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  • 1
    Electronic Resource
    Electronic Resource
    Superconducting TlSr2(Ca,Cr)Cu2O7 thin films with critical current density up to 106 A/cm2 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4259-4261 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting TlSr2(Ca,Cr)Cu2O7 thin films with zero resistance temperature Tc up to 102 K and critical current density Jc as high as 106 A/cm2 at 77.7 K have been successfully prepared via laser ablation and thallium diffusion. Prolonged low temperature annealing in air was used for film processing. X-ray diffraction patterns indicated that the films were highly oriented 1212 phase with c axes normal to the LaAlO3(100) or MgO(100) substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354440
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  • 2
    Electronic Resource
    Electronic Resource
    Ar+3 photodissociation and its mechanisms (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 4019-4025 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation spectrum of Ar+3 between 520 and 620 nm is reported. A broadband peaking near 520 nm is observed with a cross section of ∼1.8×10−16 cm2 at the peak, in agreement with the findings of Levinger et al. [J. Chem. Phys. 89, 71 (1988)]. However, in the present work, a shoulder whose prominence is highly temperature dependent is observed between 545 and 555 nm. The new results are discussed in terms of various electronic transitions and pathways to dissociation. The photodissociation mechanisms are studied by translational energy analysis of photofragmentation. Three photodissociation mechanisms that involve two electronic energy surfaces are proposed which account for the experimental findings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456832
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  • 3
    Electronic Resource
    Electronic Resource
    Patterning of sp3- and sp2-bonded carbon by atomic-force microscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3619-3621 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the pattering of sp3- and sp2-bonded carbon by using conducting atomic-force microscopy (AFM) working in the noncontact mode. A ta-C film with ∼80% sp3 bonds was scanned by the conducting AFM with a biased tip. A current image that clearly shows gray/white and black features was obtained while scanning in the noncontact mode. These features were proposed to be the result of the different electron emission abilities of the sp3- and sp2-bonded carbon in the film. The result not only enables us to image the distribution of the sp3 and sp2 bonds of a-C, but also extends the AFM to provide the electron emission information of a-C on a nanometer scale. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354654
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  • 4
    Electronic Resource
    Electronic Resource
    Observation of sp3 bonding in tetrahedral amorphous carbon using visible Raman spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2305-2308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible Raman spectroscopy excited at 532 nm was used to characterize the carbon bonding in tetrahedral amorphous carbon (ta-C) films. The vibrational modes of the sp3 bonding in ta-C films were revealed directly. An additional Raman band occurring below 1350 cm−1 was observed. It consisted of two features centered on ∼1270 and ∼1170 cm−1, which were associated with sp3 bond stretching. The observed sp3 related Raman spectrum approached the vibrational density of states of amorphous diamond. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288160
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  • 5
    Electronic Resource
    Electronic Resource
    Electron field emission from tetrahedral amorphous carbon films with multilayer structure (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8098-8102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multilayer structure with alternating metal and semiconductor layers is proposed to occur in tetrahedral amorphous carbon (ta-C) films prepared by using an intermittent layer-by-layer deposition method. In this model, the multilayers can be represented as A/B/A/B/.../A/B/A stacks, in which A is considered to be a semimetallic sp2-rich graphite-like layer with B being a semiconducting sp3-rich diamond-like layer. According to the proposed structural model, the electron field emission properties of the ta-C multilayers that could be modulated by adjusting the total number of layers, layer thickness and sp3 content of each layer have been predicted. Correspondingly, three kinds of ta-C multilayers were designed and deposited to confirm this model by enabling us to measure the electron field emission properties. Agreement between the prediction and the experimental results has been observed. It was found that field emission from ta-C multilayers can be optimized by changing the number of layers, layer thickness and sp3 content of each layer. In our experiments, a threshold electric field (Eth) as low as ∼5 V/μm has been obtained for field emission from ta-C multilayers with a total of 20 layers and with a 10 nm layer thickness. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373504
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  • 6
    Electronic Resource
    Electronic Resource
    Growth of titanium nitride: From clusters to microcrystals (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 231-235 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Time-of-flight mass spectrometry is used to investigate (TiN)n+ clusters produced by a laser-induced plasma reactor source. The mass spectral abundance patterns indicate that the clusters have cubic structures resembling subunits of the fcc lattice of solid TiN. The primary stoichiometries observed are (TiN)n+ (n=1–126), except for TinNn−1+ (n=14, 63). The most stable structures of the clusters are cuboids, in some cases containing a completed terrace. Even at the very early stages of crystal growth, the gas-phase clusters prefer a cubic crystalline atomic arrangement with a highly symmetric structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464669
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  • 7
    Electronic Resource
    Electronic Resource
    Photodissociation of Kr+n clusters (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 3215-3223 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation of Kr+n (3≤n≤11) cluster ions is observed for the first time in the 565 to 630 nm wavelength range. Kr+3 has a photodissociation cross section of (8.1±0.8)×10−17 cm2 at 612 nm, while Kr+4 and Kr+5 are found to have larger photodissociation cross sections than Kr+3 with a slightly red-shifted spectrum. Only Kr+ is detected as a photofragment of Kr+3, while in the Kr+n (4≤n≤7) experiments, both Kr+2 and Kr+ photofragments are seen. As size n increases from 7 to 11, Kr+ disappears and Kr+3 appears. Laser power studies show that all are single photon photodissociation processes. For higher order Kr+n clusters (4≤n≤7) the intensity ratio between the two photodissociation products Kr+2 and Kr+ is dependent on the wavelength of the laser light used in the photodissociation, but independent of the polarization direction of the laser. Translational energy analysis of the photofragments is used to investigate the photodissociation mechanisms. In contrast to the photodissociation of Kr+3, where two types of Kr+ photofragments with different values of translational energy release are observed, only one type of Kr+2 photofragment, with zero kinetic energy release is found in the Kr+4 photodissociation. These findings are discussed in terms of the dynamics of photodissociation and possible structures of these cluster ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458854
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  • 8
    Electronic Resource
    Electronic Resource
    Structural and bonding properties of carbon nitride films synthesized by low energy nitrogen-ion-beam-assisted pulsed laser deposition with different laser fluences (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1634-1640 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride films were deposited by pulsed Nd:yttrium–aluminum–garnet laser ablation of graphite with assistance of low energy nitrogen-ion-beam bombardment. The nitrogen to carbon (N/C) atomic ratio, surface morphology, bonding state, and microstructure of the deposited carbon nitride films were characterized by x-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy, atomic force microscopy (AFM), and x-ray diffraction. The influence of laser fluence on the synthesis of carbon nitride films was investigated. The N/C atomic ratio of the carbon nitride films can reach the maximum at the highest laser fluence. XPS and FTIR analyses indicated that the bonding state between the carbon and nitrogen in the deposited films was significantly influenced by the laser fluence during deposition. The carbon–nitrogen bonding of C–N and C=N were observed in the films. In addition, α and β C3N4 phases were found to coexist in the carbon nitride films with relative low degree of ordering in the crystal lattice. AFM results indicated that the laser fluence also had a critical effect on the surface structure of the carbon nitride films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334643
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of temperature on carbon nitride films synthesized by ion-beam-assisted pulsed laser deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7060-7066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride thin films were deposited by pulsed laser deposition with nitrogen ion beam assistance at a substrate temperature varying from room temperature to 800 °C. The effect of the substrate temperature on the nitrogen content, surface morphology, structure, and electrical property of the carbon nitride films was investigated. The deposited films were characterized by atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and four-probe resistance. The nitrogen content of the deposited films reached its maximum value of 25% at a substrate temperature of 400 °C. AFM images revealed that an island structure occurred and developed on the surface of the films deposited at the high substrate temperature. FTIR and XPS spectra showed the existence of sp3C–N and sp2C(Double Bond)N bonds in the deposited films. The deposited carbon nitride films had an amorphous structure with two carbon nitride phases inclusions, which had a stoichiometry near C3N4 and a variable stoichiometry from C5N to C2N, respectively. With the increase in substrate temperature, the relative content of the sp3C–N bonds, i.e., the C3N4 phase, increased and the crystallization degree of the deposited films enhanced, which were confirmed by the Raman analysis. Very few C(Triple Bond)N bonds in the films were found as compared to other carbon–nitrogen bonds. Electrical resistivity exhibited the highest value for the film deposited at 400 °C. Investigation results indicated that the high substrate temperature could promote the formation of C3N4 phase. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326474
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  • 10
    Electronic Resource
    Electronic Resource
    Optical constants of tetrahedral amorphous carbon films in the infrared region and at a wavelength of 633 nm (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4268-4273 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical constants of tetrahedral amorphous carbon (ta-C) films in the infrared region and at a wavelength of 633 nm were investigated. The ta-C films were prepared by the filtered arc deposition technique under different carbon ion energies of 22–320 eV. The ta-C films contained high sp3 bonding of 82%–93% and had very smooth surfaces. The optical band gap was found to be controlled essentially by the presence and arrangement of the sp2 sites in the ta-C films. The real and imaginary parts, ε1 and ε2, of the dielectric constant, refractive index, n, and extinction coefficient, k, of ta-C films were determined from measurements of infrared reflection and spectroscopic ellipsometry. The results indicated that in our region of investigation ta-C films exhibited a fine transparency at a wavelength of 633 nm, especially in the infrared region. Both n and k, and consequently, ε1 and ε2, showed considerable variation in ion energy, and had minimum values approaching those of diamond for film prepared at an ion energy around 220 eV. The dependence of the optical constants on the sp3 content of ta-C films indicated that with increased sp3 content, ta-C film possessed a dielectric constant, refractive index and extinction coefficient much closer to that of diamond. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373064
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