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  • 1
    Electronic Resource
    Electronic Resource
    Nitrogen-doped ZnSe with selenium-rich growth by low-pressure organometallic chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7821-7824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-quality nitrogen-doped p-type ZnSe epilayer on (100) GaAs substrate was obtained under selenium-rich growth conditions by low-pressure organometallic chemical vapor deposition. Ammonia was used as the dopant source. The resistivity (0.5 Ω cm) and the free-carrier concentration (p=8.8×1017 cm−3) of as-grown ZnSe:N were derived from Hall measurements. With selenium-rich growth conditions, we can reduce the concentration of compensation defects (VSe-Zn-NSe which acts as a donor in ZnSe). Nitrogen is found to incorporate in ZnSe as a shallow level, which is examined by the dependence of free-to-acceptor emission on the NH3/H2Se molar ratio. The carrier concentration of as-grown ZnSe:N seems to change insignificantly within a wide range of growth temperatures. That is thought to be useful for device fabrication due to uniformity considerations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357029
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  • 2
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of ZnSe on (111) Si by low-pressure metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4241-4243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epitaxial layers were successfully grown on (111) Si substrates by low-pressure metalorganic chemical vapor deposition. It is not necessary that the reactant inlet tubes project to near the substrates. From x-ray and scanning electron microscopy examinations, single-crystalline ZnSe epilayers with mirrorlike surfaces can be obtained. The carrier concentration profile shows that the carrier distribution in the epilayer is very uniform. The electron mobility of the epilayer at room temperature is 280 cm2 /V s. The efficient 77-K photoluminescence indicates that the ZnSe epilayers are of good quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341292
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  • 3
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of InP on GaAs by low-pressure metalorganic chemical vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3209-3211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of InP on GaAs by low-pressure metalorganic chemical vapor deposition is reported. Trimethylindium-trimethylphosphine adduct was used as the indium source and PH3 as the phosphorus source. From x-ray and scanning electron microscopy examination, excellent crystallinity InP epilayers with specular surface morphology can be grown on (100) GaAs substrates. The composition of this heterostructure was identified by the Auger depth profiles. The electron mobility of the undoped InP epilayer can reach 4700 cm2/V s at room temperature. An evident effect of growth temperature on electron mobility is also demonstrated. Carrier concentration profile shows that the carrier distribution in the epilayer is very uniform. The efficient photoluminescence compared with that of InP homoepitaxy shows that high-quality InP/GaAs heteroepitaxial layers can be obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339321
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  • 4
    Electronic Resource
    Electronic Resource
    Material properties of InP-on-Si grown by low-pressure organometallic vapor-phase epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1213-1216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped InP epilayers have been grown directly on (100) Si substrates by low-pressure organometallic vapor-phase epitaxy. The surface morphology, x-ray diffraction peak width, and ion backscattering yield each improve substantially with InP thickness (0.1–3 μm). X-ray and photoluminescence (PL) measurements demonstrate that the InP heteroepilayers are under biaxial tensile strain in the surface parallel direction. The carrier concentration profile shows that the carrier distribution in the InP layer is very uniform, while an apparent reduction in concentration occurs at the InP/n-type Si interface. The 77-K PL spectrum reveals a strong near-band-edge emission with a full width at half maximum of 14 meV. Post-growth thermal annealing at 780 °C was confirmed to be effective in improving the overall quality of InP-on-Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343011
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  • 5
    Electronic Resource
    Electronic Resource
    Tin-doped GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and tetraethyltin (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2831-2834 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A vertical cold-wall low-pressure metalorganic chemical vapor deposition system is used for the growth of Sn-doped n-type GaAs epilayers. Smooth and specular Sn-doped GaAs epilayers can be easily grown. Van der Pauw Hall measurement, and I-V and C-V characteristics show that tetraethyltin is a suitable source for GaAs n-type dopant. Sn surface accumulation has been observed from Auger electron specroscopy (AES) and secondary ion mass spectrometry (SIMS) measurements. From infrared spectroscopy (IR) examination of the deposit on the quartz reactor wall, the decomposition of TEG is incomplete. The results of selective epitaxial growth indicate that the GaAs growth from TEG is controlled by surface kinetics. Tetraethyltin can enhance the growth rate of GaAs and decrease the As/Ga ratio and also EL2 concentration. A EL2 model is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337066
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  • 6
    Electronic Resource
    Electronic Resource
    Disorder/order/disorder Ga0.5In0.5P visible light-emitting diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5420-5422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new Ga0.5In0.5P light-emitting diode (LED) with order/disorder/order (DOD) structure has been fabricated by metalorganic chemical vapor deposition. Growth temperature and dopant concentration were successfully used as growth parameters to obtain a heterojunction-equivalent structure. From the 77 K photoluminescence measurement, three peak energies of the DOD structure can be resolved clearly. It is shown that the DOD structure is equivalent to the double-heterojunction structure. The wavelength of the LED occurring at 667 nm coincides with the ordered active layer emission. The light intensity of the DOD LED is seven times stronger as compared with that of the homojunction disordering LED at the injection current of 10 mA. These results demonstrate that the DOD structure can provide good electrical and optical confinements and can be served as heterojunction-equivalent applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351982
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  • 7
    Electronic Resource
    Electronic Resource
    Indium phosphide on silicon heteroepitaxy: Lattice deformation and strain relaxation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3338-3342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice deformation and strain relaxation in epitaxial InP directly on (001) Si are studied as a function of layer thickness using x-ray diffraction and photoluminescence (PL) techniques. The heteroepilayers were grown by low-pressure organometallic vapor-phase epitaxy and showed good quality. We find that mismatch-induced compressive strains are still present in InP layers with a thickness less than 1 μm. The rate of strain release is much lower than the prediction based on the equilibrium theory. With increasing thickness above 1.1 μm, the InP/Si layers suffer in-plane tensile strains as a result of differential thermal contraction during the cooling process after growth. Fairly good agreement is found between the PL and x-ray data for the strain variations in the InP/Si heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346386
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  • 8
    Electronic Resource
    Electronic Resource
    Ordering effect on the performance of Ga0.5In0.5P visible light-emitting diodes grown by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1513-1516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering effect on the performance of Ga0.5In0.5P visible light-emitting diodes (LEDs) has been reported. The GaInP LEDs were fabricated on GaAs substrates at 675 and 730 °C by metalorganic chemical vapor deposition, with ordered and disordered structures. A sample with an ordered structure shows anomalous device performance, where emitting wavelength change, low light intensity, and early saturation were observed from the current-light intensity relationship. From the current-voltage measurement, it was found that the sample with ordered structure also yields an inferior diode performance. These phenomena could be due to the existence of antiphase boundaries in the ordered structures. The antiphase boundaries can act as generation-recombination centers and result in the anomalous behavior of the ordered GaInP LED.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351220
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  • 9
    Electronic Resource
    Electronic Resource
    Characteristics of Ga0.51In0.49P/GaAs heterostructures grown on Si substrates by organometallic epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 753-756 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated the feasibility of heteroepitaxial growth of Ga0.51In0.49P/GaAs layers on Si substrates by low-pressure organometallic vapor phase deposition. The growth parameters of the GaAs buffer layer were confirmed to be the controlling factors in obtaining higher quality Ga0.51In0.49P on Si. Under the optimum growth conditions, specular single-crystal Ga0.51In0.49P layers can be reproducibly obtained. The room-temperature electron mobility of the undoped Ga0.51In0.49P epilayer can reach 1000 cm2 /V s with a carrier concentration of 2×1016 cm−3. The efficient photoluminescence indicates that the Ga0.51In0.49P grown layer is of high optical quality. In addition, the GaAs intermediate layer is also effective in reducing the residual tensile stress in the Ga0.51In0.49P film on Si. The results presented can compete with those reported previously for the OMVPE-grown GaxIn1−xP on GaAs substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345755
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of the ZnSe heteroepilayer on a GaAs/Si substrate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3898-3900 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe is a semiconductor with a direct band gap of 2.68 eV at room temperature, which makes it one of the most important materials for blue electroluminescent devices and short wavelength laser diodes. In this communication, heteroepitaxial growth of ZnSe on a GaAs/Si substrate by low-pressure organometallic chemical vapor deposition is reported. The ZnSe/GaAs/Si epilayer exhibits a uniform surface morphology. Strong photoluminescence near-band-edge emission was observed. The thickness of the GaAs buffer layer seems to be an important factor in the energy shift of the photoluminescence peak.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344996
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