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  • 21
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7395-7397 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of magneto-optical property in the visible wavelength region has been studied on four-element semimagnetic semiconductor CdMnCoTe films deposited on quartz glass substrates by using MBE equipment. A large dispersion of Faraday rotation was observed, and the peak of the Faraday rotation was shifted to the higher photon energies with increasing Mn concentration at low temperatures. At 180 K, the value of the Faraday rotation observed for the Cd0.647Mn0.34Co0.013Te film on quartz glass was −0.36 deg/cmG at 630 nm. It is equivalent to the value of −0.36 deg/cmG observed at 77 K for the Cd0.52Mn0.48Te film on quartz glass. At 77 K, the Faraday rotation observed for the Cd0.647Mn0.34Co0.013Te film on quartz glass was −0.49 deg/cmG at 610 nm. The value is approximately two times larger than that of the Cd0.52Mn0.48Te film deposited on the same quartz glass substrate. The origin of the enhancement of Faraday rotation in CdMnCoTe films has been discussed in terms of the magnetic susceptibility χ. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 22
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5914-5914 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, high-Tc oxide superconductors have been extensively studied because these materials can be applied to various electronic devices, especially highly sensitive magnetic sensors or high-speed switching elements. For such the applications, thin films with superior superconductivity and very smooth surfaces are needed. The purpose of this work is to develop an as-grown technique of Y-Ba-Sr-Cu-O films on comparatively low-temperature substrates by adopting a newly devised alternative sputtering. The sputtering apparatus was constructed by three targets and a substrate holder which was intermittently rotated and stopped facing the desired target. The targets were Y2O, BaO+SrO, and Cu or CuO. The thickness of the oxide layer alternately deposited was adjusted to the thickness of the each metal-oxide monolayer. The substrate used was a (100) plane of a single-crystal MgO. The substrate temperature Ts was changed from 450 to 600 °C. The deposition rate of the each layer was affected by Ts. Especially, the deposition of the CuO layer was very sensitive to conditions of the film growing surface: Ts and/or degree of oxidation. The film composition was adjusted by changing the deposition time of the each layer. The crystal with an oxygen-defective perovskite nucleated even at a Ts of about 500 °C. In the case of sintered bulks, a tetragonal phase was obtained when the content of Sr was comparatively large. In contrast, an orthorhombic phase was stabilized in the sputtered films. As-grown films showed a poor superconductivity. After a post-annealing in 1-atom O2 at a low temperature of about 450 °C, a sharp superconducting transition was observed above 77 K. As we increase the content of Sr, the resistivity of the film became large and semiconductive.
    Type of Medium: Electronic Resource
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  • 23
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4865-4867 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied magnetic and magnetotransport properties of novel III-V diluted magnetic semiconductors, (Ga1−xMnx)As. The GaMnAs thin films were grown on GaAs(001) substrates by low temperature molecular beam epitaxy. We present magnetoresistance, extraordinary Hall effect, and M–H characteristics of two (Ga1−xMnx)As samples having different Mn content x. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 24
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New ultrathin epitaxial magnetic multilayers consisting of ferromagnetic τMnAl and nonmagnetic NiAl have been prepared on GaAs by molecular beam epitaxy. The magnetic and magneto-optic properties of these multilayers and the effect of incorporating nonmagnetic NiAl into the structure have been investigated. Perpendicular magnetization was confirmed and the remnant magnetization and coercivity were improved compared to τMnAl thin films. In addition, by systematically changing the thickness of the NiAl layer the magnetic properties could be controlled. We discuss these issues and compare the magnetic and magneto-optic properties of these structures with other epitaxial magnetic structures.
    Type of Medium: Electronic Resource
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  • 25
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferromagnetic perpendicularly magnetized epitaxial thin films of τ (Mn,Ni)Al have been successfully grown on AlAs/GaAs heterostructures by molecular beam epitaxy. We have investigated the polar Kerr rotation and magnetization of τ MnAl and (Mn,Ni)Al as a function of Mn and Ni concentration. The largest polar Kerr rotation and remnant magnetization were obtained for Mn0.5Al0.5 thin films with values of 0.16° and 224 emu/cm3, respectively. We observed that the Kerr rotation and magnetization remained constant with Ni additions up to about 12 at. % and subsequently decreased with further Ni additions. We discuss these results and one possible method of enhancing the Kerr rotation.
    Type of Medium: Electronic Resource
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  • 26
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5320-5325 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new interferometer has been developed for the accurate determination of the density of a silicon crystal, in which a single-crystal silicon sphere of nearly perfect geometry is placed in a Fabry–Perot etalon of accurately known plate distance, and the diameters are obtained by measuring the two gaps between the etalon and the adjacent surface of the sphere. A new method is used to measure the sum of the length of the two gaps by scanning the etalon against the sphere. Two wavelengths, 633 nm from a frequency-stabilized He–Ne laser and 441 nm from a free-running He–Cd laser, are used to determine the order of interference by applying the method of exact fractions. The diameter of about 94 mm has been measured with a resolution of 0.5 nm. Diameter measurements from uniformly distributed directions have shown that the mean diameter has been determined with a standard deviation of 8.6 nm, corresponding to 0.28 ppm in the volume determination. The total uncertainty of the volume is estimated to be 0.34 ppm. Effects of a thin oxide layer and impurities on the bulk density are discussed.
    Type of Medium: Electronic Resource
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  • 27
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 3582-3587 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The excitation mechanism of standing waves produced by the electron beam plasma instability is experimentally studied using a Double Plasma device. When an electron beam is injected into the target plasma, standing waves around the electron plasma frequency are excited. A test wave is propagated in an electron beam plasma system and is identified as the beam mode from the dispersion relation. The propagation direction of the beam mode is determined from the wave pattern utilizing a phase shifter. It is found that a reflected beam mode exists as well as a forward beam mode, and is generated by the reflection of the forward beam mode from a potential well produced by the injection of the electron beam. The observed standing waves are formed by superposing the beam modes propagating in opposite directions from each other. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 28
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 2486-2494 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experiments on the plasma heat pulse to the detached recombining helium plasma associated with the volumetric radiative and three-body recombination (EIR) have been performed in a linear divertor plasma simulator. Detailed observations of the time evolution of plasma parameters and helium Balmer series spectra show that the dynamic response of the detached recombining plasma to the heat pulse depends strongly on the heat transport through energetic electrons generated by the heat pulse. For the detached recombining plasma with a relatively low neutral pressure, it was found that the EIR is not sufficient to suppress an increase of ion flux to the target plate during the pulse. Several key characteristic time scales involved in this system are also analyzed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 29
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 3781-3793 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Alkali–metal (K and Cs) promotion for sticking of nitrogen oxide molecule (NO) on Si(100) has been studied using a molecular beam method combined with an Auger electron spectroscopy (AES) and a laser ionization spectroscopy [resonance enhanced multiphoton ionization (REMPI)]. The observed sticking probability S shows a good correlation with alkali coverage, indicating that the alkali promotion is local in nature. The decay of S as a function of NO dose as observed with AES shows an anticorrelation with the evolution of the direct-inelastic scattering intensity as obtained with REMPI. This fact is understood as follows: since the direct-inelastic scattering occurs mostly in a single collision process with the surface, local alkali promotion is realized in a single collision of the incident NO molecule with the alkali–metal adsorbates. The decay of S as a function of NO dose is then analyzed with a reaction cross section. The evaluated reaction cross sections are close to the area of the 2×1 unit cell, and thus the estimated reaction radii are almost equal to but somewhat larger than the covalent radius of a K atom, with a increasing trend with alkali coverage. The alkali promotion is explained in terms of local electron charge transfer from the nonionized alkali adatoms to the affinity level of NO molecules based on the adatom density of state around EF.
    Type of Medium: Electronic Resource
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  • 30
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 4 (1992), S. 450-457 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Whether it is induced by an ideal (current driven) instability or by an external force, plasma flow causes a change in the magnetic field configuration and often gives rise to a current intensification locally, thereby a fast driven reconnection being driven there. Many dramatic phenomena in magnetically confined plasmas such as magnetospheric substorms, solar flares, magnetohydrodynamic (MHD) self-organization, and tokamak sawtooth crash, may be attributed to this fast driven reconnection. Using a fourth-order MHD simulation code it is confirmed that compressibility of the plasma plays a crucial role in leading to a fast (MHD time scale) driven reconnection. This indicates that the incompressible representation is not always applicable to the study of a global dynamical behavior of a magnetically confined plasma.
    Type of Medium: Electronic Resource
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