Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 204-208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion process of InGaAs/InP superlattice structures by thermal annealing of 700–850 °C is studied by Raman spectroscopy. Peak intensities and peak energies of InAs-, GaAs-, and InP-like longitudinal optical (LO) phonon modes change with thermal annealing temperature and time. Depth profiles of the group III and group V atoms are estimated quantitatively by measuring the variations of the peak energies of the LO phonon modes and the ratios of the mode intensities. The energy shift of the GaAs-like LO peak showing a small broadening, the existence of nonenergy shift InP LO phonon peak and the emerging of InP-like LO peak in the lower energy region indicate that the interdiffused superlattice consists of uniform compositional InGaAsP well and InP barrier layers and sharp interfaces. It is found that the resulting InGaAsP quaternary alloy is roughly lattice-matched to InP (〈±0.5%). It is also found that the diffusion coefficient in the well region is larger than that in the barrier region, and that the interdiffusion coefficient D0 and activation energy Ea are 8.56×1010 cm2/s and 5.82 eV, respectively. The interdiffusion in this superlattice is determined by the diffusion in the InP region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350310
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1407-1409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short period GaP/AlP superlattices are grown on GaP and GaAs substrates at 600 °C by gas source molecular beam epitaxy with growth interruption. Alternating monolayer growth of GaP and AlP is confirmed by the observation of the reflection high-energy electron diffraction intensity oscillations during growth. The formation of short period superlattice structures and the zone-folded LO phonons are observed in the x-ray diffraction rocking curves and Raman spectra, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105207
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Zn-diffusion-induced intermixing of InGaAs/InP multiple quantum well structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1383-1385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intermixing process of InGaAs/InP multiple quantum well structures by Zn diffusion at 550 °C is investigated. Secondary ion mass spectroscopy and x-ray analysis reveal that Zn diffusion induces the intermixing of group III atoms, but has little effect on group V profiles. However, resulting group III atom profiles are not completely uniform even after Zn diffusion. These results suggest that large lattice mismatch suppresses the intermixing process by Zn diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99123
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Intermixing of InGaAs/InP multiple quantum well structures by Ga implantation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 520-522 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of Ga implantation and thermal annealing on InGaAs/InP multiple quantum well structures is investigated by photoluminescence (PL) and sputtering Auger electron spectroscopy. It is found that the interdiffusion of both column III and column V atoms occurs at the interfaces between InP barrier and InGaAs well layers, but the degree of intermixing near the sample surface is small. The variations of PL peak energy shift with annealing and dose suggest that the PL peak shift is attributed to a combination of intermixing and stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100918
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Raman scattering in InGaAlP layers grown by molecular-beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 5007-5011 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering from InGaAlP layers on (100) GaAs substrates grown by molecular-beam epitaxy (MBE) is studied. Compositional dependencies of Raman shifts show two-mode behavior for InAlP and partial three-mode behavior for InGaAlP. The empirical expressions for the compositional variations of LO and TO phonon frequencies are presented. Enhancement of the Raman peak intensities for AlP- and InP-like LO phonons is observed for the composition range when the direct band-gap E0 is close to the photon energy of the excitation light source. The ratio of valley depth to InP-like LO phonon peak height in the Raman spectrum of InGaP ranges from about 0.5 to 0.43, and correlates with the room-temperature photoluminescence peak energy (1.9–1.88 eV). The relationship between these is the same as for the metalorganic vapor-phase epitaxy (MOVPE) samples, although the depth-to-peak height ratios for the MBE samples coincide with the higher side values. The growth temperature dependence is also observed. These results indicate that the InGaP layers grown under the appropriate MBE-growth conditions show the ordered state, although the degree of the order is low. The InAlP layers show Raman spectra having well-resolved InP-like LO and TO phonon peaks. This differs from most of the reported results for MOVPE-grown InAlP layers, and suggests that the MBE-grown InAlP layers are very close to the disordered state alloy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343173
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1713-1719 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm2, respectively. This result is achieved by the introduction of H2 into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ΔEc is estimated to be 0.43 of the band-gap difference ΔEg. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 °C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is achieved for the first time. The lasing wavelength is 658 nm with a threshold current density of 7.6 kA/cm2. cw operation is also achieved in the MQW laser diodes at −125 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338067
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Metalorganic–vapor-phase-epitaxial growth of Mg-doped Ga1−xAlxAs layers and their properties (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1156-1159 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnesium-doped Ga1−xAlxAs layers are grown by metalorganic vapor-phase epitaxy (MOVPE) on (100)-GaAs substrates using bis-cyclopentadienyl magnesium (Cp2Mg) as the organometallic precursor to Mg. Room-temperature hole concentrations in the range of 1×1017–1×1019 cm−3 are achieved with high controllability. The electrical properties are comparable to those for Zn-doped GaAlAs layers. The Mg acceptor energy Ea increases from 25 meV for an Al composition of x=0 to 42 meV for x=0.7. The x dependence of Ea is smaller than that for Zn. Photoluminescence intensities for GaAs and Ga0.7Al0.3As layers are comparable and increased linearly with hole concentration up to the middle of 1018 cm−3. The Mg diffusion coefficients in GaAs and Ga0.7Al0.3As layers are also similar, and are much smaller than the diffusion coefficient for Zn. These results indicate that Mg is a useful p-type dopant in the MOVPE growth of GaAlAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337032
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Refractive indices of In0.49Ga0.51−xAlxP lattice matched to GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 985-986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The refractive indices of In0.49Ga0.51P, In0.49Al0.51P, and In0.49Ga0.29Al0.22P, lattice matched to GaAs grown by molecular-beam epitaxy, are determined from double-beam reflectance measurements for photon energies ranging from 0.6 to 1.3 eV. Variation of the In0.49Ga0.51−xAlxP, refractive index with Al composition x and photon energy is calculated according to the single-effective-oscillator model. These analytical results are then compared with experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336581
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Improvements of electrical and optical properties of InAlAs grown by molecular beam epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3262-3264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Great improvement in the electrical and optical properties of molecular-beam-epitaxy-grown InAlAs was obtained by using InP buffer layers and high substrate temperatures of 555 °C. Undoped InAlAs layers are n type and the highest room temperature electron mobility is as high as 5100 cm2/V s with a carrier concentration of 1×1015 cm−3. The room-temperature photoluminescence spectrum has a sharp edge emission with a spectral half-width as narrow as 42 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335785
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence lifetime of GaP/AlP superlattices grown by gas-source molecular-beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2430-2432 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence lifetimes of GaP/AlP short-period superlattices (GaP)11/(AlP)3 and (GaP)9/(AlP)5, grown on GaP(001) by gas-source molecular-beam epitaxy are studied by a time-correlated single photon counting method at 4.2 and 298 K. Two components of the photoluminescence lifetime are found for each sample. The fast component is about 2 ns accompanied by a slow component of about 20 ns. Discussion of the possible explanations of the two components includes the co-existence of direct- and indirect-band-gap transitions in the superlattice, which was fabricated from the indirect-band-gap constituents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111590
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...