered from separate guns onto sapphire substrates held at about 850 °C with H2S gas injected near the substrate. The films have superconducting critical temperatures up to 9.2 K and narrow-phase transitions. The reactive sputtering process chosen for the preparation of our films makes it possible to change the superconducting properties and the microstructure of the samples in a systematic way by changing individual preparation parameters and to study which of the preparation conditions are the most crucial for the formation of the Chevrel phase. We find that the superconducting transition temperature of the Chevrel phase is very sensitive to both substrate temperature and to the flow of H2S but insensitive to the background pressure in the chamber before deposition. The microstructure can be changed by controlling the H2S pressure. X-ray measurements show that the films are preferentially oriented with the rhombohedral 001 planes parallel to the surface of the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338347
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  • 15
    Electronic Resource
    Electronic Resource
    Thick films of Bi-Sr-Ca-Cu-O and Tl-Ba-Ca-Cu-O by solution processes (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6382-6387 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared superconducting thick films of the Bi-based and the Tl-based cuprates via the decomposition of aqueous-glycerol solutions containing the salts of the elements. Preliminary results are presented in this work. The substrates are coated prior to heat treating, either by dipping or by spraying on various substrates heated at 200 °C. Short firing times are required in order to minimize the loss of the constituent Bi (Tl). We find that nitrates of the constituents dissolved in a water-glycerol solution increase the reaction rate in comparison to pure nitrate aqueous solutions. They also help to produce the correct superconducting phase before some reaction with the substrate occurs or too much of the constituent Bi (Tl) is lost during heating to form the superconducting phase. However, the thallium phases cannot be obtained if the films are not fired in the presence of a high pressure of thallium in a sealed capsule. The films are composed of platelets, a few microns large, that are on average oriented parallel to the substrate with their c axis normal. The Bi films show an onset temperature at 85 K and zero resistance at 75 K while the Tl films show an onset temperature of 105 K and zero resistance at 95 K. The critical currents obtained to date are quite low (∼50 A/cm2 at 77 K for the thallium phase).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342075
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  • 16
    Electronic Resource
    Electronic Resource
    Bulk and thick films of the superconducting phase YBa2Cu3O7−y made by controlled precipitation and sol-gel processes (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2725-2729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The synthesis of high-temperature superconducting oxides using solution chemistry has been investigated and physical properties are compared to ceramics obtained by conventional solid-state reactions. We report on controlled precipitation and sol-gel processes, both of which produce materials with particle sizes smaller than 5 μm. We find that the superconducting properties of the high Tc ceramics are affected by their manner of preparation, such that the transitions are slightly lower in temperature, but sharper, for samples made by solution rather than solid-state chemistry. The ability to prepare stable viscous gels provides an opportunity for obtaining large areas of superconducting coatings. For thick films on alumina or silicon substrates, contamination from the substrate is shown to be a problem. Finally, we observe that the sol-gel process lowers the synthesis temperature by 100 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340967
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  • 17
    Electronic Resource
    Electronic Resource
    Ferroelectric PbZr0.2Ti0.8O3 thin films on epitaxial Y-Ba-Cu-O (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3542-3544 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated epitaxial ferroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7−x heterostructures on single crystalline [001] LaAlO3. Only the (00l) peaks of the PbZr0.2Ti0.8O3 (PZT) film are observed, indicating that the epitaxial, c-axis oriented YBCO film is a good structural template for the heteroepitaxial growth of PZT films, in addition to being a metallic bottom electrode. A saturation polarization and remanence as high as 38 and 26.5 μC/cm2 (at 7.5 V, 0.5 kHz), respectively, have been achieved. The coercive field is about 100 kV/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105651
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  • 18
    Electronic Resource
    Electronic Resource
    Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1537-1539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fatigue and retention characteristics of ferroelectric lead zirconate titanate thin films grown with Y-Ba-Cu-O(YBCO) thin-film top and bottom electrodes are found to be far superior to those obtained with conventional Pt top electrodes. The heterostructures reported here have been grown in situ by pulsed laser deposition on yttria-stabilized ZrO2 buffer [100] Si and on [001] LaAlO3. Both the a- and c-axis orientations of the YBCO lattice have been used as electrodes. They were prepared using suitable changes in growth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107488
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  • 19
    Electronic Resource
    Electronic Resource
    Ferroelectric bismuth titanate/superconductor (Y-Ba-Cu-O) thin-film heterostructures on silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1782-1784 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth by pulsed-laser deposition of c-axis-oriented bismuth titanate (BTO)/YBa2Cu3O7(YBCO) superconductor heterostructures on [001]-oriented Si with epitaxial yttria-stabilized ZrO2 as a buffer layer is reported. X-ray-diffraction studies of the heterostructures show that all the layers grow in the c-axis orientation, with a rocking angle of 1.0°–1.2° for the bismuth titanate layer and 0.6°–0.8° for the YBCO layer. Rutherford backscattering ion channeling yields of 28% at the surface have been obtained. Transmission electron microscopy of cross-sectioned samples reveal that the BTO layer has a significant density of translational boundaries that propagate at 45° to the film surface. The BTO film exhibits ferroelectric hysteresis and a dielectric constant in the range of 180–200.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106199
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  • 20
    Electronic Resource
    Electronic Resource
    Fabrication of thin-film LiMn2O4 cathodes for rechargeable microbatteries (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1260-1262 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated thin-film cathodes of lithiated manganese oxide (LixMn2O4, where x≤1), which can reversibly intercalate nearly one Li atom per unit formula, at a steady potential of 4.1 V. This results in a theoretical energy density of about 600 Wh/kg. The polycrystalline films (thickness of 0.5–2 μm) show electrochemical performance exceeding that of bulk materials. This is attributed to the small grain size and the porosity within these LixMn2O4 three-dimensional spinel films, reducing the diffusion path length for Li+ ions. The films are tested as the cathodes in about 70 charging/discharging cycles, in a secondary lithium cell, at current rates of 10–100 μA cm−2. No measurable self-discharge over 12 h periods is observed. These thin-film cathodes with above electrochemical properties are very promising for a new generation thin-film secondary batteries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105470
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