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  • 11
    Electronic Resource
    Electronic Resource
    Surface modification of YBa2Cu3Oy thin films with a scanning tunneling microscope (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2535-2537 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a systematic modification of thin YBa2Cu3Oy films with a scanning tunneling microscope. The samples include YBa2Cu3Oy films on MgO(001) and YBa2Cu3Oy/PrBa2Cu3Oy bilayer films on SrTiO3 (001). The bias voltage of the tip was kept negative and varied from −600 to −1200 mV. The tip was operated in a constant tunneling current mode with tunneling current 0.3–0.7 nA and scanning rate 1 Hz. Modification of the surface begins with nucleation of holes, or at the edge of a dislocation or protrusion on the surface, and is achieved by successively scanning a fixed area. We show the image obtained from an atomic force microscope which can help us look into the mechanism of the modification.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357566
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  • 12
    Electronic Resource
    Electronic Resource
    II–VI quantum confined Stark effect waveguide modulators (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 946-948 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum confined Stark effect p-i-n waveguide modulators, grown on GaAs substrates by molecular beam epitaxy and using an undoped ZnSe/ZnCdSe multiquantum well structure as the guiding layer, have exhibited intensity modulation at wavelengths of 496 and 501 nm with extinction ratios of 6 and 4, respectively. These same devices have also demonstrated a transverse linear electro-optic effect observed as a superimposed secondary effect on the lateral intensity modulation at 514 nm in the form of phase modulation in the output of the same device. Intensity modulation has also been observed in quaternary laser waveguide structures, indicating that this is a device structure which is suitable for monolithic integration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116107
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  • 13
    Electronic Resource
    Electronic Resource
    Ground state properties of a high-spin Mn12O12 molecule in an organic compound : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7100-7102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure and the magnetism of a Mn12O12 molecule at ground state have been studied by density functional theory with a local spin density approximation. We have found that the magnetic moments of Mn ions in the tetrahedron and those of Mn ions in the crown of the Mn12O12 molecule align antiferromagnetically. The average moment per Mn ion is about 3.07μB in the tetrahedron and 4.07μB in the crown. The total spin amounts to 20.0μB which is in agreement with recent experimental results. The significant difference of magnetic moments between Mn ions at two sites is attributed to the different exchange splitting of 3d orbitals. However, the charge difference between the two kinds of Mn ions is as small as 0.22 electrons. The charge density and the spin density exhibit strong directional dependence, which indicates the strong anisotropy in this molecule. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367750
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  • 14
    Electronic Resource
    Electronic Resource
    Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2680-2683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 8–12 μm InGaAs/GaAs quantum well infrared photodetectors with two different well doping concentrations have been studied. The devices with and without surface gratings are compared for normal incident operation. It is found that the TE to TM absorption ratio depends on the doping density in the quantum wells. A higher doping density increases TE absorption. A detectivity about 1×1010 cm Hz1/2/W and a peak responsivity of 0.23 A/W at 9 μm have been obtained for the grating-free devices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366084
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  • 15
    Electronic Resource
    Electronic Resource
    GaAs traveling-wave polarization electro-optic waveguide modulator with bandwidth in excess of 20 GHz at 1.3 μm (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 83-85 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a 1.3-μm GaAs traveling-wave electro-optic waveguide modulator with a 3-dB optical bandwidth in excess of 20 GHz. The bandwidth was determined by directly detecting the modulated optical signal with a high-speed InP/GaInAs photodiode. The modulator has a coplanar strip electrode configuration with a double heterojunction Al0.032Ga0.968As/GaAs/Al0.032Ga0.968As optical guide grown by low-pressure organometallic vapor phase epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98982
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  • 16
    Electronic Resource
    Electronic Resource
    Optical and structural properties of epitaxially lifted-off GaAs films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 466-468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the layer thickness on the optical and structural properties of the epitaxially lifted-off (ELO) thin films has been studied. The ELO films bonded to Si, InP, and GaAs substrates have also been compared. The structure was characterized by high-resolution double-crystal x-ray diffraction and the optical properties were measured by the temperature-dependent photoluminescence spectroscopy. A biaxial compressive strain was observed for the samples bonded to Si with a buffer layer thinner than 1000 nm. Due to different thermal expansion coefficient between the grafted thin film and the host substrate, the emission spectra of the quantum wells of the lifted-off thin films are redshifted compared to the as-grown sample. The amount of the redshift is larger for thinner films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366662
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  • 17
    Electronic Resource
    Electronic Resource
    Measurements on standing waves in GaAs coplanar waveguide at frequencies up to 20.1 GHz by electro-optic probing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 419-421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the experimental results of the standing waves in GaAs coplanar waveguides at frequencies up to 20.10 GHz with different terminations (open, short, and 50 Ω) by a new electro-optic probing technique. The effective refractive indices from 4.11 to 20.10 GHz are presented and compared with theoretical values. Dispersion of coplanar waveguide in that frequency range is shown to be negligible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341444
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  • 18
    Electronic Resource
    Electronic Resource
    ZnSe-ZnCdSe quantum confined Stark effect modulators (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1715-1717 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report room temperature operation of a II-VI p-i-n quantum confined Stark effect modulator using a ZnSe-Zn0.8Cd0.2Se multiple quantum well structure within a ZdSe p-n junction. A n-type ZnSe layer was used as a novel contact to the p-type ZnSe. Results are given for photovoltage spectroscopy, absorption, and differential absorption as a function of the applied electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109583
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  • 19
    Electronic Resource
    Electronic Resource
    Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2474-2476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report low densities of electrically active defects and low optical losses at the wafer fused interface between InP and GaAs. Electron beam induced current analysis shows electrically active defects with an average spacing of 4.5 μm at the interface and significantly lower densities 0.4 μm from the fused interface. Optical measurements of a Fabry–Perot resonator made by fusing an InP epilayer to a GaAs/AlAs mirror demonstrate a 3% increase in mirror transmission after fusing and negligible absorption at the fused interface. Based on these results, we present design considerations for fused surface emitting lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109323
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  • 20
    Electronic Resource
    Electronic Resource
    Compensation processes in nitrogen doped ZnSe (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2208-2210 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor–acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (VSe-Zn-NSe) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108296
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