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  • 1
    Electronic Resource
    Electronic Resource
    Structural and optical characterization of ZnSe single crystals grown by solid-phase recrystallization (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2983-2989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate by high-resolution x-ray diffraction (HRXRD), temperature-dependent photoluminescence (PL) and reflectivity spectroscopies, and low-temperature selective-photoluminescence spectroscopy ZnSe single crystals grown by solid-phase recrystallization. HRXRD reveals the high structural perfection of the samples which exhibit rocking-curve linewidths in the 15–20 arcsec range. The low-temperature PL spectra are dominated by the so-called Ideep1 excitonic line, a neutral-acceptor bound-exciton line I1, the free-exciton emission FX, and the n=2 excited state of FX. We identify the main residual impurities to be Li acceptors. Donor–acceptor pair bands are very hardly detected at low temperature which indicates a low donor content. A major characteristics of these samples is the quasi-absence of any Cu-related deep emission which generally plagues the PL spectra of bulk ZnSe. Consequently, Ideep1 is ascribed to Zn-vacancy–donor complexes. Finally, from the temperature dependence of the PL emission and reflectivity, the band-gap energy of bulk ZnSe is found to linearly shrink with the temperature above 80 K at a rate of −4.3×10−4 eV K−1. The room-temperature gap is estimated to 2720±2 meV. Our results indicate that solid-phase recrystallization produces ZnSe samples with the highest structural quality and purity achievable at present time. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363155
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  • 2
    Electronic Resource
    Electronic Resource
    Evidence of isovalent impurities in GaAs grown by molecular-beam epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2996-2998 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-pressure, low-temperature photoluminescence spectra of Si-doped GaAs grown by molecular-beam epitaxy show well-defined features corresponding to nitrogen-bound exciton recombination, together with other isoelectronic center-bound excitonlike lines. Though N, when isolated, only influence weakly the GaAs electronic properties, we briefly discuss the consequences of its association with other impurities. It is suggested that complexes involving isovalent impurities may be responsible for part of the defect bound exciton luminescence, observed by several authors in molecular-beam-epitaxy–grown GaAs. The source of isovalent impurities is tentatively attributed to the high-temperature boron nitride crucibles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336919
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  • 3
    Electronic Resource
    Electronic Resource
    Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 183-187 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN epilayers and GaN/AlGaN quantum wells (QWs) were grown by molecular beam epitaxy on GaN(0001) single crystal substrates. Transmission electron microscopy (TEM) was used to assess the crystal quality of the homoepitaxial layers. A dislocation density of less than 105 cm−2 is deduced from TEM imaging. Low temperature (1.8 K) photoluminescence (PL) of homoepitaxial GaN reveals PL linewidths as low as 0.3 meV for bound excitons. The PL integrated intensity variation between 10 and 300 K is compared to that observed on a typical heteroepitaxial GaN/Al2O3 layer. A 2 nm thick GaN/Al0.1Ga0.9N QW has been studied by time-resolved and continuous wave PL. The decay time is close to a purely radiative decay, as expected for a low defect density. Finally, the built-in polarization field measured in a homoepitaxial QW is shown to be comparable to that measured on heteroepitaxial QWs grown either on sapphire or silicon substrates. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373640
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  • 4
    Electronic Resource
    Electronic Resource
    Chlorine-related neutral complex in screen-printed CdTe (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3386-3389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed low-temperature optical characterization of screen-printed CdTe is presented. Photoluminescence and excitation spectroscopy demonstrate the existence of a new defect center systematically found in all the deposited layers. A possible explanation is based on a local mode induced by the defect but the experimental data are also very similar to those presented by Monemar et al. [Phys. Rev. B 25, 7719 (1982)] for two complexes in GaP:Cu. including the characteristic orange luminescence (COL) center, and for an Ag-related complex in ZnTe:Ag. The growth process as well as the optical results lead to an identification of the defect with an isoelectronic complex involving Cl ([VCd 2ClTe]).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346342
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  • 5
    Electronic Resource
    Electronic Resource
    Strained GaAs layers grown on GaAs substrates with an intermediate GaAs1−xPx buffer layer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 198-203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of growing strained GaAs layers on GaAs (100) substrates using a nonpseudomorphic GaAs1−xPx buffer layers is examined. It is demonstrated that by varying the phosphorus content in a thick buffer (significantly thicker than the critical thickness for strain relaxation), uniform biaxial stress magnitude can be monitored in GaAs, e.g., 8 kbar biaxial compression can be achieved by a P composition of 0.16 in the alloy. After an x-ray diffraction study of strain relaxation in the buffers, low temperature photoluminescence measurements are used to evaluate the effect of such a stress upon monitoring the near band gap properties of GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350308
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  • 6
    Electronic Resource
    Electronic Resource
    Improvement of the carrier confinement by double-barrier GaAs/AlAs/(Al,Ga)As quantum well structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2111-2113 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The insertion of few AlAs monolayers at the interfaces between a GaAs quantum well and (Al,Ga)As barriers gives rise to a new type of structure which is well described as a double-barrier quantum well. It is shown that only one or two AlAs monolayers are sufficient to significantly increase the confinement energies. Our results are discussed in the light of low-temperature photoluminescence experiments and are well described in the framework of numerical calculations based on the envelope function formalism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104976
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  • 7
    Electronic Resource
    Electronic Resource
    Optical spectroscopy at cryogenic temperatures using a Block–Piermarini diamond-anvil cell (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 772-775 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple experimental setup allowing low-temperature high-pressure spectroscopy, with in situ pressure adjustment, is described. A Block–Piermarini diamond-anvil cell is used together with standard laboratory materials. Results of semiconductor photoluminescence studies, using argon as a pressure-transmitting medium, are given as an illustration and are also used for the study of the pressure conditions. Pressure homogeneity is better than 100 MPa up to 6 GPa, and the residual uniaxial component of the stress can be lower than 100 MPa.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139826
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  • 8
    Electronic Resource
    Electronic Resource
    Smooth, pseudosmooth, and rough GaAs/AlxGa1−xAs interfaces: Effect of substrate misorientation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2605-2607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlxGa1−xAs quantum well and superlattice structures have been grown at 600 °C by molecular beam epitaxy on GaAs (001) substrates exactly oriented or slightly misoriented towards (111) Ga and (111) As. It is shown that for the growth conditions used, the step orientation (nature) has a striking influence on the photoluminescence (PL) features of the grown structures: steps along [1¯10] (Ga-type steps) lead to sharp PL lines (pseudosmooth interfaces), while a considerable broadening of the PL (rough interfaces) is obtained when the steps are along [110] (As-type steps).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101967
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  • 9
    Electronic Resource
    Electronic Resource
    Reduced carbon acceptor incorporation in GaAs grown by molecular beam epitaxy using dimer arsenic (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1596-1598 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doubly doped (C,Be) GaAs layers grown by molecular beam epitaxy under dimer or tetramer arsenic flux are studied by selectively excited photoluminescence. Acceptor spectroscopy gives the first experimental evidence of the decrease of carbon shallow acceptor concentration when using dimer rather than tetramer arsenic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99092
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  • 10
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of GaAs on Si: The effect of in situ thermal annealing under AsH3 (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1976-1978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter shows that an in situ thermal annealing step in AsH3/H2 during the metalorganic vapor phase epitaxy of GaAs on Si(001) improves the crystalline quality. The dislocation density is reduced (below 107 cm−2) without affecting the Si diffusion across the heterointerface or the strain level in the epilayer. The nature of the various near-band-gap recombinations present in the unannealed and annealed samples is discussed in light of selective photoluminescence experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99595
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