ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Semiconductor heterostructures with vertical optical cavities with active regions, based on arrays of InAs quantum dots inserted in an external InGaAs quantum well, have been obtained by molecular-beam epitaxy on GaAs substrates. The dependences of the reflection and photoluminescence spectra on the structural characteristics of the active region and optical cavities have been investigated. The proposed heterostructures are potentially suitable for optoelectronic devices at wavelengths near 1.3 µm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187733
Permalink