ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The formation of InAs quantum dots grown by submonolayer migration-enhanced molecular-beam epitaxy on GaAs(100) surfaces with various misorientation angles and directions is investigated. It is shown for the deposition of 2 monolayers (ML) of InAs that increasing the misorientation angle above 3° along the [010], $$[0\overline {11} ]$$ , and [011] directions leads to the formation of several groups of quantum dots differing in geometric dimensions and electronic structure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187363