Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 1174-1176
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A model of the ordering mechanism in SiGe films is developed to explain the occurrence of two types of ordered structures. We investigate the stability of ordered structures by strain energy calculation. It is suggested that atomic diffusion, which is enhanced by strain in a film, influences the formation of ordered structures. The process of atomic exchange that forms the ordered structure at a reconstructed surface during growth is also discussed. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119617
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