ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The authors of this paper discuss their studies of the influence of background arsenic pressure on the properties of autoepitaxial layers of silicon grown on Si (100) surfaces by molecular-beam epitaxy. In these investigations the following experimental techniques were used: reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187863
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